Name: Jenica Reizl L. Sabanal Yr.

& Section: BSCPE 2-G

Subject: Fundamentals of Electronic Circuits

The FET Transistor

A Field Effect Transistor (FET) is a three-terminal semiconductor device. Its operation is
based on a controlled input voltage. It controls the form and thus the conductivity of the charge
carrier in a semiconductor through an electric field. As they undergo an operation of a single-
carrier type these FET transistors are also called unipolar transistors. All the forms of FET have
high input impedance. The input current regulates the conductivity of a non-FET transistor and
thus is low in the input impedance. A field-effect transistor’s terminals have applied a voltage
through which conductivity is regulated. The voltage that was applied to the gate creates an
electric field in the device which causes repulsion and attraction to charges that are carried amid
the two terminals. The conductivity is also affected due to the density of those charge carriers.
There are two types of Field Effect Transistors:
➢ Junction Field Effect Transistor (JFET)
➢ Metal oxide semiconductor Field Effect Transistor (MOSFET)
Junction Field Effect Transistor (JFET)
JFET or Junction Field Effect Transistor is a
unipolar current-controlled semiconductor device
available in N-channel and P-channel configurations
with three terminals: Source, Drain, and Gate. JFETs
are commonly used as switches and amplifiers. JFET
or Junction Field Effect Transistor is one of the
simplest types of field-effect transistor. Contrary to
the Bipolar Junction Transistor, JFETs are voltage-
controlled devices. In JFET, the current flow is due to
the majority of charge carriers. However, in BJTs, the
current flow is due to both minority and majority charge carriers. Since only the majority of charge
carriers are responsible for the current flow, JFETs are unidirectional.
Depending on the source of current flow, JFETs are classified into two types as
follows:
➢ n-channel JFET
➢ p-channel JFET
The classification is based on whether the current flow is due to electrons or holes.

n-channel p-channel
Name: Jenica Reizl L. Sabanal Yr. & Section: BSCPE 2-G
Subject: Fundamentals of Electronic Circuits

In an N-channel JFET, the material is of P-type,

and the substrate is N-type, while in a P channel JFET the
material is of N-type, and the substrate used is p-type.
JFET is made of a long channel of semiconductor
material. Ohmic contacts are provided at each end of the
semiconductor channels to form source and drain
connections. A P-type JFET contains many positive
charges, and if the JFET contains a large number of
electrons, it is called an N-type JFET.
Let us understand the working of JFET by
comparing it to a garden hose pipe. Water flows
smoothly through a garden hose pipe if there is no
obstruction, but if we squeeze the pipe slightly, the
water flow slows down. This is precisely how a JFET
works. Here the hose is analogous to JFET, and the
water flow is equivalent to a current. By constructing
the current carrying-channel according to our
needs, we could control the current flow.
When no voltage is applied across the source
and gate, the channel is a smooth path for the
electrons to flow through. When the polarity that
makes the P-N junction reverse biased is applied, the
channel narrows by increasing the depletion layer and
could put the JFET in the cut-off or pinch-off region.
The image shows the depletion region becoming wider
and narrower during the saturation and the pinch-off
mode.
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a
semiconductor device that is widely used for switching purposes and for the amplification of
electronic signals in electronic devices. A MOSFET is either a core or integrated circuit where it
is designed and fabricated in a single chip because the device is available in very small sizes. The
introduction of the MOSFET device has brought a change in the domain of switching in
electronics. MOSFET were invented to overcome the disadvantages posed by FETs, such as the
slow operation, high drain resistance, and moderate input impedance.
MOSFETs feature three pins - Source, Gate and Drain. They effectively control the
electrical current flowing between the Source and Drain contacts, with voltage being applied via
the Gate. You can prompt the appearance or disappearance of an electrical channel by altering the
electrical voltage. This enables the electrical device to be switched on or off. The use of a
semiconductor allows for the separation of different impurity varieties. This means that charges
of different signs can be effectively isolated, and barriers can be created, preventing the flow of
charge from one region to the next.
Name: Jenica Reizl L. Sabanal Yr. & Section: BSCPE 2-G
Subject: Fundamentals of Electronic Circuits

