Unit I Introduction To Mos Transistor
Unit I Introduction To Mos Transistor
Part – A
Moore’s law states that the number of transistor would double every 18 months.
In CMOS technology the aluminum gates of the transistor are replaced by poly
silicon gate.
High performance.
Stick diagram are the key element of designing a circuit used to convey
layer information through the use of a color code .
Micron rules specify the layout constraints such as minimum feature sizes
and minimum allowable feature separations are stated in terms of absolute
dimensions in micrometers.
Lambda rule specify the layout constraints such as minimum feature sizes
and minimum allowable feature separations are stated in terms of a single
parameter (λ) and thus allow linear, proportional scaling of all geometrical
constraints.
10.What is DRC ?
Design Rule Check program looks for design rule violations in the layout.
It checks for minimum spacing and minimum size and ensures that combinations
of layers from legal components.
NMOS PMOS
The majority carriers are electron The majority carriers are holes
Positive voltage is applied at the gate A negative voltage is applied at the gate
terminal terminal
Inversion mode
When the gate to source voltage(Vgs) is much less than the threshold
voltage (Vt) then it is termed as the accumulation mode. There is no conduction
between source and drain. The device is turned off.
When the gate to source voltage(Vgs) is increased greater than the threshold
voltage (Vt) the electrons are attracted towards the gate while the holes are
repelled causing a depletion region under the gate. This is called depletion mode.
When Vgs is raised above the Vt the electrons are attracted to the gate
region. Under such a condition the surface of the underlying p-type silicon is
said to be a inverted to n-type, and provides a conduction path between a source
and drain. The device is turned on. This is called inversion mode.
cut-off region
The region where the current flow is essentially zero is called cut-off region.
Weak inversion region where the drain current is dependent on the gate
and the drain voltage is called non saturated region
(ie) 0<Vds < Vgs – Vt
Channel is strongly inverted and the drain current flow is ideally independent
of the drain-source voltage is called saturated region.
Breakdown voltages
Size is less
high high speed
low power consumption
Design Rule Check program looks for design rule violations in the layout. It
checks for
minimum spacing and minimum size and ensures that combinations of layers from
legal
components.
Micron rules specify the layout constraints such as minimum feature sizes
and minimum
Layout rules can be used as a prescription for preparing the photomasks that are
used in the fabrication of integrated circuits
The lateral space required to transition from thick to thin oxide is called as bird's
beak effect.
when all wells at the same voltage level is called as equipotential wells.
38. Infer transistor rules?
The active mask defines all areas where either n or p type diffusion is to be placed
or where the gates of transistors are to be placed.
The design rules which defines where the n-well and p-well is to be placed and it
also gives the space between other elements is called as well rules.
1. Discuss in detail with a neat layout, the design rules for a CMOS inverter.
4. Discuss the principle of constant field scaling and also write its
effect on device characteristics.
5. Explain the small signal model of MOS transistors with neat diagram and
expression.
PART –A
General property of Elmore delay model network has Single input node
All the capacitors are between a node and ground Network does not contain any
resistive loop
Static power dissipation (due to leakage current when the circuit is idle). Dynamic
power dissipation(when the circuit is switching) and Short –circuit power
dissipation during switching of transistors.
Power dissipation due to leakage current when the idle is called the
static power dissipation. Static power due to
2. By using two operating modes, active and standby for each function blocks.
3. By adjusting the body bias (i.e) adjusting FBB (Forward Body Bias) in
active mode to increase performance and RBB (Reverse Body Bias) in
standby mode to reduce leakage.
Pass transistor logic (PTL) circuits are often superior to standard CMOS
circuits in terms
They do not have path VDD to GND and do not dissipate standby power(static
power dissipation).
The circuit constructed with the parallel connection of PMOS and NMOS
with shorted drain and source terminals. The gate terminal uses two select signals s
and s, when s is high than the transmission gates passes the signal on the input.
The main advantage of transmission gate is that it eliminates the threshold voltage
drop.
14.why low power has become an important issue in the present day VLSI
circuit realization?
Indeep submicron technology the power has become as one of the most important
issue because of:
15.what are the various ways to reduce the delay time of a CMOS inverter ?
Various ways for reducing the delay time are given below:
a)the width of the MOS transistor can be increased to reduce delay.this is known
as gate sizing,which will be discussed later in moredetails.
c)delay can also be reduced by increasing the supply voltage Vdd and/or
reducing the threshold voltage Vt of the MOS transistors
the operation of the circuit can be explained using precharge logic in which
the output is precharged to HIGH level during Φ2 clockand the output is
evaluated during Φ1 clock.
17.what makes dynamic CMOS circuits faster than static CMOS circuits ?
