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Team Hubble

This document discusses advancements in transistors between 1990-2000. Some key developments include the discovery of carbon nanotubes in 1991, which enabled new applications in semiconductors. In 1993, Nichia Corporation developed the first practical blue LED, enabling full-color displays. Microprocessor transistor counts continued increasing through the decade as manufacturing processes improved to smaller sizes. Applications explored the use of transistors in space, such as for plant growth lighting using LEDs and for communication in space exploration using microprocessors.

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Anagha MA
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0% found this document useful (0 votes)
45 views

Team Hubble

This document discusses advancements in transistors between 1990-2000. Some key developments include the discovery of carbon nanotubes in 1991, which enabled new applications in semiconductors. In 1993, Nichia Corporation developed the first practical blue LED, enabling full-color displays. Microprocessor transistor counts continued increasing through the decade as manufacturing processes improved to smaller sizes. Applications explored the use of transistors in space, such as for plant growth lighting using LEDs and for communication in space exploration using microprocessors.

Uploaded by

Anagha MA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Department of Electronics and Communication Engineering,

The National Institute of Engineering,


Mysuru (NIE Mysuru)- 570008

The Development of Transistors(1990-2000)

Name of Team members and college email id:


1.Archana K – 4NI21EC019 (2021ec_archanak_a@nie.ac.in )
2.Anagha.M.A – 4NI21EC011 (2021ec_anaghama_a@nie.ac.in )
3.Arnav Krishna Prasad – 4NI21EC020 (2021ec_arnavkrishnaprasad_a@nie.ac.in )
4.Bipin Kumar – 4NII21EC029 (2021ec_bipinkumar_a@nie.ac.in )
5.C Sai prerana - 4NI21EC030(2021ec_csaiprerana_a@nie.ac.in )
6.Chethan K C - 4NI21EC036 (2021ec_chethankc_a@nie.ac.in )
7.Devyani Gondavale – 4NI21EC040 (2021ec_devyanigondavale_a@nie.ac.in )
8.Manish K P - 4NI21EC056 (2021ec_manishkp_a@nie.ac.in )
9.Meghana P - 4NI21EC060 (2021ec_meghanap_a@nie.ac.in )
10.Farzan Fayaz Ganai - 4NI21EC123 (2021EC_FARZANFAYAZGANAI_A@NIE.AC.IN )
11.Nisar Ahmad Reshi - 2022LEC001(2022lece_nizarahmadreshi_a@nie.ac.in )

Batch: 2021-2022

College Name: The National Institute of Engineering

Name of Team Leader: Archana k


Name of Team: Hubble
Time frame Selected: 1990 – 2000
Application Area: Space

Dr. Remya Jayachandran


Assignment 1 Assistant Professor, 21EC3C03: Analog Electronics
ECED, NIE, Mysuru
2022-‘23
1

TRANSISTORS
ABSTRACT:-

Transistor, when your brain gets hit by the this word ‘TRANSISTOR’, what
your brain gonna think, if you are a common person you maybe clueless or
maybe not be in interested in that thing or you may say ‘The thing that
changed the entire world’. if you are an tech geek, you may already have some
sort of idea about transistor, probably you maybe in interested in learning
more about that. Leave it for a moment .
Today Transistor has become heart of human activities, say from child to an
adult ,without smartphones they can’t even breath and for couples, it will be
an nightmare and for people who are in long distant relationship, it’s going to
be an hell, forget all about that ,if you are reading this passage, it’sbecause of
transistor and what we are typing ,that special thing has some role behind this
all process.
If you belongs to that ‘TECH GEEK’, allow your curious mind to
explore some histories and breakthroughs in transistors, so let’s dig in … ..
Keywords:-Carbon nanotubes(CNs),light emitting diode (LED),gallium aluminum arsenide (GaAlAs) ,

Microprocessors,SVEC

Introduction:-

THE DEVELOPMENT OF TRANSISTOR (1991-2000)

Spurred by a dramatic thaw in international relations, the world became a


much closer and more intimate place during the 1990s. The cold war
stumbled to a dramatic end in 1991. After this great expansion in computers,
semiconductors and telecommunication industry took place. Silicon
semiconductors emerged leading to war in semiconductor industry in 1990s
between Korean, Japanese and Taiwanese.
Many devices were created in the 1990s decade,further are the listings of some
of the devices discovered, invented and used; the following are:
Team HUBBLE
2

CARBON NANOTUBE:

 The evolution of semiconductors can no longer be discussed


without referring to the advancement in nanotechnology. The
discovery of the carbon nanotube by Sumio Iijima in 1991 was a pivotal
event in this field.

 First carbon nanotube single-electron transistors (operating at


low temperature) are demonstrated by groups at Delft University
and UC Berkeley.

 Carbon nanotubes have many excellent properties, including over


1,000 times greater electric current density and 10 times better room-
temperature thermal conductivity than copper. That makes carbon
nanotubes a promising successor to silicon as semiconductor scaling
continues.

