Semiconductor KTA1273: Technical Data

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SEMICONDUCTOR KTA1273

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

HIGH CURRENT APPLICATION.


B D
FEATURES
ᴌComplementary to KTC3205.

A
P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
MAXIMUM RATING (Ta=25ᴱ) S

G
Q D 2.50 MAX
K E 1.15 MAX
CHARACTERISTIC SYMBOL RATING UNIT F 1.27

R
G 1.70 MAX
Collector-Base Voltage VCBO -30 V F F H 0.55 MAX
J _ 0.50
14.00 +
Collector-Emitter Voltage VCEO -30 V H H H
K 0.35 MIN
L _ 0.10
0.75 +
Emitter-Base Voltage VEBO -5 V M E M M 4
N 25
Collector Current IC -2 A O 1.25

D
1 2 3 L
H

O
P Φ1.50

Emitter Current IE 2 A N N Q 0.10 MAX


_ 0.50
R 12.50 +
1. EMITTER
S 1.00
Collector Power Dissipation PC 1 W 2. COLLECTOR

Junction Temperature Tj 150 ᴱ 3. BASE

Storage Temperature Range Tstg -55ᴕ150 ᴱ


TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5 - - V
DC Current Gain hFE (Note) VCE=-2V, IC=-500mA 100 - 320
Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-0.03A - - -2.0 V
Base-Emitter Voltage VBE VCE=-2V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-2V, IC=-500mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 48 - pF
Note : hFE Classification 0:100ᴕ200, Y:160ᴕ320

1996. 9. 14 Revision No : 1 1/2


KTA1273

I C - VCE h FE - I C
-1600 1k
-10 COMMON
COLLECTOR CURRENT I C (mA)

-1400 EMITTER 500

DC CURRENT GAIN h FE
-8 Ta=25 C Ta=100 C
300
-1200 Ta=25 C
-6
-1000 Ta=-25 C
-4 100
-800
-3 50
-600
-2 30
-400 VCE =-2V
I B =-1mA
-200 10
0 -1 -3 -10 -30 -100 -300 -1k -3k
0
0 -2 -4 -6 -8 -10 -12 -14 -16 COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)

I C - V BE
-1600
VCE(sat) - I C COMMON
COLLECTOR CURRENT I C (mA)

-1400 EMITTER
-5
COLLECTOR-EMITTER SATURATION

VCE =-2V
-3 COMMON -1200
EMITTER
I C /I B =50 -1000
VOLTAGE VCE(sat) (V)

-1

Ta=-25 C
Ta=25 C
-800

Ta=100
-0.5
-0.3 -600
Ta=100 C
Ta=25 C -400
-0.1
-200
-0.05 Ta=-25 C
-0.03 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.6 -1.8
-0.01 BASE-EMITTER VOLTAGE VBE (V)
-1 -3 -10 -30 -100 -300 -1k -3k

COLLECTOR CURRENT IC (mA)

AREA OF SAFE OPERATION


-5
10
Pc - Ta I C MAX(PULSED)
1m

-3 * 10 m
0m S
S
COLLECTOR CURRENT I C (A)

I C MAX(CONTINUOUS) S
1.2 * *
COLLECTOR POWER DISSIPATION

*
1s

DC
1.0 -1 OP *
ER
AT
-0.5 I ON
0.8 Ta
-0.3 =2
5
PC (W)

C
0.6

-0.1
VCEO MAX.

0.4
* SINGLE NONREPETITIVE
PULSE Ta=25 C
-0.05 CURVES MUST BE DERATED
0.2
-0.03 LINEARLY WITH INCREASE
IN TEMPERATURE
0
0 20 40 60 80 100 120 140 160 180 -0.3 -0.5 -1 -3 -5 -10 -30 -50

AMBIENT TEMPERATURE Ta ( C) COLLECTOR EMITTER VOLTAGE VCE (V)

1996. 9. 14 Revision No : 1 2/2


This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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