STF13NM60N

Datasheet

N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a

TO-220FP package

Features

Order code VDS RDS(on) max. ID

STF13NM60N 600 V 360 mΩ 11 A

2
3 • 100% avalanche tested
1
• Low input capacitance and gate charge
TO-220FP • Low gate input resistance

D(2)
Applications
• Switching applications

G(1)
Description
This device is an N-channel Power MOSFET developed using the second generation
S(3)
of MDmesh technology. This revolutionary Power MOSFET associates a vertical
structure to the company’s strip layout to yield one of the world’s lowest on-resistance
AM01475v1_noZen_noTab and gate charge. It is therefore suitable for the most demanding high efficiency
converters.

Product status link

STF13NM60N

Product summary

Order code STF13NM60N

Marking 13NM60N
Package TO-220FP
Packing Tube

DS14454 - Rev 1 - September 2023 www.st.com

For further information contact your local STMicroelectronics sales office.
 STF13NM60N
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 600 V

VGS Gate-source voltage ±25 V

Drain current (continuous) at TC = 25 °C 11

ID(1) A
Drain current (continuous) at TC = 100 °C 6.9

IDM (2) Drain current (pulsed) 44 A

PTOT Total power dissipation at TC = 25 °C 25 W

IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) 3.5 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 200 mJ

dv/dt (3) Peak diode recovery voltage slope 15 V/ns

Insulation withstand voltage (RMS) from all three leads to external heat sink
VISO 2.5 kV
(t = 1 s, TC = 25 °C)

Tstg Storage temperature range °C

-55 to 150
TJ Operating junction temperature range °C

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case 5 °C/W

RthJA Thermal resistance, junction-to-ambient 62.5 °C/W

DS14454 - Rev 1 page 2/12

 STF13NM60N
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 600 V

VGS = 0 V, VDS = 600 V 1

IDSS Zero gate voltage drain current µA
VGS = 0 V, VDS = 600 V, TC = 125 °C (1)
100

IGSS Gate body leakage current VGS = ±25 V, VDS = 0 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

Static drain-source on-

RDS(on) VGS = 10 V, ID = 5.5 A 280 360 mΩ
resistance

1. Specified by design, not tested in production.

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 790 - pF

Coss Output capacitance VDS = 50 V, f = 1 MHz,VGS = 0 V - 60 - pF

Crss Reverse transfer capacitance - 3.6 - pF

Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 480 V - 135 - pF

Rg Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.7 - Ω

Qg Total gate charge - 27 - nC

VDD = 480 V, ID = 11 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 13. Test circuit for gate charge - 4 - nC
behavior)
Qgd Gate-drain charge - 14 - nC

1. Coss eq. is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 V to the stated
value.

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 3 - ns

VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω,
tr Rise time - 8 - ns
VGS = 10 V (see Figure 12. Test circuit for
td(off) Turn-off delay time resistive load switching times and - 30 - ns
Figure 17. Switching time waveform)
tf Fall time - 10 - ns

DS14454 - Rev 1 page 3/12

 STF13NM60N
Electrical characteristics

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 11 A

ISDM (1) Source-drain current (pulsed) - 44 A

VSD (2) Forward on voltage ISD = 11 A, VGS = 0 V - 1.5 V

trr Reverse recovery time - 230 ns

ISD = 11 A, di/dt = 100 A/µs, VDD = 100 V
Qrr Reverse recovery charge (see Figure 14. Test circuit for inductive - 2 μC

IRRM load switching and diode recovery times)

Reverse recovery current - 18 A

trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 100 V, - 290 ns

Qrr Reverse recovery charge TJ = 150 °C (see Figure 14. Test circuit for - 2.5 μC
inductive load switching and diode recovery
IRRM Reverse recovery current times) - 17 A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DS14454 - Rev 1 page 4/12

 STF13NM60N
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance

AM03259v1 K GC20940
ID
(A)

10
is
R rea
)
on

10-1
ax a
S(
m his

10µs
by in t
ite tion
Li era

1
d

100µs
p
O
m

1ms Zth = k * RthJC

10-2
Tj=150°C 10ms δ = tp / Ƭ
0.1 Tc=25°C
Single pulse

tp
Ƭ
0.01 10-3
0.1 1 10 100 VDS(V) 10-4 10-3 10-2 10-1 100 tp (s)

Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics

AM03300v1 ID AM03301v1
ID
(A) VGS=10V (A)
VDS=20V
6V
20 20

16 16

12 12
5V

8 8

4 4
4V
0 0
0 5 10 15 20 25 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 5. Normalized gate threshold vs temperature Figure 6. Typical drain-source on-resistance

VDS AM03258v1 RDS(on) AM03302v1

(norm) ID = 1 mA Ω

30 VGS=10V
1.08

8
1.04

1.00

0.96

0.92
-50 0 50 100 TJ (°C) 8 10 D

DS14454 - Rev 1 page 5/12

 STF13NM60N
Electrical characteristics (curves)

Figure 7. Typical gate charge characteristics

Figure 8. Typical capacitance characteristics
AM03304v1
AM03305v1 C
VGS (pF)
(V) VDS(V)
VDD=480V
12
ID=11A 500
VDS 1000
Ciss
10
400
8 100
300
6 Coss
200 10
4
Crss
2 100
1
0 0 0.1 1 10 100 VDS(V)
0 10 20 30 Qg(nC)

Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature
VGS(th) AM03306v1 RDS(on) AM03307v1
(norm)

1.1 2.1
ID=250µA IDD=5.5A
= 5.5 A

1.0 1.7
1.7

1.5

0.9 1.3
1.3

1.1

0.8
80 0.9
0.9

0.7
0.70
0.7 0.5
0.5
-50 0 TJ -50 -25 0 25 50 75 100 TJ(°C)

Figure 11. Typical reverse diode forward characteristics

VSD AM09290v1

(V)
TJ=-50°C
1.2 TJ=25°C

1.0

0.8 TJ=150°C

0.6

0.4
0 2 4 6 8 10 ISD(A)

DS14454 - Rev 1 page 6/12

 STF13NM60N
Test circuits

3 Test circuits

Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit
diode recovery times

A A A
D L
fast 100 µH VD
G D.U.T. diode
S B 3.3 1000 2200 3.3
B B + µF
25 Ω D
µF + µF VDD µF VDD
ID
G D.U.T.
+ RG S

_ Vi D.U.T.

pulse width

AM01470v1
AM01471v1

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

0 10%

AM01472v1 AM01473v1

DS14454 - Rev 1 page 7/12

 STF13NM60N
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 18. TO-220FP type B package outline

7012510_B_rev.14

DS14454 - Rev 1 page 8/12

 STF13NM60N
TO-220FP type B package information

Table 7. TO-220FP type B package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20

DS14454 - Rev 1 page 9/12

 STF13NM60N

Revision history
Table 8. Document revision history

Date Revision Changes

First release. Part number STF13NM60N previously included in datasheet

21-Sep-2023 1
DS6112.

DS14454 - Rev 1 page 10/12

 STF13NM60N
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 TO-220FP type B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

DS14454 - Rev 1 page 11/12

 STF13NM60N

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DS14454 - Rev 1 page 12/12