Lab Manual

POWER ELECTRONICS

Diploma
Vth Semester
Electrical Engineering

JHARKHAND RAI UNIVERSITY KAMRE, RANCHI

JHARKHAND
 EXPERIMENT NO: 01

AIM: To study the PN junction diode characteristics under Forward & Reverse
bias conditions.

APPARATUS REQUIRED-
PN Junction Kit, Ammeter , Voltmeter,
connecting wires, Resistor

THEORY:

A PN junction diode is a two terminal junction device. It conducts only in one

direction (only on forward biasing).
FORWARD BIAS:
On forward biasing, initially no current flows due to barrier potential. As the
applied potential exceeds the barrier potential the charge carriers gain sufficient energy
to cross the potential barrier and hence enter the other region. The holes, which are
majority carriers in the P-region, become minority carriers on entering the N-regions,
and electrons, which are the majority carriers in the N-region, become minority carriers
on entering the P-region. This injection of Minority carriers results in the current flow,
opposite to the direction of electron movement.
REVERSE BIAS:
On reverse biasing, the majority charge carriers are attracted towards the
terminals due to the applied potential resulting in the widening of the depletion region.
Since the charge carriers are pushed towards the terminals no current flows in the
device due to majority charge carriers. There will be some current in the device due to
the thermally generated minority carriers. The generation of such carriers is
independent of the applied potential and hence the current is constant for all increasing
reverse potential. This current is referred to as
Reverse Saturation Current (IO) and it increases with temperature. When the applied
reverse voltage is increased beyond the certain limit, it results in breakdown. During
breakdown, the diode current increases tremendously.

PROCEDURE:
FORWARD BIAS:
1. Connect the circuit as per the diagram.
2. Vary the applied voltage V in steps of 0.1V.
3. Note down the corresponding Ammeter readings If.
4. Plot a graph between Vf & If

OBSERVATIONS
1. Find the d.c (static) resistance = Vf / If.=
V2 −V1
2. Find the a.c (dynamic) resistance r = δV / δI (r = V/ I) = .=
I2 − I
1
3. Find the forward voltage drop = [Hint: it is equal to 0.7 for Si and 0.3
for Ge]=
REVERSE BIAS:
1. Connect the circuit as per the diagram.
2. Vary the applied voltage Vr in steps of 0.5V.
3. Note down the corresponding Ammeter readings Ir.
4. Plot a graph between Vr & Ir
5. Find the dynamic resistance r = δV / δI.
FORMULA FOR REVERSE SATURATION CURRENT (IO):

Io = ∂I/[exp(∂V/ηVT)]-1=

Where VT is the voltage equivalent of Temperature = kT/q

k is Boltzmann’s constant, q is the charge of the electron and T is the temperature in

degrees Kelvin.

η =1 for Silicon and 2 for Germanium

RESULT:

Forward and Reverse bias characteristics of the PN junction diode

was Studied and the dynamic resistance under
Forward bias = ---------------------
Reverse bias = ------------------ .

----
Reverse Saturation Current = ---------------- .
CIRCUIT DIAGRAM:

FORWARD BIAS:

(0-100)µA
+ -
1KΩ

+ +
(0-30)V (0-1)V
- -

REVERSE BIAS:

(0-100)µA
+ -
1KΩ
+
+ (0-30)V (0-30)V
- -
MODEL GRAPH
If (μA)
I2

Vr (V) I1

V1 V2 Vf (V)

Ir (μA)

TABULAR COLUMN:

FORWARD BIAS: REVERSE BIAS:

S.No. VOLTAGE(Vf) CURRENT(If) S..No. VOLTAGE(Vr) CURRENT(Ir)

(In Volts) (In µA) (In Volts) (In μA)
 EXPERIMENT NO : 2

Aim: To determine input & transfer Characteristics of MOSFET.

Apparatus required: MOSFET kit, Ammeter, Voltmeter, Power supply.
THEORY:
CIRCUIT DIAGRAM:

PROCEDURE:
Transfer characteristic :
 Connect the circuit according to circuit diagram

 Fix the output voltage and vary gate voltage

 Note the value of ID wrt VGS

 Plot the graph for transfer characteristic

Drain characteristic:
 Connect the circuit according to circuit diagram

 Fix the gate voltage and vary output terminal voltage

 Note the value of ID wrt Vds

 Plot the graph for drain characteristic
 OBSERVATION TABLE:

GRAPH:

RESULT:

PRECAUTION:

  Switch on the power supply after proper connection.

