Transistors

2SA0683, 2SA0684 (2SA683, 2SA684)

Silicon PNP epitaxial planar type
Unit: mm
5.9±0.2 4.9±0.2
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384

8.6±0.2
■ Features
0.7±0.1
• Complementary pair with 2SC1383 and 2SC1384

0.7+0.3
–0.2
• Allowing supply with the radial taping

13.5±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage 2SA0683 VCBO −30 V
0.45+0.2 0.45+0.2
–0.1
(Emitter open) 2SA0684 −60 –0.1

(1.27) (1.27)
Collector-emitter voltage 2SA0683 VCEO −25 V 1: Emitter
2: Collector
(Base open) −50

(3.2)
2SA0684 1 2 3 3: Base
Emitter-base voltage (Collector open) VEBO −5 V 2.54±0.15 EIAJ: SC-51
TO-92L-A1 Package
Collector current IC −1 A
Peak collector current ICP −1.5 A
Collector power dissipation PC 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SA0683 VCBO IC = −10 µA, IE = 0 −30 V
(Emitter open) 2SA0684 −60
Collector-emitter voltage 2SA0683 VCEO IC = −2 mA, IB = 0 −25 V
(Base open) 2SA6084 −50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA
Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −500 mA 85 340 
hFE2 VCE = −5 V, IC = −1 A 50
Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V
Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.2 V
Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S
hFE 85 to 170 120 to 240 170 to 340

Note) The part numbers in the parenthesis show conventional part number.

Publication date: November 2002 SJC00001BED 1

2SA0683, 2SA0684

PC  Ta IC  VCE IC  I B
1.2 −1.5 −1.2
Ta = 25°C VCE = −10 V
Ta = 25°C
Collector power dissipation PC (W)

1.0 −1.25 IB = −10 mA −1.0

−9 mA

Collector current IC (mA)

Collector current IC (A)
−8 mA
0.8 −1.0 − 0.8
−7 mA
−6 mA
0.6 − 0.75 −5 mA − 0.6

−4 mA
0.4 − 0.50 −3 mA − 0.4

−2 mA
0.2 − 0.25 − 0.2
−1 mA

0 0 0
0 20 40 60 80 100 120 140 160 0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10 −12
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

VCE(sat)  IC VBE(sat)  IC hFE  IC

−100 −100 600
IC / IB = 10 IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = −10 V
Base-emitter saturation voltage VBE(sat) (V)

500

Forward current transfer ratio hFE

−10 −10
400

Ta = 75°C
Ta = −25°C 25°C
−1 −1 300
Ta = 75°C 75°C
25°C
25°C
200
−25°C
− 0.1 −25°C − 0.1
100

− 0.01 − 0.01 0
− 0.01 − 0.1 −1 −10 − 0.01 − 0.1 −1 −10 − 0.01 − 0.1 −1 −10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

fT  I E Cob  VCB VCER  RBE

200
VCB = −10 V 50 −120
C (pF)

Ta = 25°C IE = 0 IC = −10 mA
180 45 f = 1 MHz Ta = 25°C
(V)
(Common base, input open circuited) ob

Ta = 25°C −100
Transition frequency fT (MHz)

160 40
(Resistor between B and E) VCER

140 35
−80
120 30
Collector-emitter voltage
Collector output capacitance

100 25 −60
2SA0684
80 20
−40
60 15
2SA0683
40 10
−20
20 5

0 0 0
1 2 3 5 10 20 30 50 100 −1 −10 −100 0.1 1 10 100
Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ)

2 SJC00001BED
 2SA0683, 2SA0684

ICEO  Ta Safe operation area

104 −10
VCE = −10 V Single pulse
Ta = 25°C

ICP
t = 10 ms
103 −1

Collector current IC (A)

IC
ICEO (Ta = 25°C)

t=1s
ICEO (Ta)

102 − 0.1

10 − 0.01

2SA0683
2SA0684
1 − 0.001
0 20 40 60 80 100 120 140 160 − 0.1 −1 −10 −100
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJC00001BED 3
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2002 JUL
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