Difference Between D-MOSFET and E-MOSFET

8/26/2021 Difference Between D-MOSFET and E-MOSFET
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Difference Between D-MOSFET and E-

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Main Difference Between Depletion MOSFET and

Enhancement MOSFET
Table of Contents 
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1. MOSFET
2. D-MOSFET “Depletion MOSFET”
3. E-MOSFET “Enhancement MOSFET”
4. Differences between Depletion MOSFET and Enhancement MOSFET
MOSFET
MOSFET is an acronym for Metal Oxide Semiconductor Field Effect
Transistor. It is a type of FET (Field Effect Transistor) that has an
insulated metal oxide layer between its gate and channel. On the
contrary, JFETs gate is connected with its channel. The plus point of the
insulated gate is its superior speed and performance with very little
leakage current.
Now MOSFET is classified into two types depletion type MOSFET “D-
MOSFET” and Enhancement type MOSFET “E-MOSFET. Both of these
MOSFET’s are widely used in electronics, integrated and embedded
circuits.
The MOSFET has 4 terminals Drain, Gate, Source and Body. However,
the body terminal is always connected with the source terminal.
Therefore, we are left with only three terminals. The MOSFET conducts
current between the source and drain. The path for current between the
source and drain is called a channel. The width of this channel is
controlled by the voltage at the gate terminal.
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Before going into the differences between D-MOSFET & E-MOSFET, we

are going to little bit discuss their basics first.
D-MOSFET “Depletion MOSFET”

Depletion MOSFET or D-MOSFET is a type of MOSFET where the
channel is constructed during the process of manufacturing. Therefore,
the D-MOSFET can conduct between its drain and gate when the VGS = 0
volts. Therefore, D-MOSFET is also known as normally ON transistor.
If Gate and source is connected in forward bias and the VGS is increased,
more majority carriers will get induced in the channel and its width will
increase. It will result in increasing the current flow between drain and
source.
If the gate is connected in reverse bias and voltage is decreased beyond

0v, the channel width will decrease as well as the current will decrease.
Decreasing the channel width will deplete the channel of the charge
carriers until the channel width becomes zero and it vanishes. At this
point, the D-MOSFET stops conduction and this VGS voltage is called VTh
threshold voltage.
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The D-MOSFET can be N-channel D-MOSFET or P-channel D-MOSFET

depending on the channel being used. The type of channel also affects its
biasing as well as its speed and current capacities.
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In N-channel D-MOSFET, the source, drain and channel are made during
the manufacturing from N-type material upon a P-substrate. The channel
contains electrons as charge carriers. There is a metal oxide insulating
layer between the gate electrode and the channel or P-substrate.
When the gate is connected in reverse bias i.e. negative voltage is

applied, the holes from the P-substrate will attract towards the gate
depleting it of the electrons and reduce the channel size. At a certain –
Vth, the MOSFET will stop conduction. Therefore, N-channel D-MOSFET
has a negative threshold voltage
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In P-channel D-MOSFET, The source, drain, and channel is made up of

P-type material upon an N-type substrate. P-channel has holes as the
charge carrier. Therefore, to reduce the channel width or to attract
electrons from the N-substrate, P-channel MOSFET is applied with
positive gate voltage VGS. This positive voltage attracts the electrons from
the substrate to deplete the channel of holes, thus eliminating the channel
as well as the current flow. Therefore, the P-channel D-MOSFET has a
positive threshold voltage.
If the gate and source is connected in forward bias, the potential

difference will induce more charge carriers inside the channel thus
enhancing (increasing the width) of the channel.
The D-MOSFET can work in both depletion and enhancement modes.

While the enhancement MOSFET cannot work in depletion mode.
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E-MOSFET “Enhancement MOSFET”

Enhancement MOSFET or E-MOSFET is a type of MOSFET where
there is no channel constructed during its fabrication but it is induced in
the substrate using the gate voltage. The E-MOSFET does not conduct
when there is no gate voltage i.e. VGS= 0v. Therefore, E-MOSFET is also
known as normally OFF transistor.
In case, the VGS or gate voltage is zero, there is no channel. Therefore,

there is no path for the conduction of current between its source and
drain.
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By applying a voltage to the gate, charge carriers are induced in the

substrate that produces a channel for the conduction of current between
the source and drain.
E-MOSFET is also classified into N-channel and P-channel E-MOSFET.

