Scribd
Upload
24 views

MS1226 1593860

This transistor is designed for SSB communications operating at 30 MHz with a power output of 30 watts minimum and intermodulation distortion of -28 dB or better. It has a common emitter configuration, operates at 28 volts, and utilizes emitter ballasting for improved ruggedness and reliability. Maximum ratings include a collector-base voltage of 65 volts, collector-emitter voltage of 36 volts, and power dissipation of 80 watts.

Uploaded by

Teyfik koyuncu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
24 views

MS1226 1593860

This transistor is designed for SSB communications operating at 30 MHz with a power output of 30 watts minimum and intermodulation distortion of -28 dB or better. It has a common emitter configuration, operates at 28 volts, and utilizes emitter ballasting for improved ruggedness and reliability. Maximum ratings include a collector-base voltage of 65 volts, collector-emitter voltage of 36 volts, and power dissipation of 80 watts.

Uploaded by

Teyfik koyuncu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

MS1226

RF & MICROWAVE TRANSISTORS


HF SSB APPLICATIONS
Features
30 MHz
28 VOLTS
IMD = -28 dB
POUT = 30 WATTS
GP = 18 dB MINIMUM
COMMON EMITTER CONFIGURATION

DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.

ABSOLUTE MAXIMUM RATINGS


Symbol Paramete r Value U nit
VCBO Co llector-base Voltage 65 V
VCEO Co llector-emitter Voltage 36 V
VEBO Emit ter-Base Voltage 4.0 V
IC Dev ice Current 4.5 A
PDISS Po wer Dissipation 80 W
TJ Ju nction Temperature +200 C
TSTG Storage Temperature -65 to +150 C

Thermal
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 2.2 C/W

053-7055 Rev - 10-2002


MS1226

ELECTRICAL SPECIFICATIONS (Tcase = 25°


25°C)
STATIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVcbo IC = 200 mA IE = 0 mA 65 --- --- V
BVces IC = 200 mA VBE = 0 V 65 --- --- V
BVceo IC = 200 mA IB = 0 mA 35 --- --- V
BVebo IE = 10 mA IC = 0 mA 4.0 --- --- V
Icbo VCB = 30 V IE = 0 mA --- --- 1.0 mA
HFE VCE = 5 V IC = 500 mA 10 --- 200 ---

DYNAMIC
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
POUT f = 30 MHz PIN = 0.48W VCE = 28V 30 --- --- W
GP f = 30 MHz PIN = 0.48W VCE = 28V 18 --- --- dB
IMD f = 30 MHz PIN = 0.48W VCE = 28V --- ---- -28 dBC
Cob f = 1 MHz VCB = 30V --- --- 65 pf
Conditions VCE = 28 V ICQ = 25 mA

053-7055 Rev - 10-2002


MS1226

PACKAGE MECHANICAL DATA

053-7055 Rev - 10-2002


Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Microchip:
MS1226

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy