FT01...

SURFACE MOUNT TRIAC

SOT223
(Plastic) On-State Current Gate Trigger Current
1 Amp < 3 mA to < 25 mA

Off-State Voltage
MT2 200 V ÷ 400 V (02, 03)
200 V ÷ 600 V (04, 05, 07, 09, 10)

MT1
MT2 The FT01 series of TRIACs uses a high
performance PNPN technology.
G
These parts are intended for general
purpose applications where logic
compatible gate sensitivity is required
using surface mount technology.

Absolute Maximum Ratings, according to IEC publication No. 134

SYMBOL PARAMETER CONDITIONS Min. Max. Unit

IT(RMS) RMS On-state Current All Conduction Angle, Tab = 90 ºC 1.0 A
ITSM Non-repetitive On-State Current Half Cycle, 60 Hz 8.5 A
ITSM Non-repetitive On-State Current Half Cycle, 50 Hz 8 A
I2t Fusing Current tp = 10 ms, Half Cycle 0.35 A2s
IGM Peak Gate Current 20 µs max. 1 A
PGM Peak Gate Dissipation 20 µs max. 2 W
PG(AV) Gate Dissipation 20 ms max. 0.1 W
di/dt Critical rate of rise of on-state current IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz 20 A/µs
Tj = 125 ºC
Tj Operating Temperature -40 +125 ºC
Tstg Storage Temperature -40 +150 ºC
Tsld Soldering Temperature 1.6 mm from case, 10s max. 260 ºC

SYMBOL PARAMETER VOLTAGE Unit

B D M*
VDRM Repetitive Peak Off State 200 400 600 V
VRRM Voltage

* 04, 05, 07, 09 & 10 sensitivities

Mar - 03

This datasheet has been downloaded from http://www.digchip.com at this page

 FT01...N

SURFACE MOUNT TRIAC

Electrical Characteristics
SYMBOL PARAMETER CONDITIONS Quadrant SENSITIVITY Unit
02 03 04 05 07 09 10
IGT Gate Trigger Current VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 MAX 3 3 5 5 5 10 25 mA
Q4 MAX 3 5 5 7 10 25
IDRM /IRRM Off-State Leakage Current VD = VDRM , Tj = 125 ºC MAX 0.5 mA
VR = VRRM , Tj = 25 ºC MAX 5 µA
Vto Threshold Voltage Tj = 125 ºC MAX 0.95 V
Rd Dynamic Resistance Tj = 125 ºC MAX 400 mΩ
VTM * On-state Voltage IT = 1.1 Amp, tp = 380 µs, Tj = 25 ºC MAX 1.5 V
VGT Gate Trigger Voltage VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q4 MAX 1.3 V
VGD Gate Non Trigger Voltage VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q4 MIN 0.2 V
IH* Holding Current IT = 50 mA Tj = 25 ºC MAX 7 10 mA
IL Latching Current IG = 1.2 IGT, Tj = 25 ºC Q1,Q3,Q4 MAX 7 10 25 25 mA
Q2 MAX 14 20 25 50
dv / dt* Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open MIN 10 20 50 200 V/µs
Tj = 125 ºC
(dv/dt)c* Critidal rise rate of (di/dt)c= 0.44 A/ms Tj = 110 ºC MIN 0.5 1 2 4.4 V/µs
commutating off-state
Voltage
Rth(j-l) Thermal Resistance
60 ºC/W
Junction-Leads for AC

Rth(j-a) Thermal Resistance

Junction-Ambient 150 ºC/W

(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PART NUMBER INFORMATION

F T 01 05 B N 00 RB
FAGOR PACKAGING
FORMING
TRIAC
CASE
VOLTAGE
CURRENT
SENSITIVITY

Mar - 03
 FT01...N

SURFACE MOUNT TRIAC

Fig. 1: Maximum power dissipation versus Fig. 2: Correlation between maximum
RMS on-state current power dissipation and maximum allowable
temperature (Tamb and T tab).

P (W) P (W) T tab (ºC)

1.6 1.6
α = 180 º Rth (j-l) ºC/W
180 º
1.4 1.4 -90
α
α
1.2 α = 120 º 1.2 -95

1.0 1.0 -100

α = 90 º Rth (j-a) ºC/W
0.8 0.8 -105
α = 60 º
0.6 0.6 -110

0.4 0.4 -115

α = 30 º

0.2 0.2 -120

0.0 IT(RMS)(A) 0.0 -125 Tamb (ºC)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140

Fig. 3: RMS on-state current versus tab Fig. 4: Relative variation of thermal impedance
temperature junction to ambient versus pulse duration.

I T(RMS) (A) Zth(j-a) / Rth(j-a)

1.2 1.00

1.0

α = 180 º
0.8

0.6 0.10

0.4
Standard foot print, e(Cu) = 35 µm
0.2

0 T tab (ºC) 0.01 tp (s)

0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 5: Relative variation of gate trigger current Fig. 6: Non repetitive surge peak on-state
and holding current versus junction temperature. current versus number of cycles.
Igt (Tj) Ih (Tj)
Igt (Tj = 25 ºC) Ih (Tj = 25 ºC) I TSM (A)
2.6 8
Tj initial = 25 ºC
2.4
2.2
2.0 6
Igt
1.8
1.6
4
1.4
1.2 Ih

1.0 2
0.8
0.6
0.4 Tj (ºC) 0 Number of cycles
-40 -20 0 20 40 60 80 100 120 140 1 10 100 1000

Mar - 03
 FT01...N

SURFACE MOUNT TRIAC

Fig. 7: Non repetitive surge peak on-state Fig. 8: On-state characteristics (maximum
current for a sinusoidal pulse with width: values).
tp ≤ 10 ms, and corresponding value of I2t.

ITSM(A). I2t (A2s) ITM(A)

100 10
Tj initial = 25 ºC Tj initial
25 ºC

10 ITSM
Tj max

Tj max
1 Vto = 1.10 V
Rt = 0.420Ω
I2 t

0.1 tp(ms) 0.1 VTM(V)

1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

PACKAGE MECHANICAL DATA SOT223 (Plastic)

A B
DIMENSIONS
16º max. (4x)
C
REF. Milimeters
10º max.
H
Min. Typ. Max.
J K
A 6.30 6.50 6.70
E I
D
B 6.70 7.00 7.30
C 3.30 3.50 3.70
F
D - 4.60 -
E - 2.30 -
F 2.95 3.00 3.15
G 0.65 0.70 0.85
H 1.50 1.60 1.70
I 0.50 0.60 0.70
J - 0.02 0.05
G K 0.25 0.30 0.35
Weight: 0.11 g

FOOT PRINT
3.3

1.5

(3x) 1 2.3 6.4

1.5

4.6

Mar - 03