  Do the connection properly and tight.
  After switch off, take the nobe to minimum value for next reading.
 The reading should be taken properly.
 Experiment no : 3

AIM: To determine Characteristics of SCR.

APPARATUS REQUIRED: SCR kit, Voltmeter, ammeter, Power supply.

THEORY: The silicon controlled rectifier, SCR or thyristor symbol used for circuit
diagrams or circuit seeks to emphasis its rectifier characteristics while also showing
the control gate. As a result the thyristor symbol shows the traditional diode symbol
with a control gate entering near the junction.

SCR / Thyristor symbol for circuit diagrams and schematics

CIRCUIT DIAGRAM:
PROCEDURE:

OBSERVATION TABLE:
 GRAPH:

RESULT:

PRECAUTION:

  Switch on the power supply after proper connection.

  Do the connection properly and tight.
  After switch off, take the nobe to minimum value for next reading.
 The reading should be taken properly.
 Experiment no: 4

AIM: To determine Characteristics of TRIAC.

APPARATUS REQUIRED: TRIAC kit, Voltmeter, ammeter, Power supply.
THEORY:

The TRIAC is a three terminal semiconductor device for controlling current. It gains its
name from the term TRIode for Alternating Current. It is effectively a development of
the SCR or thyristor, but unlike the thyristor which is only able to conduct in one
direction, the TRIAC is a bidirectional device.

TRIACs are notorious for not firing symmetrically. This means these usually won’t trigger
at the exact same gate voltage level for one polarity as for the other. Generally
speaking, this is undesirable, because unsymmetrical firing results in a current waveform
with a greater variety of harmonic frequencies. Waveforms that are symmetrical above
and below their average centerlines are comprised of only odd-numbered harmonics.
Unsymmetrical waveforms, on the other hand, contain even-numbered harmonics
(which may or may not be accompanied by odd-numbered harmonics as well).
CIRCUIT DIAGRAM:
PROCEDURE:

OBSERVATION:
 GRAPH:

RESULT:
PRECAUTION:

  Switch on the power supply after proper connection.

  Do the connection properly and tight.
  After switch off, take the nobe to minimum value for next reading.
 The reading should be taken properly.
 Experiment no: 5

AIM: To study AC to DC half controlled converter.

APPARATUS REQUIRED: Converter kit, Power supply, connecting wires.

Theory: In the period 0 < tπ/ω; the SCR is forward biased. Then current through the
Load and voltage drop across the load are zero, and all the supply voltage appears
Between the anode and cathode of the SCR. Let the SCR be triggered at an angle of α
(0<α<π).Then the supply terminals are connected to the load through the SCR and the
Current starts flowing through the load via SCR. Therefore the supply appears across the
Load with a drop of R and the voltage drop across the SCR is zero (SCR is assumed
Ideal).In the period π<t<2π; the SCR is Reversed biased and the SCR cannot conduct. The
Voltage drop across the load is zero and the total supply voltage appears the SCR. Again
During the third positive Half cycle supply is positive again SCR is forward biased and if
We give triggering SCR starts conducting and this cycle repeats.

CIRCUIT DIAGRAM:

PROCEDURE:

1. Connect the circuit as shown in the circuit diagram

2. Give the firing pulses accordingly at a suitable firing angle from the firing circuit
3. Observe the load voltage on the CRO and note down the firing angle.
4. Draw the waveforms and calculate the Average and RMS value of output voltage
 OBSERVATION TABLE:

GRAPH:

PRECAUTION:

  Switch on the power supply after proper connection.

  Do the connection properly and tight.
  After switch off, take the nobe to minimum value for next reading.
 The reading should be taken properly.
 EXPERIMENT NO: 6

AIM: To study the characteristics and to determine the breakdown voltage of a

zener diode.

APPARATUS REQUIRED
Zener Diode Kit, Ammeter, Voltmeter, Resistor, Connecting Wires.