20. Compare and contrast clock gating versus power gating approaches.
1.Parity generator
3.Multiplexer
22. what are the various ways to reduce the delay time of a CMOS inverter
?
Various ways for reducing the delay time are given below: a)the width of the
MOS transistor can be increased to reduce delay.this is known as gate sizing,which
will be discussed later in moredetails. b)the load capacitance can be reduced to
reduce delay.this is achivedby using transistor of smaller and smaller dimension by
feature generation technology. c)delay can also be reduced by increasing the
supply voltage Vdd and/or reducing the threshold voltage Vt of the MOS
transistors
23. Compare and contrast clock gating versus power gating approaches.
It requires one diffusion path and no switches. It requires two diffusion path and
two swithes
A device connected so as to pull the output voltage to the upper supply voltage
usually Vdd is called pull down device
the elmore delay is a fitting metric for RC trees. Delay at node K is 0.69
∑_(j=1)^NCj*Rjk〗
Elmore delay is used to compute signal delays for both analog and digital circuit
interconnects. The elmore delay formula is useful for analyzing wires and to
approximate the propagation delay of complex transistor networks.
It is a MOS transistor, in which gate is driven by a control signal the source (out),
the
drain of the transistor is called constant or variable voltage potential(in) when the
control signal
is high, input is passed to the output and when the control signal is low, the output
is floating
The circuit constructed with the parallel connection of PMOS and NMOS with
shorted drain and source terminals. The gate terminal uses two select signals s and
s, when s is high than the transmission gates passes the signal on the input. The
main advantage of transmission gate is that it eliminates the threshold voltage drop
1.Bubble pushing
2.Compound gates
3.Assymetic gates
4.Skewed gates
5.P/N Ratios
Static CMOS design is most widely used logic style. The static CMOS style is an
extension of the static CMOS inverter to the multiple inputs.
Pass transistor logic (PTL) circuits are often superior to standard CMOS circuits
in terms
They do not have path VDD to GND and do not dissipate standby power(static
power
dissipation).
37. what makes dynamic CMOS circuits faster than static CMOS circuits ?
38. Why low power has become an important issue in the present day VLSI
circuit realization?
in deep submicron technology the power has become as one of the most important
issue because of: Increasing transistor count; the number of transistors is getting
doubled in every 18 months based on Moore,s Law Higher speed of operation;
the power dissipation is proportional to the clock frequency Greater device
leakage currents; In nanometer technology the leakage component becomes a
significant percentage of the total power and the leakage current increases at a
faster rate than dynamic power in technology generations.
2. By using two operating modes, active and standby for each function blocks.
3. By adjusting the body bias (i.e) adjusting FBB (Forward Body Bias) in active
mode to
increase performance and RBB (Reverse Body Bias) in standby mode to reduce
leakage.
4. By using sleep transistors to isolate the supply from the block to achieve
significant
These structures occupy small area compared with conventional logic structure
Parasitic capacitance is to be small to increase the speed.Each gate can make one
logic 1 to logic transition.
The ratio of PMOS to NMOS transistor width is called P/N ratio for the logic gate.
The mobility ratio is 2. which is the best ratio giving least delay
Dynamic circuits overcome the drawbacks of ratioed circuits by the use of clocked
pull-up transistor.
v) non-zero Vol
the output of the n-type dynamic gate is charged up to Vdd, & the output of the
inverter is set to 0.
the dynamic gate conditionally discharges, & the output of the inverter makes a
conditional transtion from 0 to 1
PART – B
UNIT -3
PART – A
Ratioed circuits.
Pass-transistor circuits.
The function of the PDN is provide a connection between the output and VSS .
Both PDN and PUN are constructed in mutually exclusive way such that one and
only one of the networks is conducting in steady state. That is, the output node is
always a low-impedance node in steady state.
4.What is Dynamic CMOS logic ?
Non-ratioed.
A static CMOS inverter placed between dynamic gates which eliminate the
monotonicity problem in dynamic circuits are called CMOS Domino logic.
In the melay state machine we can calculate the next state and output both
from the input and state. But in the moore state machine we can calculate only next
state but not output from the input and the state and the output is issued according
to next state.
Propagation delay(t pd): The amount of time needed for a change in a logic
input to result in a permanent change at an output,that is the combinational logic
will not show any further output changes in response to an input change alter time
fod units
Setup time (t setup): The amount of time before the clock edge that data
input D must be stable the rising clock edge arrives.
Hold time (t hold): This indicates the amount of time after the clock edge arrives
the data input D must be held stable in order for FF to latch the correct value.
Hold time is always measured from the rising clock edge to a point after the
clock edge.