Team HUBBLE
3

PRACTICAL BLUE LED:

 Light-emitting diodes (LEDs) have been considered ideal for


making display panels, as they consume very small power to produce
light. The application required three primary colors (red, green, and
blue), however, and there had been no practical technology to
manufacture blue LED until 1993, when Nichia Corporation and Shuji
Nakamura developed the blue LED technology. Their achievement
made full color LED displays possible, as well as the blue laser
technology that enabled advanced DVD recorders and other
applications.
 LED devices fabricated with gallium aluminum arsenide (GaAlAs)
chips which have a high efficiency for converting electrical
energy to photosynthetically active radiation. Specific GaAlAs LEDs
are available that emit radiation with a peak wavelength near the
spectral peak of maximum quantum action for photosynthesis.
Advantages of LEDs over other electric light sources for use in
space systems include long life, minimal mass and volume and being a
solid state device.

Team HUBBLE
4
MICROPROSSESOR

Advancements were made in the field of microprocessor transistors


in 1990s:

Processo Transisto Date of Manufactur Process Area


r r er
introductio
count n
R4000 1,350,000 1991 MIPS 1.0 µm 213
mm²
Pentium 3,100,000 1993 Intel 0.8 µm 294
mm²
AMD K5 4,300,000 1996 AMD 0.5 µm 251
mm²
Pentium 5,500,000 1995 Intel 0.5 µm 307
mm²

Pentium 7,500,000 1997 Intel 0.35 µm 195


II mm²
AMD K6 8,800,000 1997 AMD 0.35 µm 162
mm²
Pentium 9,500,000 1999 Intel 0.25 µm 128
mm²
III
Team HUBBLE
APPLICATIONS OF TRANSISTORS IN SPACE 5

 Extraordinary properties of carbon nanotubes are being examined


for applications in advanced materials. This activity focuses on
developing this new technology for use in spaceflight.
 Light emitting diodes (LEDs) area promising irradiation source for
plant growth in space. Improved semiconductor technology has
yielded LED devices fabricated with gallium aluminum arsenide
(GaAlAs) chips which have a high efficiency for converting electrical
energy to
photosynthetically active radiation.
 One of NASA's Commercial Space Centers, the Space Vacuum Epitaxy
Center (SVEC), had a mission to create thin film semiconductor
materials and devices through the use of vacuum growth technologies.
In
partnership with Johnson Space Center, researchers spent years in the
lab where they advanced a technique called molecular beam epitaxy. In
1997, researchers from the SVEC formed a company called Applied
Optoelectronics Inc., of Sugar Land, Texas, to fabricate devices using
the advanced techniques and knowledge. Today, the company develops
and manufactures optical devices for fiber optic networks including
cable
television, wireless, telecommunications, data communications, and
fiber- to-the-home applications.
 Microprossesor (Pentium, AMD K5, AMD K6 etc) are used
for communication and others process during space
exploration

TRANSISTORS (with references):


 T.-S. and P.-S. Lin, “On the Pseudo-Subthreshold Characteristics
of Polycrystalline-Silicon Thin-Film Transistors with Large Grain Size,”
IEEE Elec. Dev. Let., Vol. 14, No. 5,pp.240-242, May 1993.
 M.Hack and J.G.Shaw,” Amorphous and Polysilicon Device
Simulation,” IEDM Dig., pp. 915918, 1992.
Team HUBBLE
6

 M. Hack and A.G. Lewis, "Avalanche-Induced Effects in Polysilicon


Thin- Film Transistors,” IEEE Elec. Dev. Let., Vol. 12, No. 5,pp. 203-
205, May 1991.

 H.N. Chern, C.L. Lee and T.F. Lei, “The Effects of Fluorine
Passivation on Polysilicon ThinFilm Transistors,” IEEE Trans. Elec.
Dev., Vol. 41, No. 5,pp.698-702, May 1994.
 S. S. Chen and J. B. Kuo, "An Analytical Moderate Inversion Drain
Current Model for Polycrystalline Silicon Thin-Film Transistors
Considering Deep and Tail States in the Grain Boundary," J. Appl.
Phys., Vol. 79, No. 4, pp. 1961-1967, Feb. 1996.
Y. H. Byun, M. Shur, M. Hack and K. Lee, "New Analytical
Polycrystalline- Silicon Thin-Film Transistor Model for Computer
Aided Design and Parameter Extraction," Sol. St. Elec., Vol. 35, No. 5,
pp. 655-663, May 1992.
 S. S. Chen, F. C. Shone, and J. B. Kuo, "A Closed-Form Inversion-
Type Polysilicon Thin- Film
 Transistor DC/AC Model Considering the Kink Effect," J. Appl.
Phys., Vol. 77, No. 4,pp. 17761784, Feb. 1995.
 C. C. Li, H. Ikeda, T. Inoue, and P. K. Ko, "A Physical Polysilicon
Thin Film Transistors Model for Circuit Simulations," IEDM Dig.,
pp.497-500, 1993.
 Heterojunction bipolar transistors- M.F.Chang, 1996- Explains GaAs,
InP and silicon-based HBT technologies and their applications to
digital, analog, microwave and mixed-signal circuits and systems.

THANKYOU
Team HUBBLE

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