Surface-Mount Filtered Photodiode Assembly: SD 019-141-411-R - G - B

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Surface-Mount Filtered Photodiode

Assembly
SD 019-141-411-R
Advanced Photonix, Inc.
-G
-B
WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results

DESCRIPTION FEATURES
The SD019-141-411 is a is a silicon PIN 0.18mm² active area photodiode  Small Footprint
assembled in a 0805 package with an integrated bandpass filter. Three  Low Capacitance
standard wavelength ranges are available
 High Speed
RELIABILITY APPLICATIONS
This API high-reliability detector is in principle able to meet military test  Industrial Sensors
requirements (Mil-STD-750, Mil-STD-883) after proper screening and  Light Management
group test.
Contact API for recommendations on specific test conditions and  Handheld Devices
procedures.

Ta = 25°C UNLESS OTHERWISE NOTED


ABSOLUTE MAXIMUM RATINGS
PARAMETER MIN MAX UNITS
Reverse Voltage - 50 V
Operating Temperature -40 +105 °C
Storage Temperature -50 +125 °C
Soldering Temperature* - +260 °C

PART NUMBER BAND PASS RANGE [nm]


SD019-141-411 - R Red 625 – 655
SD019-141-411 - G Green 510 – 540
SD019-141-411 - B Blue 435 – 465

Information in this technical datasheet is believed to


be correct and reliable. However, no responsibility is REV 03-24-15
Page 1/2
assumed for possible inaccuracies or omission. © 2015 Advanced Photonix, Inc. All rights reserved.
Specifications are subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935
Surface-Mount Filtered Photodiode
Assembly
SD 019-141-411-R
Advanced Photonix, Inc.
-G
-B
WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results
OPTO-ELECTRICAL PARAMETERS Ta = 23°C unless noted otherwise
CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage If=10 mA 0.5 0.8 1.3 V
Responsivity (-R) VR = 0V;  = 450 nm - 0.06 - A/W
Responsivity (-G) VR = 0V;  = 550 nm - 0.12 - A/W
Responsivity (-B) VR = 0V;  = 625 nm - 0.05 - A/W
Breakdown Voltage IR = 100 A 50.0 - - V
Shunt Resistance V bias = 10 mV - 2.0 - G
Dark Current VR = 10 V - - 0.5 nA
Junction Capacitance VR = 5V; f = 1000 kHz - 6.0 - pF
Rise Time VR = 3V; Ri= 1000 - 10.0 - nS
TYPICAL PERFORMANCE

SPECTRAL RESPONSE

0.16

0.14

0.12
Responsivity,A/W

0.1

0.08

0.06

0.04

0.02

0
300 400 500 600 700 800
Wavelenght, nm

Information in this technical datasheet is believed to


be correct and reliable. However, no responsibility is REV 03-24-15
Page 2/2
assumed for possible inaccuracies or omission. © 2015 Advanced Photonix, Inc. All rights reserved.
Specifications are subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935

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