The biasing and electrical characteristics of both channels are quite
different.
N-channel and P-channel MOSFET has the same operation as the

Depletion type MOSFET except there is no channel, to begin with;
instead, the gate voltage is used to inject the charge carriers in the
substrate to induce a channel between the source and drain. The gate is
connected in forward bias to induce the charge carriers in the channel.
Once the channel is induced, the current starts to flow between the
source and drain.
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Differences between Depletion MOSFET and Enhancement

MOSFET
The following comparison table shows the main differences between D-
MOSFET and E-MOSFET.
Depletion MOSFET Enhancement MOSFET
The type of MOSFET where the The type of the MOSFET where
channel depletes with the gate the channel is enhanced or
voltage is know as depletion or induced using the gate voltage is
simply D-MOSFET. known as E-MOSFET.
The channel is fabricated during There is no channel during its

manufacturing. manufacturing.
It conducts current between its

It does not conduct current when
source and drains when there is
there is no Gate voltage VGS.
no Gate voltage VGS.
Applying reverse voltage does not

Applying reverse voltage to the
affect E-MOSFET since there is no
gate reduces the channel width.
channel.
Applying the forward voltage

Applying forward voltage to the
generates and increases the width
gate increases the channel width.
of the channel.
It can work in both depletion and It can only work in enhancement

enhancement mode. mode.
It is a normally ON transistor. It is a normally OFF transistor.
It switches OFF with reverse It switches ON with the forward

biasing of gate. biasing of the gate.
There is no threshold voltage for There a threshold voltage at which

switching ON the MOSFET. the MOSFET switches ON.
Diffusion or subthreshold current E-MOSFET has sub-threshold

does not exist. current leakage between its
source and drain.
That’s it. Now you know the basic difference between the D-MOSFET and
E-MOSFET and all its related components and types. Let us know in the
comment box if you have any other differences between them.
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Difference Between BJT and FET

Transistors
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What are the Main Differences Between BJT and FET

Transistor?
A transistor is a semiconductor device that is used for switching and
amplification. BJT and FET are two different types of transistors. Apart
from being transistors and both able to do switching as well as
amplification, they are quite different from each other. For instance, BJT is
a current-controlled current device while FET is a voltage-controlled
current device. There are several other differences between BJT and
FET.
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Before going into the list of differences between BJT and FET, we are
going to discuss the basics of BJT and FET.
Table of Contents 
1. BJT (Bipolar Junction Transistor)
2. FET (Field Effect Transistor)
3. Key Differences Between BJT and FET
4. Properties and Characteristics of BJT & FET
BJT (Bipolar Junction Transistor)

BJT stands for Bipolar Junction Transistor. These types of transistors are
bipolar means that the current flow is due to two types of charge carriers
i.e. electrons and holes. There are two types of BJTs i.e. NPN and PNP
transistor. They are used for switching as well as amplification of a small
signal.
A BJT is made of three alternating layers of P-type and N-type

semiconductor materials. NPN is made by sandwiching P-layer between
two N-layers while PNP is made by sandwiching N-layer between two P-
layers. Since there are three alternating layers, there are 2 PN junctions
in a BJT transistor, thus the name junction transistor
The three terminals of BJT transistors are named Emitter, Base and
Collector. Each terminal is connected with each layer of the transistor.
The base is the middle layer that is the most lightly doped layer of all. The
emitter and collector are both heavily doped with the emitter
comparatively heavily doped than the collector.
By connecting the base-collector junction in reverse and base-emitter

