RT1N436C TP 1
RT1N436C TP 1
RT1N436C TP 1
Transistor
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT1N436X is a one chip transistor with built-in bias resistor,PNP type is RT1P436X. RT1N436U
1.6
OUTLINE
DRAWING
RT1N436C
2.5
UNITmm
FEATURE
Built-in bias resistor (R1=4.7k,R2=47k). www.DataSheet4U.com
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
0.95
2.9 1.90
1.6 1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit, driver circuit.
0.7 0.15 1.1 0.55 0.8 0.16
00.1
R1 B (IN) R2
C (OUT)
E (GND)
RT1N436M RT1N436T2
0.425 1.21 0.2 0.81 0.2 0.65 0.3 1.0 2.1 1.25 0.425 3.0
RT1N436S
4.0
00.1
Equivalent circuit
0.95
0.5
0.1 0.45
0.25
2.0 1.3
1.21 0.8
0.4
0.65
0.4
14.0
1.0
0.5
0.7
00.1
0.4
SERIES
MAXIMUM RATING (Ta=25)
SYMBOL www.DataSheet4U.com PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature RT1N436T2 RT1N436U RATING RT1N436M 50 6 50 100 200
Transistor
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
RT1N436C
RT1N436S
UNIT V V V mA mA mW
150
450
TEST CONDITION I C=100ARBE= VCB=50VI E =0 VCE=5VI C =10mA I C =10mAI B =0.5mA VCE=0.2VI C =5mA VCE=5VI C =100A
MIN 50 80
LIMIT TYP
UNIT V A V V V k MHz
0.4 3.3 8
VCE=6VI
=-10mA
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA GE V S. C OL L EC TOR C U R R EN T D C F OR W A R D C U R R EN T G A IN V S. C OL L EC TOR C U R R EN T
10
DC FORWARD CURRENT GAIN INPUT ON VOLTEGEI(ON)
100
1000
COLLECTOR CURRENT
VCE=5V
100
www.DataSheet4U.com
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June.2008