Code No: Y0221/R07

Set No. 1

I B.Tech Regular Examinations, May 2010 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) List out the advantages and disadvantages of both electrostatic and electro magnetic deection system? (b) Explain the following terms: i. ii. iii. iv. Potential Electron Volt Charge density Current density.

[8+8]

2. (a) Determine the resistivity of Germanium: i. in intrinsic condition at 300 0 K ii. with donor impurity of 1 in 107 iii. with acceptor impurity of 1 in 108 Given for germanium at room temperature. ni = 2.5 1013 /cm3 ; p = 1800 cm2 /V-sec, n = 3800 cm2 /V-sec and number of Germanium atoms/cm3 = 4.4 1022 . (b) Compare Avalanche and Zener breakdown. [10+6]

3. (a) Explain the circuit diagram of a single phase full-wave bridge rectier and sketch the input and output wave forms. (b) Dene percentage regulation and prove that the regulation of both half wave and full wave rectier is given by percentage regulation equal to Rf 100%. Rl [8+8] 4. (a) Compare BJT, JFET and MOSFET in all respects. (b) Draw the static characteristics of SCR for dierent gate currents and explain briey. [8+8] 5. What is meant by compensation? Explain the dierent types of compensation techniques with neat circuit diagrams and also compare this with stabilization techniques. [16] 6. Obtain CC h parameters in terms of CE h parameters. 7. (a) Dene Desensitivity D. What is the signicance of this? [16]

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Code No: Y0221/R07

Set No. 1

(b) An amplier without feedback gives a fundamental output of 36V with 7 percent second-harmonic distortion when the input is 0.028V. If 1.2 percent of the output is fed back into the input in a negative voltage series feedback circuit, what is the output voltage? If the fundamental output is maintained at 36V but the second-harmonic distortion is reduced to 1 percent, what is the input voltage? [6+10] 8. (a) Give the two Barkhausen conditions required in order for sinusoidal oscillations to be sustained. (b) Calculate the series resonant frequency and the parallel resonant frequency of a crystal oscillator, if the values are L=20H, C=0.05pF, R = 2K and CM =10PF. [8+8]

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Code No: Y0221/R07

Set No. 2

I B.Tech Regular Examinations, May 2010 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) With the help of a block schematic, explain the working of a CRO and what are the applications of CRO? (b) In a CRT, a pair of deecting plates are 2.5 cm long and 0.5 cm apart. The distance from the centre of the plates to the screen is 20 cm. The nal anode voltage is 1200V. Calculate: i. The displacement produced for a deecting voltage of 20V ii. The angle, which the beam makes with the axis of the tube on emerging from the eld. [10+6] 2. (a) With a neat schematic diagram explain the working of Tunnel diode and also discuss about its V-I characteristics. (b) The current through silicon diode, If =60 mA for a forward bias of Vf = 0.6 Volts. Calculate the static resistance. [10+6] 3. (a) A 15-0-15 Volts (rms) ideal transformer is used with a full wave rectier circuit with diodes having forward drop of 1 volt. The load is a resistance of 100ohm and a capacitor of 10,000f is used as a lter across the load resistance. Calculate the dc load current and voltage. (b) Draw the circuit diagram of a bridge rectier circuit with L-section lter and explain its operation. [8+8] 4. (a) For a small signal JFET iD = f(VGS , VDS ). Obtain expressions for iD and hence dene gm , rd and . (b) From the denition of gm and rd obtain expression for . (c) For an n-channel silicon FET with a = 3104 cm and ND = 1015 electrons/cm3 . Find the pinch o voltage. [5+5+6] 5. (a) What do you understand by dc and ac load line? Explain how to choose the operating point? (b) For a xed bias conguration, determine IbQ , ICQ and VceQ using the following specications: Vcc = 16V, =90, Rc = 2.7K, Rb =470K and also nd the saturation current Isat. [8+8] 6. (a) Explain the method of evaluating h parameters for a transistor in CB conguration.

