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    MJ 10012

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    victor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    MJ 10012

    Uploaded by

    victor
    10 views3 pages

    Original Title

    Mj 10012

    Copyright

    © © All Rights Reserved

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    Copyright:

    © All Rights Reserved
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    10 views3 pages

    MJ 10012

    Uploaded by

    victor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    MJ10012

    NPN Silicon Power Darlington Transistor


    TO3 Type Package

    Description:
    The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed
    for automotive ignition, switching regulation and motor control applications.

    Features:
    D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min)
    D 175 Watts Capability at 50 Volts

    Absolute Maximum Ratings:


    Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
    Collector−Emitter Voltage (RBE = 273 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550V
    Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
    Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
    Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
    Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Total Power Dissipation, PD
    TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
    TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
    Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/5C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.05C/W
    Lead Temperature (During Soldering, 1/8” from case, 5 sec), TL . . . . . . . . . . . . . . . . . . . . . . . +2755C
    Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 3 10%.
    Electrical Characteristics: (TC = +255C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics (Note 2)
    Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Vclamp = 400V 400 − − V
    VCER(sus) IC = 200mA, RBE = 273 , Vclamp = 400V 425 − − V
    Collector Cutoff Current ICER VCER = 550V, RBE = 273 − − 1.0 mA
    ICBO VCBO= 600V, IE = 0 − − 1.0 mA
    Emitter Cutoff Current IEBO VEB = 6V, IC = 0 − − 40 mA
    ON Characteristics (Note 3)
    DC Current Gain hFE VCE = 6V, IC = 3A 300 550 −
    VCE = 6V, IC = 6A 100 350 2000
    VCE = 6V, IC = 10A 20 150 −
    Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 600mA − − 1.5 V
    IC = 6A, IB = 600mA − − 2.0 V
    IC = 10A, IB = 2A − − 2.5 V
    Base−Emitter Saturation Voltage VBE(sat) IC = 6A, IB = 600mA − − 2.5 V
    IC = 10A, IB = 2A − − 3.0 V
    Base−Emitter ON Voltage VBE(on) IC = 10A, VCE = 6V − − 2.8 V
    Diode Forward Voltage VF IF = 10A − 2.0 3.5 V
    Dynamic Characteristics
    Output Capacitance Cob VCB = 10V, IE = 0, ftest = 100kHz 165 − 350 pF
    Switching Characteristics
    Storage Time ts VCC = 12V, IC = 6A, IB1 = IB2 = 300mA − 7.5 15 5s
    Fall Time tf − 5.2 15 5s
    Functional Tests
    Pulsed Energy Test IC2L/2 − − 180 mJ

    Note 2. Pulse Test: Pulse Width = 3005 s, Duty Cycle = 2%.

     1k  30

    E
    .135 (3.45) Max
    .350 (8.89) .875 (22.2)
    Dia Max
    Seating
    Plane

    .312 (7.93) Min .040 (1.02)

    Emitter 1.187 (30.16)

    .215 (5.45) .665


    (16.9)
    .156 (3.96) Dia
    (2 Holes)
    .430
    (10.92)
    .188 (4.8) R Max

    .525 (13.35) R Max


    Base Collector/Case

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