junction in forward bias allows the flow of current. Based on the type of
BJT, current entering through the base allows a current between the
collector and emitter which is proportional to the base current. Therefore,
BJT is also known as a current-controlled current device.
BJT can operate in 3 regions i.e. Active, Saturated and cutoff region. In
the active region, it acts as an amplifier where the collector current is
proportional to the base current. while in the saturated and cutoff region, it
acts as a switch to make or break a connection.
Since the input (base) is forward biased, the input impedance of a BJT is
very low in the range of 1K ohm while the output impedance is very high.
Therefore, the gain of the BJT amplifier is very high as compared to FET.
Since the current flow is due to electrons as well as holes, the recovery
time i.e. the time it takes to switch off and switch on is large as compared
to FET. Therefore, the BJT has a low switching speed as compared to
FET. BJT is not suitable for very high frequency.
BJT works if there is any base current i.e. it is controlled by the current
flow at its base terminal. Therefore, it consumes energy while operating.
Due to this, the BJT consumes more power which is wasted in the form of
heat.
Therefore, BJT gets hot very quickly and the temperature also affects its
operation. This is why its temperature must be regulated using large
heatsinks in order to work normally. BJT is temperature-dependent
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FET (Field Effect Transistor)

FET stands for the Field-Effect Transistor. The current flow in FET is due
to the flow of only one type of charge carrier i.e. either electrons or holes.
Therefore, FET is also known as a unipolar transistor. There are two
types of FET transistors i.e. JFET (Junction FET) and MOSFET (Metal
Oxide Semiconductor FET). These transistors are also used for switching
as well as amplification in electronic circuits.
The three terminals of FET are Drain, Gate and source. Based on its
construction, FET is available in two types i.e. N-channel FET or P-
channel FET. The channel refers to the path for the flow of current from
source to drain terminal. The carriers enter the channel through the
source and leave out at the drain. There are no PN junctions between the
source and drain. The Gate region is made from alternate material as
compared to the channel.
The Gate is reversed biased in order to form a depletion region so that

the channel between drain and source is formed. Which leads to the
current flow. Increasing the reverse bias voltage at the gate increases the
depletion region which results in increasing the current flow. Therefore,
the voltage at the gate is used to control the output current. Therefore
FET is also known as a voltage-controlled current device.
There is very little difference between the source and drain terminal. The
drain terminal should be connected to a more positive voltage as
compared to the source terminal. Therefore, they can be swapped i.e. the
drain and the source terminal can be interchanged by maintaining the
more positive voltage at the drain terminal.
The majority charge carrier is identified by the type of FET being used. N-
channel FET uses electrons for charge carrier while P-channel FET uses
holes for charge carrier.
.FET has 3 regions i.e. Active, saturated and cutoff region. The FET acts
as an amplifier in the active region while it acts as a switch in the
saturated and cutoff regions.
Since the input (gate) is reversed biased, the input impedance of FET is
very high in the range of 100M ohm which is why there is no current flow
at the gate terminal. And the output impedance is low. Therefore FET
does not have a very high gain as compared to BJT.
Since the FET utilize only one type of charge carrier either electrons or
holes, the recovery time is very fast. Therefore, its switching speed is very
fast and it can be used for very high-frequency applications.
FET does not have any current flow at its base or it is very negligible. Due
to which there is no energy consumption during operation. Therefore,
FET consumes very low power and is more energy efficient.
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Key Differences Between BJT and FET

The following comparison table shows the main differences between BJT
and FET transistors.
BJT FET
BJT stands for Bipolar Junction FET stands Field Effect

Transistor. Transistor.
The current flow is due to the flow

The current flow is due to the flow
of majority as well as minority
of majority charge carriers.
charge carriers.
Current flow is due to both The current flow is due to either

electrons and holes, therefore electrons or holes, therefore,
name bipolar transistor. named unipolar transistor.
The two types of FET are JFET

There are two types of BJT i.e.
and MOSFET, each with N-
NPN and PNP.
channel and p-channel as well.
BJT construction is comparatively The FET construction is

easier. comparatively difficult.
The 3 terminals are named The 3 terminals of FET are Source

emitter, base and collector. Gate and Drain.
There are 2 PN junction in BJT. There are no PN junctions.
It is a current-controlled current It is a voltage-controlled current

device. device.
The B-E junction is forward biased The Gate voltage is reversed

and the B-C junction is reversed biased while the drain voltage is
biased. maintained higher than the source.
The BJT has very simple biasing. The FET biasing is a little difficult.
The drain and source can be

