Semiconductor KTA1273: Technical Data
Semiconductor KTA1273: Technical Data
Semiconductor KTA1273: Technical Data
A
P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
MAXIMUM RATING (Ta=25ᴱ) S
G
Q D 2.50 MAX
K E 1.15 MAX
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
R
G 1.70 MAX
Collector-Base Voltage VCBO -30 V F F H 0.55 MAX
J _ 0.50
14.00 +
Collector-Emitter Voltage VCEO -30 V H H H
K 0.35 MIN
L _ 0.10
0.75 +
Emitter-Base Voltage VEBO -5 V M E M M 4
N 25
Collector Current IC -2 A O 1.25
D
1 2 3 L
H
O
P Φ1.50
I C - VCE h FE - I C
-1600 1k
-10 COMMON
COLLECTOR CURRENT I C (mA)
DC CURRENT GAIN h FE
-8 Ta=25 C Ta=100 C
300
-1200 Ta=25 C
-6
-1000 Ta=-25 C
-4 100
-800
-3 50
-600
-2 30
-400 VCE =-2V
I B =-1mA
-200 10
0 -1 -3 -10 -30 -100 -300 -1k -3k
0
0 -2 -4 -6 -8 -10 -12 -14 -16 COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - V BE
-1600
VCE(sat) - I C COMMON
COLLECTOR CURRENT I C (mA)
-1400 EMITTER
-5
COLLECTOR-EMITTER SATURATION
VCE =-2V
-3 COMMON -1200
EMITTER
I C /I B =50 -1000
VOLTAGE VCE(sat) (V)
-1
Ta=-25 C
Ta=25 C
-800
Ta=100
-0.5
-0.3 -600
Ta=100 C
Ta=25 C -400
-0.1
-200
-0.05 Ta=-25 C
-0.03 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.6 -1.8
-0.01 BASE-EMITTER VOLTAGE VBE (V)
-1 -3 -10 -30 -100 -300 -1k -3k
-3 * 10 m
0m S
S
COLLECTOR CURRENT I C (A)
I C MAX(CONTINUOUS) S
1.2 * *
COLLECTOR POWER DISSIPATION
*
1s
DC
1.0 -1 OP *
ER
AT
-0.5 I ON
0.8 Ta
-0.3 =2
5
PC (W)
C
0.6
-0.1
VCEO MAX.
0.4
* SINGLE NONREPETITIVE
PULSE Ta=25 C
-0.05 CURVES MUST BE DERATED
0.2
-0.03 LINEARLY WITH INCREASE
IN TEMPERATURE
0
0 20 40 60 80 100 120 140 160 180 -0.3 -0.5 -1 -3 -5 -10 -30 -50
www.datasheetcatalog.com