HT9170 DTMF Receiver: Features
HT9170 DTMF Receiver: Features
HT9170 DTMF Receiver: Features
DTMF Receiver
Features
· Operating voltage: 2.5V~5.5V · Tristate data output for mC interface
· Minimal external components · 3.58MHz crystal or ceramic resonator
· No external filter is required · 1633Hz can be inhibited by the INH pin
· Low standby current (on power down mode) · HT9170B: 18-pin DIP package
· Excellent performance HT9170D: 18-pin SOP package
General Description
The HT9170 series are Dual Tone Multi Fre- DTMF tone pairs into a 4-bit code output.
quency (DTMF) receivers integrated with digi- Highly accurate switched capacitor filters are
tal decoder and bandsplit filter functions. The employed to divide tone (DTMF) signals into
H T 9 1 7 0 B a nd H T 9 1 7 0 D t y p es s u p p l y low and high group signals. A built-in dial tone
power-down mode and inhibit mode operations. rejection circuit is provided to eliminate the
All types of the HT9170 series use digital count- need for pre-filtering.
ing techniques to detect and decode all the 16
Selection Table
Function Operating OSC Tristate Power 1633Hz
DV DVB Package
Part No. Voltage Frequency Data Output Down Inhibit
Block Diagram
P W D N V R E F R T /G T E S T D V D V B
X 2
3 .5 8 M H z
C ry s ta l B ia s V re f
X 1 S te e r in g C o n tr o l C ir c u it
O s c illa to r C ir c u it G e n e ra to r
L o w G ro u p D 0
F ilte r L a tc h
V P F re q u e n c y C o d e & D 1
O P A P r e - F ilte r O u tp u t
D e te c to r D e te c to r D 2
V N B u ffe r
H ig h G r o u p
F ilte r D 3
G S
IN H O E
Pin Assignment
V P 1 1 8 V D D V P 1 1 8 V D D
V N 2 1 7 R T /G T V N 2 1 7 R T /G T
G S 3 1 6 E S T G S 3 1 6 E S T
V R E F 4 1 5 D V V R E F 4 1 5 D V
IN H 5 1 4 D 3 IN H 5 1 4 D 3
P W D N 6 1 3 D 2 P W D N 6 1 3 D 2
X 1 7 1 2 D 1 X 1 7 1 2 D 1
X 2 8 1 1 D 0 X 2 8 1 1 D 0
V S S 9 1 0 O E V S S 9 1 0 O E
H T 9 1 7 0 B H T 9 1 7 0 D
1 8 D IP 1 8 S O P
Pin Description
Internal
Pin Name I/O Description
Connection
OPERATIONAL
VP I Operational amplifier non-inverting input
AMPLIFIER
VN I Operational amplifier inverting input
GS O Operational amplifier output terminal
VREF O VREF Reference voltage output, normally VDD/2
X1 I The system oscillator consists of an inverter, a bias resistor
and the necessary load capacitor on chip.
OSCILLATOR
X2 O A standard 3.579545MHz crystal connected to X1 and X2 ter-
minals implements the oscillator function.
Active high. This enables the device to go into power down
CMOS IN
PWDN I mode and inhibits the oscillator. This pin input is internally
Pull-low
pulled down.
Logic high. This inhibits the detection of tones representing
CMOS IN
INH I characters A, B, C and D. This pin input is internally pulled
Pull-low
down.
VSS ¾ ¾ Negative power supply
CMOS IN
OE I D0~D3 output enable, high active
Pull-high
Receiving data output terminals
CMOS OUT
D0~D3 O OE=²H²: Output enable
Tristate
OE=²L²: High impedance
Data valid output
DV O CMOS OUT When the chip receives a valid tone (DTMF) signal, the DV
goes high; otherwise it remains low.
EST O CMOS OUT Early steering output (see Functional Description)
Tone acquisition time and release time can be set through
RT/GT I/O CMOS IN/OUT
connection with external resistor and capacitor.
VDD ¾ ¾ Positive power supply, 2.5V~5.5V for normal operation
One-shot type data valid output, normal high, when the chip
DVB O CMOS OUT receives a valid time (DTMF) signal, the DVB goes low for
10ms.
O P E R A T IO N A L V R E F O S C IL L A T O R C M O S IN C M O S O U T
A M P L IF IE R P u ll- h ig h T r is ta te
X 1 X 2
V N V - O P A E N
O P A G S
V P V +
1 0 M
2 0 p F 1 0 p F
C M O S O U T C M O S IN /O U T C M O S IN
P u ll- lo w
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maxi-
mum Ratings² may cause substantial damage to the device. Functional operation of this device
at other conditions beyond those listed in the specification is not implied and prolonged expo-
sure to extreme conditions may affect device reliability.
