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    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

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    rolandse
    The document summarizes the specifications of the BD204 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package, is intended for medium power switching and amplifier applications, and has characteristics like low saturation voltage, wide safe operating area, and DC current gain of 30. Key parameters including maximum ratings, thermal characteristics, electrical characteristics, and package outline are provided.

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    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    rolandse
    40 views3 pages
    The document summarizes the specifications of the BD204 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package, is intended for medium power switching and amplifier applications, and has characteristics like low saturation voltage, wide safe operating area, and DC current gain of 30. Key parameters including maximum ratings, thermal characteristics, electrical characteristics, and package outline are provided.

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    BD204_SavantIC

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    The document summarizes the specifications of the BD204 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package, is intended for medium power switching and amplifier applications, and has characteristics like low saturation voltage, wide safe operating area, and DC current gain of 30. Key parameters including maximum ratings, thermal characteristics, electrical characteristics, and package outline are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views3 pages

    Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    rolandse
    The document summarizes the specifications of the BD204 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package, is intended for medium power switching and amplifier applications, and has characteristics like low saturation voltage, wide safe operating area, and DC current gain of 30. Key parameters including maximum ratings, thermal characteristics, electrical characteristics, and package outline are provided.

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    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors BD204

    DESCRIPTION ·
    www.datasheet4u.com
    ·With TO-220C package
    ·Low saturation voltage
    ·Complement to type BD203
    ·Wide area of safe operation

    APPLICATIONS
    ·For medium power switching and
    amplifier applications

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base

    3 Base

    Absolute maximum ratings (Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -60 V

    VCEO Collector-emitter voltage Open base -60 V

    VEBO Emitter -base voltage Open collector -5 V

    IC Collector current (DC) -8 A

    ICM Collector current-Peak -12 A

    IB Base current -3 A

    PT Total power dissipation TC=25 60 W

    Tj Junction temperature 150

    Tstg Storage temperature -65~150

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-C Thermal resistance junction to case 2.08 /W


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors BD204

    CHARACTERISTICS
    www.datasheet4u.com
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-0.2A ;IB=0 -60 V

    V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -60 V

    V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V

    VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V

    VCEsat-2 Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V

    VBEsat Base-emitter saturation voltage IC=-6A; IB=-0.6A -2.0 V

    ICEO Collector cut-off current VCE=-30V ;IB=0; -0.2 mA

    ICBO Collector cut-off current VCB=-40V ;IE=0;Tj=150 -1.0 mA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -0.5 mA

    hFE DC current gain IC=-2A ; VCE=-2V 30

    fT Transition frequency IC=-0.3A ; VCE=-3V 7.0 MHz

    VBE Base-emitter on voltage IC=-3A;VCE=-2V -1.5 V

    2
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors BD204

    PACKAGE OUTLINE

    www.datasheet4u.com

    Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

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