Both SRAMs and DRAMs are volatile in nature, ie. Information is lost if
power line is removed. However SRAMs provide high switching speed, good
noise margin but require large chip area than DRAMs.
18.Explain the read and write operations for a one-transistor DRAM cell.
19.what is MTBF ?
MTBF=(1/P(failure)) = ( Ti e(Ti=tsetup/ti)/Nto)
20. what do you meant by Max delay constraint and Min delay constraint ?
Min delay constraint: the path begins with the rising edge of the clock
triggering F1. The data may begin to change at Q1 after a clk-to-Q contamination
delay. However, it must not reach D2 until at least the hold after the clock edge,
lest it corrupt the contents of F2. Hence, we solve for minimum logic
contamination delay :
tcd >= thold – tccq
Max delay constraint : the path begins with the rising edge of the clock
triggering F1. The data must propagate to the output of the flipflop Q1 and
through the combinational logic to D2, setting up at F2 before the next rising
clock edge. Under ideal conditions, the worst case propagation delays determine
the minimum clock period for this sequential circuitry
1. Differential flip-flops accepts true and complementry inputs and produces true
and complementry outputs.
2. They are build from a clocked sense amplifier so they can rapidly respond to
small differential input voltages, while they are larger than an ordinary signal
ended flip-glops having an extra inverter to produce the complementry output.
3. They work well with low swing inputs such as register file bit lines and low
swing busses.
contamination delay: The amount of time needed for a change in a logic input to
result in an initial change at an output, that is the combinational logic is guaranteed
not to show any output change in response to an input change before fed time units
have passed. until at least the hold after the clock edge, lest it corrupt the contents
of F2. Hence, we solve for minimum logic contamination delay :tcd >= thold –
tccq
In reality clocks have some uncertainty in their arrival times that can cut into
the time available for useful computation is called clock skew.
Setup time (t setup): The amount of time before the clock edge that data input D
must be stable the rising clock edge arrives.
Hold time (t hold): This indicates the amount of time after the clock edge arrives
the data input D must be held stable in order for FF to latch the correct value. Hold
time is always measured
PART – B
PART – A
t = (n-1)tc+ts
8.Write down the expression to obtain delay for N-bit carry bypass adder.
The simplest multiplier is the Braun multiplier. All the partial products are
computed in parallel, and then collected through a cascade of Carry Save
Adders. The completion time is limited by the depth of the carry save array, and
by the carry propagation in the adder. This multiplier is suitable for positive
operands.
Logarithm shifter
n-bit rotation is specified by using the control word R0-n and L/R bit defines a left
or right shifting.
TG is added at the input side, then the circuit will get the ability to control the
data.
In this process, Vdd voltage is varied from 3 to 6 volts, while varying the
tested cycle time.
1.Global routing
2.Detailed routing
21. Give the reason for Why CLA has large area than RCA?
The area of CLA is larger than the area of ripple carry adder for particular input.
This is because of the computations are performed in parallel manner which
requires a large number of gates and results in larger area.
It deals with the placement of the logic block into the overall design.
4 bit adder
2:1 mux
D flip flop
Hardware cost is increased because each bit addition is done two time one is with
input of cin=0 and other is cin=1.
PART – B
3.what is 4*4 carry save multiplier. Calculate its critical path delay
4. Explain the following circuits 1. Data path circuit 2. Any one adder circuit
7.describe about carry look-ahead adder and its carry generation and propogation.
UNIT – 5
PART – A
The interconnect uses predefined spaces No predefined areas are set aside for
between rows of base cells routing between cells.
Circuit level
The core is a array of programmable basic logic cells that can implement
combinational
11.What is FPGA ?
1. Fusible links
2. UV-erasable EPROM
13.What is an antifuse ?
Grid spacing must be defined for each routing layer. It needs to be atleast
line-on-via and are usually via-on-via. The cell height must be a multiple of the
horizontal grid spacing and the cell width must be a multiple of vertical grid
spacing.
16. Define filler cells?
The filler cells are used to provide continuity for the VDD/GND rails and
for n-well. It should be included in standard cell library.
Some manufacturers add their own version of filler cells into design when
fabricating the chip. Sometimes it results in fabrication errors.
Structured gate array can also be called as embedded gate array or master
slice or master image gate array. It combines some of the features of CBIC and
MGA (Masked Gate Array)
The small element which is replicated to make the base array is known as
base cell. It’s other name is primitive cell.
Each cell has i/o ports.There are 2 types of port placement. These are
known as exterior placement and interior placement.
In Exterior placement, i/o ports are placed above and below VDD and Vss. In
interior ports placement I/O ports are placed inside the cell.
PART – B