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VDD Conditions
VDD Operating Voltage ¾ ¾ 2.5 5 5.5 V
IDD Operating Current 5V ¾ ¾ 3.0 7 mA
ISTB Standby Current 5V PWDN=5V ¾ 10 25 mA
VIL ²Low² Input Voltage 5V ¾ ¾ ¾ 1.0 V
VIH ²High² Input Voltage 5V ¾ 4.0 ¾ ¾ V
IIL ²Low² Input Current 5V VVP=VVN=0V ¾ ¾ 0.1 mA
IIH ²High² Input Current 5V VVP=VVN=5V ¾ ¾ 0.1 mA
ROE Pull-high Resistance (OE) 5V VOE=0V 60 100 150 kW
RIN Input Impedance (VN, VP) 5V ¾ ¾ 10 ¾ MW
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VDD Conditions
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VDD Conditions
DTMF Signal
3V -36 ¾ -6
Input Signal Level dBm
5V -29 ¾ 1
Twist Accept Limit (Positive) 5V ¾ 10 ¾ dB
Twist Accept Limit (Negative) 5V ¾ 10 ¾ dB
Dial Tone Tolerance 5V ¾ 18 ¾ dB
Noise Tolerance 5V ¾ -12 ¾ dB
Third Tone Tolerance 5V ¾ -16 ¾ dB
Frequency Deviation
5V ¾ ¾ ±1.5 %
Acceptance
Frequency Deviation Rejection 5V ±3.5 ¾ ¾ %
Power Up Time (tPU)
5V ¾ 30 ¾ ms
(See Figure 4.)
Gain Setting Amplifier
RIN Input Resistance 5V ¾ ¾ 10 ¾ MW
IIN Input Leakage Current 5V VSS<(VVP,VVN)<VDD ¾ 0.1 ¾ mA
VOS Offset Voltage 5V ¾ ¾ ±25 ¾ mV
PSRR Power Supply Rejection 5V ¾ 60 ¾ dB
100 Hz
CMRR Common Mode Rejection 5V ¾ 60 ¾ dB
-3V<VIN<3V
AVO Open Loop Gain 5V ¾ 65 ¾ dB
fT Gain Band Width 5V ¾ ¾ 1.5 ¾ MHz
VOUT Output Voltage Swing 5V RL>100kW ¾ 4.5 ¾ VPP
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VDD Conditions
RL Load Resistance (GS) 5V ¾ ¾ 50 ¾ kW
CL Load Capacitance (GS) 5V ¾ ¾ 100 ¾ pF
VCM Common Mode Range 5V No load ¾ 3.0 ¾ VPP
Steering Control
tDP Tone Present Detection Time 5 16 22 ms
tDA Tone Absent Detection Time ¾ 4 8.5 ms
tACC Acceptable Tone Duration ¾ ¾ 42 ms
tREJ Rejected Tone Duration 20 ¾ ¾ ms
tIA Acceptable Inter-digit Pause ¾ ¾ 42 ms
tIR Rejected Inter-digit Pause 20 ¾ ¾ ms
Note: DO=D0~D3
V D D
0 .1 m F
1 V D D 1 8
T o n e 1 0 0 k W V P
2 R T /G T 1 7
V N
0 .1 m F 3 E S T 1 6
G S
1 0 0 k W 4 D V 1 5 3 0 0 k W
V R E F
5 D 3 1 4
(IN H )
3 .5 7 9 5 4 5 M H z 6 D 2 1 3
(P W D N )
7 D 1 1 2
X 1
8 D 0 1 1
X 2
9 O E 1 0
2 0 p F 2 0 p F V S S
V S S H T 9 1 7 0 /B /D
Functional Description
Timing Diagrams
tR E J t IR
t IA
T o n e T o n e n T o n e n + 1
tD P tD P tD A tD P
E S T
tA C C
V T R T
R T /G T
tG T P
tP D O tG T A
D 0 ~ D 3 T o n e C o d e n 1 T o n e C o d e n T o n e C o d e n + 1
tD O V
tP D V
tP D V
D V
tD D O tE D O
O E
T o n e T o n e
P W D N
E S T
tP U
V D D V D D
V D D V D D
H T 9 1 7 0 H T 9 1 7 0
C S e r ie s C
S e r ie s
R T /G T R T /G T
R R 1
E S T E S T
D 1 R 2
(a) Fundamental circuit:
tGTP = R ´ C ´ Ln (VDD / (VDD - VTRT)) (c) tGTP > tGTA :
tGTA = R ´ C ´ Ln (VDD / VTRT) tGTP = R1 ´ C ´ Ln (VDD / (VDD - VTRT))
tGTA = (R1 // R2) ´ C ´ Ln (VDD / VTRT)
V D D
V D D
H T 9 1 7 0
S e r ie s C
R T /G T
R 1
E S T
D 1 R 2
R O W 2 4 5 6 B
R O W 3 7 8 9 C
R O W 4 * 0 # D
Z: High impedance
Data output
The data outputs (D0~D3) are tristate outputs. When OE input becomes low, the data outputs
(D0~D3) are high impedance.
Application Circuits
V D D
0 .1 m F
1 V D D 1 8
1 0 0 k W V P
D T M F 2 R T /G T 1 7
V N
0 .1 m F 3 E S T 1 6
G S
1 0 0 k W 4 1 5 3 0 0 k W
V R E F D V
5 D 3 1 4
IN H
T o o th e r d e v ic e 6 D 2 1 3
P W D N
7 1 2 T o o th e r d e v ic e
X 1 D 1
X 'T A L 8 D 0 1 1
X 2
9 O E 1 0
V S S
C 1 C 2
V S S H T 9 1 7 0 B /D
1 8 D IP /S O P
N o t e : ( a ) X 'T A L = 3 . 5 7 9 5 4 5 M H z c r y s t a l
C 1 = C 2 @ 2 0 p F
( b ) X 'T A L = 3 . 5 8 M H z c e r a m ic r e s o n a t o r
C 1 = C 2 @ 3 9 p F
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