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    IXTH13N110

    Uploaded by

    Morteza Jafarzadeh
    This document provides specifications and characteristics for an N-Channel Enhancement Mode MOSFET. It includes maximum ratings, characteristic values, and diagrams of the device package. The MOSFET has a low RDS(on) and is intended for use in applications like power supplies, motor controls, and DC choppers.

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    © All Rights Reserved
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    IXTH13N110

    Uploaded by

    Morteza Jafarzadeh
    23 views3 pages
    This document provides specifications and characteristics for an N-Channel Enhancement Mode MOSFET. It includes maximum ratings, characteristic values, and diagrams of the device package. The MOSFET has a low RDS(on) and is intended for use in applications like power supplies, motor controls, and DC choppers.

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    © © All Rights Reserved

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    This document provides specifications and characteristics for an N-Channel Enhancement Mode MOSFET. It includes maximum ratings, characteristic values, and diagrams of the device package. The MOSFET has a low RDS(on) and is intended for use in applications like power supplies, motor controls, and DC choppers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views3 pages

    IXTH13N110

    Uploaded by

    Morteza Jafarzadeh
    This document provides specifications and characteristics for an N-Channel Enhancement Mode MOSFET. It includes maximum ratings, characteristic values, and diagrams of the device package. The MOSFET has a low RDS(on) and is intended for use in applications like power supplies, motor controls, and DC choppers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    IXTH 13N110 VDSS = 1100 V

    MegaMOSTMFET ID25 = 13 A
    RDS(on) = 0.92 Ω
    N-Channel Enhancement Mode

    Symbol Test Conditions Maximum Ratings TO-247 AD

    VDSS TJ = 25°C to 150°C 1100 V


    VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1100 V
    VGS Continuous ±20 V D (TAB)
    VGSM Transient ±30 V
    ID25 TC = 25°C 13 A
    G = Gate, D = Drain,
    IDM TC = 25°C, pulse width limited by TJM 52 A S = Source, TAB = Drain
    PD TC = 25°C 360 W
    TJ -55 ... +150 °C
    TJM 150 °C
    T stg -55 ... +150 °C
    Md Mounting torque 1.13/10 Nm/lb.in.
    Weight 6 g
    Maximum lead temperature for soldering 300 °C
    1.6 mm (0.062 in.) from case for 10 s Features

    l International standard package


    JEDEC TO-247 AD
    l Low RDS (on) HDMOSTM process
    l Rugged polysilicon gate cell structure
    l Fast switching times

    Applications
    Symbol Test Conditions Characteristic Values
    (TJ = 25°C, unless otherwise specified) l Switch-mode and resonant-mode
    min. typ. max.
    power supplies
    l Motor controls
    VDSS VGS = 0 V, ID = 3 mA 1100 V l Uninterruptible Power Supplies (UPS)
    VGS(th) VDS = VGS, ID = 250 µA 2 4.5 V l DC choppers

    IGSS VGS = ±20 VDC, VDS = 0 ±100 nA


    Advantages
    IDSS VDS = 0.8 • VDSS TJ = 25°C 500 µA
    VGS = 0 V TJ = 125°C 3 mA l Easy to mount with 1 screw
    (isolated mounting screw hole)
    R DS(on) VGS = 10 V, ID = 0.5 • ID25 0.80 0.92 Ω l Space savings
    Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l High power density

    IXYS reserves the right to change limits, test conditions, and dimensions. 92781F (3/98)

    © 2000 IXYS All rights reserved 1-2


    IXTH 13N110

    Symbol Test Conditions Characteristic Values


    (TJ = 25°C, unless otherwise specified) TO-247 AD Outline
    min. typ. max.

    gfs VDS = 10 V; ID = 6.5 A, pulse test 10 S

    C iss 5650 pF 1 2 3

    C oss VGS = 0 V, VDS = 25 V, f = 1 MHz 400 pF


    C rss 150 pF

    t d(on) 24 ns
    tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 21 ns
    td(off) RG = 1 Ω, (External) 80 ns Terminals: 1 - Gate 2 - Drain
    3 - Source Tab - Drain
    tf 36 ns
    Dim. Millimeter Inches
    Min. Max. Min. Max.
    Q g(on) 195 nC
    A 4.7 5.3 .185 .209
    Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 28 nC A1 2.2 2.54 .087 .102
    A2 2.2 2.6 .059 .098
    Q gd 85 nC b 1.0 1.4 .040 .055
    b1 1.65 2.13 .065 .084
    R thJC 0.35 K/W b2 2.87 3.12 .113 .123
    C .4 .8 .016 .031
    R thCK 0.25 K/W D 20.80 21.46 .819 .845
    E 15.75 16.26 .610 .640
    e 5.20 5.72 0.205 0.225
    L 19.81 20.32 .780 .800
    L1 4.50 .177
    Source-Drain Diode Characteristic Values
    ∅ P 3.55 3.65 .140 .144
    (TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
    Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
    S 6.15 BSC 242 BSC
    IS VGS = 0 V 13 A

    ISM Repetitive; pulse width limited by TJM 52 A

    VSD IF = IS, VGS = 0 V, 1.5 V


    Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

    t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 850 ns

    © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
    4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
    2-2
    4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
    Mouser Electronics

    Authorized Distributor

    Click to View Pricing, Inventory, Delivery & Lifecycle Information:

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    IXTH13N110

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