The emitter and base cannot be
interchanged since the drain
interchanged or swapped.
should be more positive.
BJT has a very high gain. FET has a comparatively low gain.
The input impedance is very low in The input impedance is very high
the range of 1K ohms. in the range of 100M ohms.
The output impedance is very high The output impedance is very low
thus high gain. thus low gain.
There is current flow at its base There is negligible current at its

terminal. base terminal.
BJT has an offset voltage FET does not require offset

requirement. voltage.
Dependent on input current, It Dependent on input voltage, It

consumes high input energy at consumes less energy in normal
normal operation. operation.
BJT consume high power thus not FET consumes less power thus
ffi i t
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ffi i t 19/25
energy efficient. energy efficient.
BJT has a comparatively low FET has a comparatively very

switching speed. high switching speed.
BJT generates noise in the

FET is very noiseless.
system.
BJT is cheaper than FET. FET is costlier than FET.
The FET has a more compact and

The size of BJT is larger than FET.
smaller size than BJT.
BJT has a negative temperature FET has a positive temperature

coefficient. coefficient.
Suitable for low input current Suitable for low input voltage
application. application.
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Properties and Characteristics of BJT & FET

The following different properties differentiate both FET and BJT having
different characteristics and applications.
Construction
BJT has a very simple and easier construction made from alternating
semiconductor layers.
Either P-layer or N-layer is sandwiched between two N-layer or P-
layers respectively.
FET has a little complex construction.
FET has either an N-channel or a P-channel between the gate of the
P-layer or the N-layer respectively.
The channel is used for the flow of majority charge carriers.
PN Junctions
BJT transistor has two PN junctions between its collector and

emitter.
One PN junction between Collector and Base and the other between
Base and Emitter.
The FET transistor has no PN junction between its drain and source.
Charge Carrier
The BJT utilize both type of charge carriers for the flow of current.
During its operation, holes and electrons flow to conduct current.
The FET utilize only one type of charge carrier for the current flow.
It either uses holes in P-channel FET or electrons in N-channel FET.
Types
BJT has two types i.e. PNP and NPN

FET has two major types i.e. JFET (Junction FET) and MOSFET
(Metal Oxide Semiconductor FET)
Each type of FET is further classified on the basis of channel i.e. N-
channel and P-channel.
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Terminals
The 3 terminals of BJT are named Collector, Base and Emitter.

Emitter and Collector are made of the same material with emitter
having high doping rate.
The 3 terminals of FET are named Drain, Gate and Source.
The drain and source are the two ends of the channel made from the
same type.
Input and Output
The BJT is a current controlled device.

Its input (at the base) is current which controls the output collector
current.
The FET is a voltage-controlled device.
Its input is a voltage or potential difference (at the gate) which
controls the output current at the source.
I/O Impedance
BJT operates by having a base-emitter (input) junction in forward

bias.
Therefore, their input impedance is low.
Their output impedance is very high.
FET operates by having a gate at reverse bias.
Therefore, its input impedance is very high.
While its output impedance is very low.
Isolation
In BJT, the input at the base terminal is not isolated from the output.
In FET, the input at the gate terminal is in reverse bias and the input
is isolated from the output.
Biasing
In BJT, the B-E junction is in forward bias while the C-B junction is in
reverse bias.
IN FET, Gate is in reverse bias while the drain is at more positive
voltage than the collector.
Gain
The BJT has very high gain due to its very high output impedance.
The FET has comparatively lower gain due to its low output
impedance.
Terminal Swapping
In BJT, the terminals cannot be interchanged or swapped.

The emitter and collector are completely different terminals.
In FET, the drain and source terminal can be swapped.
The drain will be the terminal having more positive voltage.
Energy Consumption
The BJT takes current at its base terminal during continuous

operation.
Therefore, it consumes energy and drains the battery.
The FET operates on the basis of the gate voltage.

