SSFQ4614

40V N-Channel + P-Channel Complementary MOSFET

Main Product Characteristics

V(BR)DSS -40V 40V

Q4614
35mΩ@-10V 19mΩ@10V
RDS(on)MAX

45mΩ@-4.5V 29mΩ@4.5V
SOP-8 Marking and Pin Schematic Diagram
Assignment
ID -7A  8A 

Features and Benefits

„ Advanced MOSFET process technology
„ Ideal for battery operated systems, load switching,
power converters and other general purpose applications
„ Low on-resistance with low gate charge
„ Fast switching and reverse body recovery

Description
The SSFQ4614 utilizes the latest techniques to achieve high cell density and low on-resistance. These
features make this device extremely efficient and reliable for use in high efficiency switch mode power
supply and a wide variety of other applications.

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Parameter Symbol Value Unit
N-Channel MOSFET
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current1 ID 8 A
Pulsed Drain Current (tp=10us) IDM 32 A
Continous Source-Drain Diode Current IS 8 A
P-Channel MOSFET
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current1 ID -7 A
Pulsed Drain Current (tp=10us) IDM -28 A
Continous Source-Drain Diode Current IS -7 A
Temperature and Thermal Resistance
Power Dissipation PD  W
Thermal Resistance from Junction to Ambient1 RJA  °C/W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 to +150 °C
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 °C
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 SSFQ4614
40V N-Channel + P-Channel Complementary MOSFET

N-Channel Electrical Characteristics (TA=25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

tatic
haracteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250μA 40 --- --- V
Zero Gate Voltage Drain Current IDSS VDS =40V,VGS = 0V --- --- 1 μA
Gate-Body Leakage Current IGSS VGS =±20V, VDS = 0V --- --- ±100 nA
Gate Threshold Voltage2 VGS(th) VDS =VGS, ID =250μA 1 1.5 2 V
VGS =10V, ID =8A --- 16 19 m
Drain-Source On-Resistance2 RDS(on)
VGS =4.5V, ID =4A --- 24 29 m
Forward Tranconductance2 gFS VDS =5V, ID =8A --- 10 --- S
Diode Forward Voltage VSD IS=8A, VGS = 0V --- --- 1.2 V
ynamic
haracteristics
Input Capacitance Ciss --- 415 --- pF
Output Capacitance Coss VDS =20V,VGS =0V,f =1MHz --- 112 --- pF
Reverse Transfer Capacitance Crss --- 11 --- pF
witching
haracteristics3
Turn-On Delay Time td(on) --- 4 --- ns
Turn-On Rise Time tr VGEN=10V,VDD=20V, --- 3 --- ns
Turn-Off Delay Time td(off) RG=3¡ˈRL=2.5¡ --- 15 --- ns
Turn-Off Fall Time tf --- 2 --- ns
Total Gate Charge Qg --- 12 --- nC
VDS=20V,ID=8A,
Gate-Source Charge Qgs --- 3.2 --- nC
VGS=10V
Gate-Drain Charge Qgd --- 3.1 --- nC

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 SSFQ4614
40V N-Channel + P-Channel Complementary MOSFET

P-Channel Electrical Characteristics (TA=25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

tatic
haracteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250μA -40 --- --- V
Zero Gate Voltage Drain Current IDSS VDS =-40V,VGS = 0V --- --- -1
-1 μ
Gate-Body Leakage Current IGSS VGS =±20V, VDS = 0V --- --- ±100 nA
Gate Threshold Voltage2 VGS(th) VDS =VGS, ID =-250μA -1 -1.5 -2 V
VGS =-10V, ID =-8A --- 30 35 m
Drain-Source On-Resistance2 RDS(on)
VGS =-4.5V, ID =-4A --- 40 45 m
Forward Tranconductance2 gFS VDS =-5V, ID =-8A --- 16 --- S
Diode Forward Voltage VSD IS=-10A, VGS = 0V --- --- -1.2 V
ynamic
haracteristics
Input Capacitance Ciss --- 520 --- pF
Output Capacitance Coss VDS =-20V,VGS =0V,f =1MHz --- 100 --- pF
Reverse Transfer Capacitance Crss --- 65 --- pF
witching
haracteristics3
Turn-On Delay Time td(on) --- 7.5 --- ns
VGEN=-10V,VDD=-20V,
Turn-On Rise Time tr --- 5.5 --- ns
RG=6 ˈ
Turn-Off Delay Time td(off) --- 19 --- ns
RL=2.3¡
Turn-Off Fall Time tf --- 7 --- ns
Total Gate Charge Qg --- 13 --- nC
VDS=-20V,ID=-8A,
Gate-Source Charge Qgs --- 3.8 --- nC
VGS=-10V
Gate-Drain Charge Qgd --- 3.1 --- nC

