MDF11N60

MDF11N60
N-Channel MOSFET 600V, 11A, 0.55Ω

N-channel MOSFET 600V

General Description Features
The MDF11N60 uses advanced MagnaChip’s MOSFET  VDS = 600V
Technology, which provides low on-state resistance, high  VDS = 660V @ Tjmax
switching performance and excellent quality.  ID = 11A @ VGS = 10V
 RDS(ON) ≤ 0.55Ω @ VGS = 10V
MDF11N60 is suitable device for SMPS, high Speed switching
and general purpose applications. Applications
 Power Supply
 PFC
 High Current, High Speed Switching

G
D
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 600 V
Drain-Source Voltage @ Tjmax VDSS @ Tjmax 660 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 11 A
Continuous Drain Current (※) o
ID
TC=100 C 6.9 A
(1)
Pulsed Drain Current IDM 44 A
TC=25oC 49 W
Power Dissipation PD
Derate above 25 oC 0.39 W/ oC
Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns
(4)
Single Pulse Avalanche Energy EAS 720 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
※ Id limited by maximum junction temperature

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 2.55

Jun 2011 Version 2.3 1 MagnaChip Semiconductor Ltd.

 MDF11N60
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDF11N60TH -55~150 C TO-220F Tube Halogen Free

N-channel MOSFET 600V

Electrical Characteristics (Ta = 25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.5A - 0.45 0.55 Ω
Forward Transconductance gfs VDS = 30V, ID = 5.5A - 13 - S
Dynamic Characteristics
Total Gate Charge Qg - 38.4 -
(3)
Gate-Source Charge Qgs VDS = 480V, ID = 11A, VGS = 10V - 11.2 - nC
Gate-Drain Charge Qgd - 14 -
Input Capacitance Ciss - 1700 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 6.2 - pF
Output Capacitance Coss - 184 -
Turn-On Delay Time td(on) - 38 -
Rise Time tr VGS = 10V, VDS = 300V, ID = 11A, - 50 -
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 76 -
Fall Time tf - 33 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 11 - A
Source Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 11A, VGS = 0V - - 1.4 V
Body Diode Reverse Recovery Time trr - 430 - ns
IF = 11A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery Charge Qrr - 4.0 - μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤11A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=10.9mH, IAS=11A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Jun 2011 Version 2.3 2 MagnaChip Semiconductor Ltd.

 MDF11N60
30 1.0
Vgs=5.5V Notes
=6.0V 1. 250㎲ Pulse Test
25 =6.5V 2. TC=25
℃
0.9
=7.0V
=8.0V
ID,Drain Current [A]

20 =10.0V 0.8

N-channel MOSFET 600V

=15.0V

RDS(ON) [Ω ]
15 0.7

VGS=10.0V VGS=20V
10 0.6

5 0.5

0.4
5 10 15 20 25 0 5 10 15 20 25 30

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : Drain-Source Breakdown Voltage ※ Notes :

1. VGS = 10 V 1. VGS = 0 V
2.5 2. ID = 5.5 A 2. 250 s Pulse Test
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-100 -50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

* Notes ; ※ Notes :
1. VDS=30V 1. VGS = 0 V
2. ID = 250㎂
10
Reverse Drain Current [A]

10
ID [A]

IDR

150 ℃

25 -55 25 ℃

150℃
℃
℃

1
1

0.1 0.1
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jun 2011 Version 2.3 3 MagnaChip Semiconductor Ltd.

 MDF11N60
4000
3800 Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 11A Coss Coss = Cds + Cgd
3600
120V Crss = Cgd
3400
300V
3200
VGS, Gate-Source Voltage [V]

480V
8 3000
2800

N-channel MOSFET 600V

2600 Ciss

Capacitance [pF]
6 2400
2200
2000
1800
4
1600
1400 ※ Notes ;
1200 1. VGS = 0 V
2 1000 2. f = 1 MHz

800
600
0 400
Crss
200
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 0.1 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10 Operation in This Area
is Limited by R DS(on) 14
10 s

100 s 12
1
10 1 ms
ID, Drain Current [A]

10
ID, Drain Current [A]

10 ms

100 ms 8
0
10 DC 1s

-1 4
10
Single Pulse
TJ=Max rated 2
TC=25 ℃

-2
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃ ]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

1 16000
10
single Pulse
14000
RthJC = 2.55 /W ℃

TC = 25 ℃

12000
Thermal Response

0
10
10000
Power (W)

D=0.5
Zθ JC(t),

8000

0.2
6000
10
-1 0.1

0.05 ※ Notes : 4000

Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
2000
0.02 RΘ JC=2.55 /W
℃

0.01 single pulse

10
-2 0
10
-5 -4
10 10
-3 -2
10 10
-1 0
10 10
1 1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Jun 2011 Version 2.3 4 MagnaChip Semiconductor Ltd.

 MDF11N60
Physical Dimensions

3 Leads, TO-220F

N-channel MOSFET 600V

Dimensions are in millimeters unless otherwise specified

Symbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55

Jun 2011 Version 2.3 5 MagnaChip Semiconductor Ltd.

 MDF11N60
N-channel MOSFET 600V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun 2011 Version 2.3 6 MagnaChip Semiconductor Ltd.