Therefore, it is energy efficient and does not drain the battery.
Switching Speed
Since BJT use the flow of both type of charge carriers, its recovery
time is slow.
Therefore, its switching speed is slow.
FET uses only one type of charge carrier having a fast recovery
time.
Therefore, FET has a very fast switching speed.
Noise
The BJT is noisy and generates noise in the system. Therefore, not
suitable for sensitive digital systems.
The FET is quite noiseless and is perfect for the sensitive system.
Cost
BJT having very simple construction is very cheap to manufacture.

FET having complex construction is comparatively costlier.
Size
The size of BJT is large. Therefore circuit made of BJT is bulkier.

The FET is more compact and smaller in size. Suitable for compact
and small circuits.
Application
BJT is used for amplification of a very small current having a

medium frequency.
However, the power consumption and size of the circuit should also
be considered.
The FET is preferred for small voltage signals having a very high
frequency.
Although they are costly and biasing is a little difficult.
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8/26/2021 Difference Between D-MOSFET and E-MOSFET

Block Down Frequency Converter

Basic Concepts Basic Electronics Comparisons Digital Electronics

EE Questions / Answers Electronics

Difference Between D-MOSFET and E-

Main Difference Between Depletion MOSFET and

FFC 0.5mm Side Entry Connector

Difference Between JFET and MOSFET

Difference Between BJT and FET Transistors

Before going into the differences between D-MOSFET & E-MOSFET, we

D-MOSFET “Depletion MOSFET”

If the gate is connected in reverse bias and voltage is decreased beyond

FFC 0.5mm Side Entry Connector

The D-MOSFET can be N-channel D-MOSFET or P-channel D-MOSFET

Difference Between Diode and SCR (Thyristor)

When the gate is connected in reverse bias i.e. negative voltage is

In P-channel D-MOSFET, The source, drain, and channel is made up of

If the gate and source is connected in forward bias, the potential

The D-MOSFET can work in both depletion and enhancement modes.

Bipolar Junction Transistor (BJT) | Construction, Working,

E-MOSFET “Enhancement MOSFET”

In case, the VGS or gate voltage is zero, there is no channel. Therefore,

By applying a voltage to the gate, charge carriers are induced in the

E-MOSFET is also classified into N-channel and P-channel E-MOSFET.

N-channel and P-channel MOSFET has the same operation as the

Difference Between DIAC and TRIAC

Differences between Depletion MOSFET and Enhancement

Depletion MOSFET Enhancement MOSFET

The channel is fabricated during There is no channel during its

It conducts current between its

Applying reverse voltage does not

Applying the forward voltage

It can work in both depletion and It can only work in enhancement

It is a normally ON transistor. It is a normally OFF transistor.

It switches OFF with reverse It switches ON with the forward

There is no threshold voltage for There a threshold voltage at which

Diffusion or subthreshold current E-MOSFET has sub-threshold

Difference Between Microprocessor and Microcontroller

 Tags D-MOSFET Depletion MOSFET E-MOSFET Enhancement MOSFET Mosfet

N-Channel MOSFET P-Channel MOSFET

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AC or DC leakage current sensor

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Basic Concepts Basic Electronics Comparisons Digital Electronics

EE Questions / Answers Electronics

Difference Between BJT and FET

What are the Main Differences Between BJT and FET

Difference Between Diode and Transistor

BJT (Bipolar Junction Transistor)

A BJT is made of three alternating layers of P-type and N-type

By connecting the base-collector junction in reverse and base-emitter

Difference Between DIAC and TRIAC

FET (Field Effect Transistor)

The Gate is reversed biased in order to form a depletion region so that

saturated and cutoff regions.

Bipolar Junction Transistor (BJT) | Construction, Working,

Key Differences Between BJT and FET

BJT stands for Bipolar Junction FET stands Field Effect

The current flow is due to the flow

Current flow is due to both The current flow is due to either