/! ?
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300s, duty cycle2%.
3. Switching characteristics are independent of operating junction temperature.

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 SSFQ4614
40V N-Channel + P-Channel Complementary MOSFET

N-Channel Typical Electrical and Thermal Characteristic Curves

Output Characteristics Transfer Characteristics
30 20

Ta=25℃ VDS=5V
VGS=4.5V
Pulsed Pulsed
25
VGS=10V 16

(A)
VGS=3.5V
(A)

20

ID
12
ID

DRAIN CURRENT
Ta=25℃
DRAIN CURRENT

15

10
VGS=3V

4
5

VGS=2.5V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS

40 60

Ta=25℃ Pulsed
Pulsed
50 ID=8A
(m)

(m)

30

VGS=4.5V 40
RDS(ON)

RDS(ON)
ON-RESISTANCE

ON-RESISTANCE

20 30 Ta=100℃

VGS=10V 20

10 Ta=25℃
10

0 0
1 2 3 4 5 6 7 8 2 4 6 8 10

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

IS —— VSD Threshold Voltage

8 2.0

Pulsed
(V)

1.5
IS (A)

VTH

1
Ta=100℃
Ta=25℃
THRESHOLD VOLTAGE
SOURCE CURRENT

1.0
ID=250uA

0.1

0.5

0.01 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125

SOURCE TO DRAIN VOLTAGE VSD (V) JUNCTION TEMPERATURE Tj ( ℃)

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 SSFQ4614
40V N-Channel + P-Channel Complementary MOSFET

P-Channel Typical Electrical and Thermal Characteristic Curves

Output Characteristics Transfer Characteristics
-50 -50

Ta=25℃ VGS=-4V,-7V,-10V
VDS=-5V
Pulsed VGS=-3.5V
Pulsed
-40 -40

(A)
(A)

ID
-30 -30
ID

DRAIN CURRENT
Ta=25℃
DRAIN CURRENT

-20 VGS=-3V -20

-10 VGS=-2.5V -10

-0 -0
-0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS

80 150

Ta=25℃ Pulsed
Pulsed
(m)

(m)

60

100 ID=-8A
RDS(ON)

RDS(ON)

VGS=-4.5V

40
ON-RESISTANCE

ON-RESISTANCE

Ta=100℃
50
VGS=-10V
20

Ta=25℃

0 0
-2 -4 -6 -8 -3 -4 -5 -6 -7 -8 -9 -10

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

IS —— VSD Threshold Voltage

-10 -2.0

Pulsed

-1.8
(V)
IS (A)

VTH

-1.6
THRESHOLD VOLTAGE

ID=-250uA
SOURCE CURRENT

-1 Ta=100℃ Ta=25℃

-1.4

-1.2

-0.1 -1.0
-0.0 -0.4 -0.8 -1.2 -1.6 25 50 75 100 125

SOURCE TO DRAIN VOLTAGE VSD (V) JUNCTION TEMPERATURE Tj ( ℃)

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 SSFQ4614
40V N-Channel + P-Channel Complementary MOSFET

Package Outline Dimensions SOP-8

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 1.350 1.750 0.053 0.069
A1 0.100 0.250 0.004 0.010
A2 1.350 1.550 0.053 0.061
b 0.330 0.510 0.013 0.020
c 0.170 0.250 0.007 0.010
D 4.800 5.000 0.189 0.197
e 1.270（BSC） 0.050（BSC）
E 5.800 6.200 0.228 0.244
E1 3.800 4.000 0.150 0.157
L 0.400 1.270 0.016 0.050
θ 0° 8° 0° 8°

Suggested Pad Layout

www.goodarksemi.com 6/6 Doc.USSFQ4614xSC2.0