➢ The p-type semiconductor forms the base of

the MOSFET.
➢ The two types of the base are highly doped
with an n-type impurity which is marked as n+
in the diagram.
➢ From the heavily doped regions of the base,
the terminals source and drain originate.
➢ The layer of the substrate is coated with a layer
of silicon dioxide for insulation.
➢ A thin insulated metallic plate is kept on top of the silicon dioxide and it acts as a capacitor.
➢ The gate terminal is brought out from the thin metallic plate.
➢ A DC circuit is then formed by connecting a voltage source between these two n-type
regions.
A MOSFET can function in two ways: Depletion Mode and Enhancement Mode

Depletion Mode
When there is no voltage across the gate
terminal, the channel shows its maximum
conductance. Whereas when the voltage across the
gate terminal is either positive or negative, then the
channel conductivity decreases.
Enhancement Mode
When there is no voltage across the gate
terminal, then the device does not conduct. When
there is the maximum voltage across the gate
terminal, then the device shows enhanced
conductivity.
The main principle of the MOSFET device is to be able to control the voltage and current
flow between the source and drain terminals. It works almost like a switch and the functionality
of the device is based on the MOS capacitor. The MOS capacitor is the main part of MOSFET. The
semiconductor surface at the below oxide layer which is located between the source and drain
terminal can be inverted from p-type to n-type by the application of either a positive or negative
gate voltage respectively. When we apply a repulsive force for the positive gate voltage, then the
holes present beneath the oxide layer are pushed downward with the substrate.
The depletion region populated by the bound negative charges which are associated with
the acceptor atoms. When electrons are reached, a channel is developed. The positive voltage also
attracts electrons from the n+ source and drain regions into the channel. Now, if a voltage is
applied between the drain and source, the current flows freely between the source and drain and
the gate voltage controls the electrons in the channel. Instead of the positive voltage, if we apply
a negative voltage, a hole channel will be formed under the oxide layer.
Name: Jenica Reizl L. Sabanal Yr. & Section: BSCPE 2-G
Subject: Fundamentals of Electronic Circuits

P-Channel MOSFET
The P- channel MOSFET has a P- Channel
region located in between the source and drain
terminals. It is a four-terminal device having the
terminals as gate, drain, source, and body. The
drain and source are heavily doped p+ region and
the body or substrate is of n-type. The flow of
current is in the direction of positively charged Depletion Mode
holes.
When we apply the negative voltage with
repulsive force at the gate terminal, then the electrons
present under the oxide layer are pushed downwards
into the substrate. The depletion region populated by
the bound positive charges which are associated with
the donor atoms. The negative gate voltage also attracts
holes from the p+ source and drain region into the
channel region. Enhanced Mode

N- Channel MOSFET
The N-Channel MOSFET has an N- channel region Enhancement Mode
located in between the source and drain terminals. It is a
four-terminal device having the terminals as gate, drain,
source, body. In this type of Field Effect Transistor, the
drain and source are heavily doped n+ region and the
substrate or body are of P-type. The current flow in this
type of MOSFET happens because of negatively charged
electrons. When we apply the positive voltage with
repulsive force at the gate terminal then the holes present
under the oxide layer are pushed downward into the
substrate. The depletion region is populated by the bound negative charges which are associated
with the acceptor atoms.
Upon the reach of electrons, the channel is formed. The positive voltage also attracts
electrons from the n+ source and drain regions into the channel. Now, if a voltage is applied
between the drain and source the current flows freely between the source and drain and the gate
voltage controls the electrons in the channel. Instead of positive voltage if we apply negative
voltage then a hole channel will be formed under the oxide layer.
MOSFET Regions of Operation
Cut-off Region – It is the region where the device will be in the OFF condition and there
zero amount of current flow through it. Here, the device functions as a basic switch and is so
employed as when they are necessary to operate as electrical switches.
Saturation Region – In this region, the devices will have their drain to source current
value as constant without considering the enhancement in the voltage across the drain to source.
This happens only once when the voltage across the drain to source terminal increases more than
the pinch-off voltage value. In this scenario, the device functions as a closed switch where a
saturated level of current across the drain to source terminals flows. Due to this, the saturation
region is selected when the devices are supposed to perform switching.
Name: Jenica Reizl L. Sabanal Yr. & Section: BSCPE 2-G
Subject: Fundamentals of Electronic Circuits

Linear/Ohmic Region – It is the region where the current across the drain to source
terminal enhances with the increment in the voltage across the drain to source path. When the
MOSFET devices function in this linear region, they perform amplifier functionality.