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Code No: Y0221/R07

Set No. 2

(b) A CC amplier is driven by a voltage source of internal resistance Rs =1k. The load impedance if RL =1K. The transistor parameters are hic = 1.1K, hf c = -51, hrc =1, hoc = 25A/V. Compute input and output impedance of the amplier. [8+8] 7. (a) An amplier has a gain of -100 and a distortion of 8%. What is the eect of introducing negative feedback with feedback factor of 0.05? (b) Find Af for a CE stage with an un bypassed emitter resistor. [8+8]

8. Verify the following equations for the transistor phase-shift oscillator of shown in gure 8. 1 1 f = 2RC 6+4k hf e = 4k + 23 + 29/k [16] Where k=Rc /R

Figure 8

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Code No: Y0221/R07

Set No. 3

I B.Tech Regular Examinations, May 2010 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) An electron is moving perpendicular to magnetic eld B. Derive the expression for radius R of the trajectory and period of rotation T. (b) Derive the expression for the electro magnetic deection sensitivity in the CRT. [8+8] 2. (a) How does the reverse sturation current of diode varies with temperature. Explain. (b) Draw the energy band diagram of p-n diode for no bias, forward bias and reverse bias and explain. [6+10] 3. (a) Draw the circuit diagram of a Half wave rectier. Explain the operation of the circuit with relevant waveforms. (b) A bridge rectier uses four identical diodes having forward resistance of 5 each. Transformer secondary resistance is 5 ohms and the secondary voltage is 30 V (rms). Determine the dc output voltage for Idc = 200 mA and value of the output ripple voltage. [8+8] 4. (a) Give the UJT symbol and simplied equivalent circuit with external resistors included. (b) Draw UJT emitter characteristics and mention various regions. (c) If VE <VP and VE >VP , explain how UJT works for these conditions.[6+5+5] 5. (a) Show that stability factor may be put in the form Ge +G1 +G S = Ge /(1+)+G12 2 +G Where the Gs are the conductances. (b) What is heat sink? Why it is used? (c) What is the condition for avoiding thermal runaway problem? [8+4+4]

6. Show that the exact expression for hf b in terms of the CB hybrid parameters is hf (1hre )+hie hoe hf b = (1+hef e )(1hre )+hoe hie [116] from this formula obtain the approximate expression for hf e . 7. (a) List the procedures to follow to obtain the basic amplier conguration without feedback but taking the loading of the feedback network into account. (b) Prove that for voltage-series feedback with Rs = 0, AIf = AI . [8+8]

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Code No: Y0221/R07

Set No. 3

8. (a) Prove that a transistor with a small signal common emitter short circuit current gain less than 44.5 cannot be used in the phase shift oscillator and also draw the corresponding circuit. (b) Draw the crystal oscillator circuit and explain how it generate oscillations. [6+10]

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Code No: Y0221/R07

Set No. 4

I B.Tech Regular Examinations, May 2010 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) With the help of a block schematic, explain the working of a CRO and what are the applications of CRO? (b) In a CRT, a pair of deecting plates are 2.5 cm long and 0.5 cm apart. The distance from the centre of the plates to the screen is 20 cm. The nal anode voltage is 1200V. Calculate: i. The displacement produced for a deecting voltage of 20V ii. The angle, which the beam makes with the axis of the tube on emerging from the eld. [10+6] 2. (a) Draw and explain the V-I characteristics of a p-n junction diode. Use equations wherever necessary. (b) The transition capacitance of an abrupt junction diode is 30pf at 8V. Determine the value of capacitance for an increase in the bias voltage of 2V. [8+8] 3. (a) Derive the expression for DC value of current, R.M.S value of current and Average voltage across the load for a half wave rectier. (b) Compare the performance of series inductor, L-section and -section lters. [8+8] 4. (a) Compare BJT, JFET and MOSFET in all respects. (b) Draw the static characteristics of SCR for dierent gate currents and explain briey. [8+8] 5. (a) Determine the stability factor for the circuit shown in gure 5a.

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Code No: Y0221/R07

Set No. 4

Figure 5a (b) Calculate the thermal resistance for the 2N338 transistor for which the manufacturer species Pc,max =125mW at 250 C free-air temperature and maximum junction temperature Tj =1500 C. What is the junction temperature if the collector dissipation is 75mW? [8+8] 6. (a) Explain the method of evaluating h parameters for a transistor in CB conguration. (b) A CC amplier is driven by a voltage source of internal resistance Rs =1k. The load impedance if RL =1K. The transistor parameters are hic = 1.1K, hf c = -51, hrc =1, hoc = 25A/V. Compute input and output impedance of the amplier. [8+8] 7. (a) Dene Desensitivity D. What is the signicance of this? (b) An amplier without feedback gives a fundamental output of 36V with 7 percent second-harmonic distortion when the input is 0.028V. If 1.2 percent of the output is fed back into the input in a negative voltage series feedback circuit, what is the output voltage? If the fundamental output is maintained at 36V but the second-harmonic distortion is reduced to 1 percent, what is the input voltage? [6+10] 8. (a) Sketch the circuit of a phase shift oscillator using a bipolar junction transistor and explain its operation. (b) Draw the circuit diagram of a crystal oscillator. What are the advantages of a crystal oscillator over an other oscillators? [8+8]

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