Preliminary

VGS
STK0380P
Semiconductor
Advanced Power MOSFET

SWITCHING REGULATOR APPLICATIONS

Features
• High Voltage: BVDSS=800V(Min.)
• Low Crss : Crss=5.0F(Typ.)
• Low gate charge : Qg=18nC(Typ.)
• Low RDS(on) :RDS(on)=4.8Ω(Max.)

Ordering Information
Type NO. Marking Package Code

STK0380P STK0380 TO-220AB-3L

Outline Dimensions unit : mm

Φ3.70 Max.
9.80~10.20
15.35~16.05

12.80~13.00

9.05~9.35

3.00 Typ.

1.37 Max.
12.68~13.48

1.62 Max.

0.90 Max.

2.54 Typ. 2.54 Typ.

0.60 Max.

2.60 Max.

4.35~4.65

PIN Connections
1. Gate
2. Drain
3. Source

Preliminary 1
 Preliminary
STK0380P
Absolute maximum ratings (Tc=25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 800 V
Gate-source voltage VGSS ±30 V
TC=25℃ 3.0 A
Drain current (DC) ID
TC=100℃ 1.9 A
*
Drain current (Pulsed) IDM 12 A
Drain power dissipation PD 107 W
Avalanche current (Single) ② IAS 3 A
Single pulsed avalanche energy ② EAS 320 mJ
Avalanche current (Repetitive) ① IAR 12 A
Repetitive avalanche energy ① EAR 10.7 mJ
Junction temperature TJ 150 °C
Storage temperature range Tstg -55~150 °C
* Limited by maximum junction temperature

Characteristic Symbol Typ. Max Unit

Thermal Junction-case Rth(J-C) - 1.17
℃/W
resistance Junction-ambient Rth(J-A) - 62.5

Preliminary 2
 Preliminary
STK0380P
Electrical Characteristics (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage V(BR)DSS ID=250 ㎂, VGS=0V 800 - - V
Gate threshold voltage VGS(th) ID=250 ㎂, VGS= VDS 3.0 - 5.0 V
Drain-source cut-off current IDSS VDS=800V, VGS=0V - - 10 ㎂
Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 ㎁
Drain-source on-resistance ④ RDS(on) VGS=10V, ID=1.5A - 4.0 4.8 Ω
Forward transfer conductance ④ gfs VDS=50V, ID=1.5A - 3 - S
Input capacitance Ciss - 562 705
VGS=0V, VDS=25V
Output capacitance Coss
f=1 MHz
- 50 70 ㎊
Reverse transfer capacitance Crss - 5.0 7.5
Turn-on delay time td(on) - 15 40
VDD=400V, ID=3.0A
Rise time tr RG=25Ω - 43.5 95
㎱
Turn-off delay time td(off) - 22.5 55
③④
Fall time tf - 32 75
Total gate charge Qg VDS=640V, VGS=10V - 18 21.5
Gate-source charge Qgs ID=3.0A - 3.4 - nC
③④
Gate-drain charge Qgd - 5.9 -

Source-Drain Diode Ratings and Characteristics (Tc=25°C)

Characteristic Symbol Test Condition Min Typ Max Unit
Source current (DC) IS Integral reverse diode - - 3.0
A
Source current (Pulsed) ① ISP in the MOSFET - - 12
Forward voltage ④ VSD VGS=0V, IS=3.0A - - 1.4 V
Reverse recovery time trr IS=3.0A, VGS=0V - 642 - ㎱
Reverse recovery charge Qrr dIS/dt=100A/㎲ - 4.0 - μC

Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=67mH, IAS=3.0A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse width≤ 300 ㎲, Duty cycle≤ 2%
④ Essentially independent of operating temperature

Preliminary 3
 Preliminary
STK0380P

The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

Preliminary 4