1

An investigation of the screen grid tap

A search for the hidden arguments.
By Rudolf Moers

APPENDICES
Mentioned screen grid taps xTURNS in these appendices are the values from column 3 of table 7.

For all anode characteristics in appendix A, C and E, the Vg1k-curves in the intervals
0V ≤ Vak ≤ 300V are measured with the µTracer and the Vg1k-curves in the intervals
300V ≤ Vak ≤ 600V are extrapolated, so not measured.
By this 5 or 4 points of intersection on the load line are made with measured Vg1k-curves and
the other 3 or 4 points of intersection on the load line are made with extrapolated Vg1k-curves.

A. Measured with the µTracer and extrapolated anode characteristics of EL84 for several screen
grid taps. Load line for EL84 goes through working point Vak,w = 300V, Ia,w = 40mA and
Vg1k,w ≈ − 9.1V.

B. Constructed dynamic transconductance characteristics of EL84 for several screen grid taps.

C. Measured with the µTracer and extrapolated anode characteristics of EL34 for several screen
grid taps. Load line for EL34 goes through working point Vak,w = 300V, Ia,w = 80mA and
Vg1k,w ≈ −16.1V.

D. Constructed dynamic transconductance characteristics of EL34 for several screen grid taps.

E. Measured with the µTracer and extrapolated anode characteristics of KT88 for several screen
grid taps. Load line for KT88 goes through working point Vak,w = 300V, Ia,w = 80mA and
Vg1k,w ≈ −26.4V.

F. Constructed dynamic transconductance characteristics of KT88 for several screen grid taps.

The constructed dynamic transconductances of appendix B are derived from the anode characteristics
of appendix A (see the points of intersection of the Vg1k-curves with the load lines).

The constructed dynamic transconductances of appendix D are derived from the anode characteristics
of appendix C (see the points of intersection of the Vg1k-curves with the load lines).

The constructed dynamic transconductances of appendix F are derived from the anode characteristics
of appendix E (see the points of intersection of the Vg1k-curves with the load lines).
 2

APPENDIX A
Measured with the µTracer and extrapolated anode characteristics of EL84 for several screen grid taps.
Load line for EL84 goes through working point Vak,w = 300V, Ia,w = 40mA and Vg1k,w ≈ − 9.1V.
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4
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7
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APPENDIX B
Constructed dynamic transconductance characteristics of EL84 for several screen grid taps.

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.00

90

80

70

60

50

Ia (mA)
40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.06

90

80

70

60

50
Ia (mA)

40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)
 9

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.11

90

80

70

60

50

Ia (mA)
40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.17

90

80

70

60

50
Ia (mA)

40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)
 10

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.23

90

80

70

60

50

Ia (mA)
40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.30

90

80

70

60

50
Ia (mA)

40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)
 11

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.36 90

80

70

60

50

Ia (mA)
40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.46

90

80

70

60

50
Ia (mA)

40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)
 12

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.56

90

80

70

60

50

Ia (mA)
40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.69

90

80

70

60

50
Ia (mA)

40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)
 13

EL84-no.1 Sd: Ia = f (Vg1k) for x-turns = 1.00

90

80

70

60

50

Ia (mA)
40

30

20

10

0
-14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
Vg1k (V)

And finally all these Sd together in one transconductance characteristic.

 14

APPENDIX C
Measured with the µTracer and extrapolated anode characteristics of EL34 for several screen grid taps.
Load line for EL34 goes through working point Vak,w = 300V, Ia,w = 80mA and Vg1k,w ≈ −16.1V.
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APPENDIX D
Constructed dynamic transconductance characteristics of EL34 for several screen grid taps.

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.00 120

110

100

90

80

Ia (mA)
70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.06

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)
 21

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.11

120

110

100

90

80

Ia (mA)
70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.17

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)
 22

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.23

120

110

100

90

80

Ia (mA)
70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.30

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)
 23

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.36

120

110

100

90

80

70

Ia (mA)
60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.46

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)
 24

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.56

120

110

100

90

80

Ia (mA)
70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 0.69

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)
 25

EL34-no.1 Sd: Ia = f (Vg1k) for x-turns = 1.00 120

110

100

90

80

Ia (mA)
70

60

50

40

30
-24 -22 -20 -18 -16 -14 -12 -10
Vg1k (V)

And finally all these Sd together in one transconductance characteristic.

 26

APPENDIX E
Measured with the µTracer and extrapolated anode characteristics of KT88 for several screen grid taps.
Load line for KT88 goes through working point Vak,w = 300V, Ia,w = 80mA and Vg1k,w ≈ −26.4V.
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28
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APPENDIX F
Constructed dynamic transconductance characteristics of KT88 for several screen grid tap.

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.00 120

110

100

90

80

Ia (mA)
70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.06

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)
 33

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.11

120

110

100

90

80

Ia (mA)
70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.17

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)
 34

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.23 120

110

100

90

80

Ia (mA)
70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.30

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)
 35

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.36

120

110

100

90

80

Ia (mA)
70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.46

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)
 36

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.56

120

110

100

90

80

Ia (mA)
70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 0.69

120

110

100

90

80
Ia (mA)

70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)
 37

KT88-no.1 Sd: Ia = f (Vak) for x-turns = 1.00 120

110

100

90

80

Ia (mA)
70

60

50

40

30
-34 -32 -30 -28 -26 -24 -22 -20 -18
Vg1k (V)

And finally all these Sd together in one transconductance characteristic.