PolarHVTM HiPerFET IXFH 44N50P VDSS = 500 V

Power MOSFET IXFK 44N50P ID25 = 44 A

IXFT 44N50P RDS(on) ≤ 140 mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
trr ≤ 200 ns
Fast Intrinsic Diode

TO-247 AD (IXFH)
Symbol Test Conditions Maximum Ratings

VDSS TJ = 25° C to 175° C 500 V

VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 500 V

VGSM Transient ±40 V

VGSM Continuous ±30 V (TAB)

ID25 TC = 25° C 44 A
IDM TC = 25° C, pulse width limited by TJM 110 A TO-264 (IXFK)
IAR TC = 25° C 44 A
EAR TC = 25° C 55 mJ
EAS TC = 25° C 1.7 J
G
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns D
S (TAB)
TJ ≤150° C, RG = 10 Ω
PD TC = 25° C 650 W
TO-268 (IXFT)
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
G
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C S
TSOLD Plastic case for 10 s 260 °C
(TAB)
Md Mounting torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g G = Gate D = Drain

TO-268 5 g S = Source TAB = Drain
TO-264 10 g

Features

Symbol Test Conditions Characteristic Values l

International standard packages
(TJ = 25° C, unless otherwise specified) Min. Typ. Max. l
Unclamped Inductive Switching (UIS)
BVDSS VGS = 0 V, ID = 250 µA 500 V rated
l
Low package inductance
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V - easy to drive and to protect
IGSS VGS = ±30 VDC, VDS = 0 ±10 nA
Advantages
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125° C 500 µA l
Easy to mount
l
RDS(on) VGS = 10 V, ID = 0.5 ID25 140 mΩ Space savings
l
Pulse test, t ≤300 µs, duty cycle d ≤ 2 % High power density

© 2006 IXYS All rights reserved DS99366E(03/06)

 IXFH44N50P IXFK 44N50P
IXFT 44N50P

Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline

(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, pulse test 20 32 S

Ciss 5440 pF
1 2 3
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 639 pF
Crss 40 pF

td(on) 28 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 29 ns
td(off) RG = 3 Ω (External) 85 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
tf 27 ns
Dim. Millimeter Inches
Qg(on) 98 nC Min. Max. Min. Max.
A 4.7 5.3 .185 .209
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgd 30 nC
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
RthJC 0.19° C/W b2 2.87 3.12 .113 .123
RthCS (TO-247) 0.21 ° C/W C .4 .8 .016 .031
D 20.80 21.46 .819 .845
(TO-264) 0.15 ° C/W
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
Source-Drain Diode Characteristic Values L 19.81 20.32 .780 .800
(TJ = 25° C, unless otherwise specified) L1 4.50 .177
Symbol Test Conditions Min. Typ. Max. ∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
IS VGS = 0 V 44 A R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
ISM Repetitive 110 A
TO-268 (IXFT) Outline
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 25 A, -di/dt = 100 A/µs 200 ns

QRM VR = 100V, VGS = 0 V 0.6 µC
IRM 6.0 A

TO-264 (IXFK) Outline

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXFH44N50P IXFK 44N50P
IXFT 44N50P
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
45 100
V GS = 10V V GS = 10V
40 7V 90
8V
80
35
70
30
I D - Amperes

I D - Amperes
7V
60
25
6V
50
20
40
6V
15
30
10
20
5V
5 10
5V
0 0
0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30
V DS - Volts V DS - Volts

Fig. 3. Output Characteristics Fig. 4. R DS(on) Normalized to ID = 22A Value

@ 125ºC v s. Junction Temperature
45 3.2
V GS = 10V V GS = 10V
40 7V
2.8
35
R DS(on) - Normalized

2.4
30 6V
I D - Amperes

25 2 I D = 44A

20 1.6 I D = 22A

15
5V
1.2
10
0.8
5

0 0.4
0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
V DS - Volts T J - Degrees Centigrade

Fig. 5. R DS(on) Normalized to ID = 22A Value Fig. 6. Maximum Drain Current v s.

vs. Drain Current Case Temperature
3.2
50
3.0 V GS = 10V
45
2.8
TJ = 125ºC
2.6 40
R DS(on) - Normalized

2.4 35
I D - Amperes

2.2 30

2.0 25
1.8
20
1.6
15
1.4
TJ = 25ºC 10
1.2
5
1.0
0
0.8
-50 -25 0 25 50 75 100 125 150
0 10 20 30 40 50 60 70 80 90 100
T C - Degrees Centigrade
I D - Amperes

© 2006 IXYS All rights reserved

 IXFH44N50P IXFK 44N50P
IXFT 44N50P

Fig. 7. Input Admittance Fig. 8. Transconductance

65 60
60 55
55 50
50
45
45 TJ = - 40ºC
40

g f s - Siemens
I D - Amperes

40 25ºC
35 125ºC
35
30
30
TJ = 125ºC 25
25
25ºC
20
20 - 40ºC
15 15

10 10

5 5
0 0
3.5 4 4.5 5 5.5 6 6.5 0 10 20 30 40 50 60 70
V GS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
140 10

9 V DS = 250V
120 I D = 22A
8
I G = 10mA
100 7
I S - Amperes

V GS - Volts

6
80
5
60 TJ = 125ºC
4

40 TJ = 25ºC 3

2
20
1

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 40 50 60 70 80 90 100
V SD - Volts Q G - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

10,000 1,000
TJ = 150ºC
C iss TC = 25ºC
Capacitance - PicoFarads

RDS(on) Limit
1,000 100
I D - Amperes

C oss 25µs

100µs

100 10
1ms

DC 10ms
C rss
f = 1 MHz

10 1
0 5 10 15 20 25 30 35 40 10 100 1000
V DS - Volts V DS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXFH44N50P IXFK 44N50P
IXFT 44N50P

Fig. 13. Maximum Transient Thermal Resistance

1.00
R (th)JC - ºC / W

0.10

0.01
0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds

© 2006 IXYS All rights reserved IXYS REF: T_44N50P (8J) 03-21-06-B.xls