BTA08 S/A

BTB08 S/A

SENSITIVE GATE TRIACS

..
FEATURES
VERY LOW IGT = 10mA max

. LOW IH = 25mA max

BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)

DESCRIPTION
A1
The BTA/BTB08 S/A triac family are high perform- A2
G
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required. TO220AB
Application on 4Q such as phase control and static (Plastic)
switching.
ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current BTA Tc = 75°C 8 A

(360° conduction angle)
BTB Tc = 80°C

ITSM Non repetitive surge peak on-state current tp = 8.3 ms 84 A

( Tj initial = 25°C )
tp = 10 ms 80

I2t I2 t value tp = 10 ms 32 A2s

dI/dt Critical rate of rise of on-state current Repetitive 10 A/µs

Gate supply : IG = 50mA diG/dt = 0.1A/µs F = 50 Hz

Non 50
Repetitive

Tstg Storage and operating junction temperature range - 40 to + 150 °C

Tj - 40 to + 110 °C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 °C

from case

Symbol Parameter BTA / BTB08- Unit

400 S/A 600 S/A 700 S/A

VDRM Repetitive peak off-state voltage 400 600 700 V

VRRM Tj = 110°C

March 1995 1/5

BTA08 S/A / BTB08 S/A

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W

BTB 3.2

Rth (j-c) AC Junction to case for 360° conduction angle BTA 3.3 °C/W
( F= 50 Hz)
BTB 2.4

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Quadrant Suffix Unit

S A

IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 10 10 mA

IV MAX 10 25

VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V

VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V

tgt VD=VDRM IG = 40mA Tj=25°C I-II-III-IV TYP 2 µs

dIG/dt = 0.5A/µs

IL IG= 1.2 IGT Tj=25°C I-III-IV TYP 20 20 mA

II 40 40

IH * IT= 100mA gate open Tj=25°C MAX 25 25 mA

VTM * ITM = 11A tp= 380µs Tj=25°C MAX 1.75 V

IDRM VDRM Rated Tj=25°C MAX 0.01 mA

IRRM VRRM Rated
Tj=110°C MAX 0.75

dV/dt * Linear slope up to VD=67%VDRM Tj=110°C MIN 10 10 V/µs

gate open

(dV/dt)c * (dI/dt)c= 3.5A/ms Tj=110°C TYP 5 5 V/µs

* For either polarity of electrode A2 voltage with reference to electrode A1.

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 BTA08 S/A / BTB08 S/A
ORDERING INFORMATION

Package IT(RMS) VDRM / VRRM Sensitivity Specification

A V S A

BTA 8 400 X X
(Insulated)
600 X X

700 X X

BTB 400 X X
(Uninsulated)
600 X X

700 X X

Fig.1 : Maximum RMS power dissipation versus RMS Fig.2 : Correlation between maximum RMS power
on-state current (F=50Hz). dissipation and maximum allowable temperatures (Tamb
(curves are cut off by (dI/dt)c limitation) and Tcase) for different thermal resistances heatsink +
contact (BTA).

Fig.3 : Correlation between maximum RMS power Fig.4 : RMS on-state current versus case temperature.
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).

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BTA08 S/A / BTB08 S/A
Fig.5 : Relative variation of thermal impedance versus Fig.6 : Relative variation of gate trigger current and
pulse duration. holding current versus junction temperature.

Zth/Rth
1

Zt h( j-c)

0.1 Zt h(j-a)

tp( s)
0.01
1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2

Fig.7 : Non Repetitive surge peak on-state current Fig.8 : Non repetitive surge peak on-state current for a
versus number of cycles. sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

Fig.9 : On-state characteristics (maximum values).

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 BTA08 S/A / BTB08 S/A

PACKAGE MECHANICAL DATA

TO220AB Plastic

REF. DIMENSIONS
Millimeters Inches
A H Min. Max. Min. Max.
G J A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
I
D C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
B
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190
F I 3.55 4.00 0.140 0.158
O
L
P J 1.15 1.39 0.045 0.055
C
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
M
N 4.58 5.58 0.18 0.22
= N =
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038

Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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