THEORY:

A properly doped crystal diode, which has a sharp breakdown voltage, is known as zener
diode.

FORWARD BIAS:

On forward biasing, initially no current flows due to barrier potential. As the

applied potential increases, it exceeds the barrier potential at one value and the charge
carriers gain sufficient energy to cross the potential barrier and enter the other region.
the holes ,which are majority carriers in p-region, become minority carriers on entering
the N-regions and electrons, which are the majority carriers in the N-regions become
minority carriers on entering the P-region. This injection of minority carriers results
current, opposite to the direction of electron movement.
REVERSE BIAS:

When the reverse bias is applied due to majority carriers small amount of current (ie)
reverse saturation current flows across the junction. As the reverse bias is increased
to breakdown voltage, sudden rise in current takes place due to zener effect.

ZENER EFFECT:
Normally, PN junction of Zener Diode is heavily doped. Due to heavy doping the
depletion layer will be narrow. When the reverse bias is increased the potential across
the depletion layer is more. This exerts a force on the electrons in the outermost shell.
Because of this force the electrons are pulled away from the parent nuclei and become
free electrons. This ionization, which occurs due to electrostatic force of attraction, is
known as Zener effect. It results in large number of free carriers, which in turn increases
the reverse saturation current

PROCEDURE:
FORWARD BIAS:
1. Connect the circuit as per the circuit diagram.
2. Vary the power supply in such a way that the readings are taken in steps of 0.1V.
3. Note down the corresponding ammeter readings.
4. Plot the graph : Vf (vs) If.
5. Find the dynamic resistance r = δV / δI.

REVERSE BIAS:
1. Connect the circuit as per the diagram.
2. Vary the power supply in such a way that the readings are taken in steps of 0.5V.
3. Note down the corresponding Ammeter readings Ir.
4. Plot a graph between Vr & Ir
5. Find the dynamic resistance r = δV / δI.

RESULT:

Forward and Reverse bias characteristics of the zener diode was studied and
the values of the various parameters were found to be: Forward bias dynamic
resistance = ---------------------
Reverse bias dynamic resistance = ----------------------
The reverse Breakdown voltage = ----------------------
 Experiment no: 07
AIM: To determine the characteristic of Step-down choppers
APPARATUS REQUIRED: chopper kit, power supply, connection wires.
THEORY:

A chopper is a high speed on/off semiconductor switch. It connects source to load and
disconnects the load from source at a fast speed.

 Step Up or Boost converter.

 Step Down or Buck Converter.

In this converter Output Voltage is greater than input voltage. This is achieved by fast
switching of a semiconductor device. The increase in output voltage depends on the frequency
of switching (i.e.) depends on pulse given to the device. While switch is off the output voltage
almost same as input. While switch is ON mosfet is assumed as short hence current flow in a
shortest path so inductor gets energized, and in continues flow we get output voltage greater
than input

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in the circuit diagram
2. Give the firing pulses accordingly at a suitable firing angle from the firing circuit
3. Observe the load voltage on the CRO and note down the firing angle.
4. Plot the graph.
OBSERVATION:

GRAPH:

Result:

Precaution:

  switch on the power supply after proper connection.

  do the connection properly and tight.
  after switch off, take the nobe to minimum value for next reading.
 the reading should be taken properly
 Experiment no: 08
AIM: To determine the characteristic of Step-up choppers
APPARATUS REQUIRED: chopper kit, power supply, connection wires.
THEORY:
A chopper is a high speed on/off semiconductor switch. It connects source to load and
disconnects the load from source at a fast speed.

 Step Up or Boost converter.

 Step Down or Buck Converter.

Step up chopper or boost converter is used to increase the input voltage level of its output side.
Its circuit diagram and waveforms .

CIRCUIT DIAGRAM:

PROCEDURE:
5. Connect the circuit as shown in the circuit diagram
6. Give the firing pulses accordingly at a suitable firing angle from the firing circuit
7. Observe the load voltage on the CRO and note down the firing angle.
8. Plot the graph.
OBSERVATION:

GRAPH:
Result:

Precaution:

  switch on the power supply after proper connection.

  do the connection properly and tight.
  after switch off, take the nobe to minimum value for next reading.
 the reading should be taken properly