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K2717

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Heraclio Camacho Ulloa
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49 views5 pages

K2717

Uploaded by

Heraclio Camacho Ulloa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF or read online on Scribd
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TOSHIBA 2SK2717 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (x-MOSIII) 2S8SK2717 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS iota, $3202 aye © Low Drain-Source ON Resistance: Rpg (N)=2.300 (Typ.) 3 © High Forward Transfer Admittance : [Yg|=4.48 (Typ.) SSEE © Low Leakage Current : Ipgg=100/.A (Max.) (Vpg=720V) 4 2 ¢ Enhancement-Mode — : Vi, =2.0~4.0V (Vpg=10V, Ip=1mA) MAXIMUM RATINGS (Ta =25°C) CHARACTERISTIC symgo. | RATING | UNIT Drain-Source Voltage VDSS 900 Vv Drain-Gate Voltage (Rqg=20k) | _VpaR. 900 Vv Gate-Souree Voltage Vass £30 Vv Ip 5 Drain Current we iz A Drain Power Dissipation (Te=25°0) | Pp 5 W ‘Single Pulse Avalanche Energy™* | EAS 595 ind ‘Avalanche Current TAR 5 A Repetitive Avalanche Energy* EAR a5. mad Channel ‘Temperature Toh, 150 °C_|[TOSHIBA _2-10R1B Storage Temperature Range Taig =85=150 | *C_| Weight : 19¢ (typ) ‘THERMAL CHARACTERISTICS CHARACTERISTIC syMBoL |MAX.| UNIT [Thermal Resistance, Channel to Case Rin(che) | 278[C7W Thermal Resistance, Channel to Ambient [Rth (cha) | 62.5|°C/W. Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Ty,=25°C, L=43.6mH, Rg=250, IgR=5A This transistor is an electrostatic sensitive device. Please handle with caution. 961001 © TOHaA F copnaly wornp fo, mera the Gualty and the Tlahiny of & piwiuce_ Newerthaee cemiandumor davcer general can HUTGR arducte 10 Sesare andar of tet. and'to stoi auadont im ch & matoncton of fol of 2 FOShiea prod cud atte 1 of humor ebay ‘nur oF mage to prope in developing Jour cespr, plea ersue thar TOSKBA.prosutae. eed win specie pera ranger a at finn the ort rare pods spechetons As, ane Keep mind te precautions a condone on he SBSRURsemonducorReisbiry Mandbooe © ConcG ATEN far ap nirgernents of alsa fapery she it the Bes ps tay esl he He ue: No Boone's Grated © TheTntomation contained herein & subject to change wihout nove oe 1998-11-12 15 TOSHIBA 2SK2717 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION man. | Typ. |Max.| unrr] (Gate Leakage Current Tass __|Vas==30V, Vpg=0V — = se Gaon BRskaows Vy gagfig= 0p, pg=OV vo) —]-|v Drain Cutoff Current Tpss __|Vps=720V, Vag=0V = | = [100 | a Drain-Source Breakdown Voltage 'V (pry Dss|Ip=10mA, Vag=0V so} — | — |v (Gate Threshold Voltage Vin mA 20; — | 40| Vv Drain-Source ON Resistance [RDS (ON) 08 — | 23 [ 25[ a Forward Transfer Forward Te 1¥eal 0A. ai} 44] — |] s Tnput Capacitance Gis = [i200 | — Reverse Transfer ov Capacitance Cres —| *|- | (Output Capacitance Coss = [a0 = Rise Time te 10v Ip=3A, — | 4] — VGS oy ‘Turn-on Time | ton = — | 9] — Switching ‘or g Time 5 as Fall Time te — | «| — Vpp=200V oft Tim: VIN : te, te : 3 N 3 B aod pa i Hi i 3 rao user Ee ab 8 | a Cr) ea Te DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (0) " DyNaMie INpur/ourPut Pp =e CHARASTENISMICS : =“ loomor oun é s (ex & £ 8 i z : i i i : d : i i i Cage TxeRATURE. Te co TOTAL GATE CHARGE Oy 60) 1998-11-12 4/5 TOSHIBA 5 i THDEDANCE nunca Rani, i 1007 SAFE OPERATING AREA Ip MAX. PULSE) © 109 Ip MAK. CONTINUOUS) . s z DG OPERATION B gs Tee2ee 5 br axcus SORE eer oa] PULSE Te Vs MAK Aiary"wihInceeae In a 309067 DRAINSOURCE VOLTAGE Vps «W) SINGLE PULSE 2SK2717 Ragicey® 26°07 1s 100% T 70 PULSE WIDTH ty Hoo 000 Eas - Tech ee Bypss wy cw JL ; ‘Test CIRCUIT WAVE FORM Peak IAR=5A, RG=250 pag 1 yy, BYDSS_ Vop=90¥, L248 oat 2 Bypss- Vop 1998-11-12 5/5

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