STF13NK50Z

STP13NK50Z - STW13NK50Z
N-channel 500V - 0.40Ω - 11A TO-220/TO-220FP/TO-247
Zener-protected SuperMESHTM Power MOSFET

Features
Type VDSS RDS(on) ID Pw
STF13NK50Z 500 V <0.48 Ω 11 A 30 W
STP13NK50Z 500 V <0.48 Ω 11 A 140 W 3 3
2 2
1
STW13NK50Z 500 V <0.48 Ω 11 A 140 W 1
TO-220 TO-220FP
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
TO-247
■ Very good manufacturing repeatability

Description
Figure 1. Internal schematic diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.

Applications
■ Switching application

Table 1. Device summary

Order code Marking Package Packaging

STF13NK50Z F13NK50Z TO-220FP Tube

STP13NK50Z P13NK50Z TO-220 Tube
STW13NK50Z W13NK50Z TO-247 Tube

August 2007 Rev 1 1/16

www.st.com 16
Contents STF13NK50Z - STP13NK50Z - STW13NK50Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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STF13NK50Z - STP13NK50Z - STW13NK50Z Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220/TO-247 TO-220FP

VDS Drain-source voltage (VGS = 0) 500 V

VGS Gate-source voltage ± 30 V
Drain current (continuous)
ID 11 11(1) A
at TC = 25°C
Drain current (continuous)
ID 6.93 6.93(1) A
at TC=100°C
IDM(2) Drain current (pulsed) 44 44(1) A
PTOT Total dissipation at TC = 25°C 140 30 W
Derating factor 1.12 0.24 W/°C
dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (DC) -- 2500 V
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤11A, di/dt ≤200 A/µs, VDD ≤80% V(BR)DSS

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220 TO-247 TO-220FP

Rthj-case Thermal resistance junction-case Max 0.89 4.17 °C/W

Thermal resistance junction-ambient
Rthj-a 62.5 50 62.5 °C/W
Max
Maximum lead temperature for
Tl 300 °C
soldering purpose

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Electrical ratings STF13NK50Z - STP13NK50Z - STW13NK50Z

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 11 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 240 mJ
(starting Tj=25 °C, Id=Iar, Vdd=50 V)

Table 5. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Igs=±1 mA
BVGSO Gate-source breakdown voltage 30 V
(Open Drain)

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

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STF13NK50Z - STP13NK50Z - STW13NK50Z Electrical characteristics

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 6. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS= 0 500 V
voltage
VDS = Max rating,
Zero gate voltage drain 1 µA
IDSS VDS = Max rating,
current (VGS = 0) 50 µA
TC =125 °C
Gate body leakage current
IGSS VGS = ± 20 V ±10 µA
(VDS = 0)

VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 3 3.75 4.5 V

Static drain-source on
RDS(on) VGS= 10 V, ID= 6.5 A 0.4 0.48 Ω
resistance

Table 7. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15 V, ID = 6.5 A 8.5 S

Ciss Input capacitance

1600 pF
Coss Output capacitance VDS =25 V, f=1 MHz,
200 pF
Reverse transfer VGS=0
Crss 45 pF
capacitance

Coss eq(2). Equivalent output VGS=0, VDS =0 V to 400 V 50 pF

capacitance
Qg Total gate charge VDD=400 V, ID = 6.5 A 47 nC
Qgs Gate-source charge VGS =10 V 9 nC
Qgd Gate-drain charge (see Figure 20) 28 nC

Rg Intrinsic gate resistance f= 1 MHz open drain 2.3 Ω

1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

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Electrical characteristics STF13NK50Z - STP13NK50Z - STW13NK50Z

Table 8. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 18 ns

VDD=400 V, ID=6.5 A,
tr Rise time 23 ns
RG=4.7 Ω, VGS=10 V
td(off) Turn-off delay time 61 ns
(see Figure 19)
tf Fall time 24 ns

Table 9. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 11 A

ISDM(1) Source-drain current (pulsed) 44 A

VSD(2) Forward on voltage ISD=11 A, VGS=0 1.6 V

ISD=6.5 A,
trr Reverse recovery time 380 ns
di/dt = 100 A/µs,
Qrr Reverse recovery charge 3.4 µC
VDD=40 V, Tj=25 °C
IRRM Reverse recovery current 18 A
(see Figure 21)
ISD=6.5 A,
trr Reverse recovery time 425 ns
di/dt = 100 A/µs,
Qrr Reverse recovery charge 3.9 µC
VDD=40 V, Tj=150 °C
IRRM Reverse recovery current 18.5 A
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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STF13NK50Z - STP13NK50Z - STW13NK50Z Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

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Electrical characteristics STF13NK50Z - STP13NK50Z - STW13NK50Z

Figure 8. Output characterisics Figure 9. Transfer characteristics

Figure 10. Transconductance Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

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STF13NK50Z - STP13NK50Z - STW13NK50Z Electrical characteristics

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature

Figure 16. Source-drain diode forward Figure 17. Normalized BVDSS vs temperature
characteristics

Figure 18. Maximum avalanche energy vs

temperature

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Test circuit STF13NK50Z - STP13NK50Z - STW13NK50Z

3 Test circuit

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit
resistive load

Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

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STF13NK50Z - STP13NK50Z - STW13NK50Z Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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Package mechanical data STF13NK50Z - STP13NK50Z - STW13NK50Z

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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STF13NK50Z - STP13NK50Z - STW13NK50Z Package mechanical data

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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Package mechanical data STF13NK50Z - STP13NK50Z - STW13NK50Z

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216

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STF13NK50Z - STP13NK50Z - STW13NK50Z Revision history

5 Revision history

Table 10. Revision history

Date Revision Changes

07-Aug-2007 1 First version

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 STF13NK50Z - STP13NK50Z - STW13NK50Z

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