BSP 318

SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = 1.2 ...2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D

Type VDS ID RDS(on) Package Marking

BSP 318 60 V 2.6 A 0.15 Ω SOT-223 BSP 318

Type Ordering Code Tape and Reel Information

BSP 318 Q67000-S127 E6327

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TA = 25 °C 2.6
DC drain current, pulsed IDpuls
TA = 25 °C 10.4
Avalanche energy, single pulse EAS mJ
ID = 2.6 A, VDD = 25 V, RGS = 25 Ω
L = 1.38 mH, Tj = 25 °C 8
Gate source voltage VGS ± 14 V
Gate-source peak voltage,aperiodic Vgs ± 20
Power dissipation Ptot W
TA = 25 °C 1.8

Semiconductor Group 1 Sep-12-1996

 BSP 318

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA ≤ 70 K/W
Therminal resistance, junction-soldering point 1) RthJS ≤ 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 60 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current IDSS µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 60 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-state resistance RDS(on) Ω
VGS = 5 V, ID = 2.6 A - 0.12 0.15

Semiconductor Group 2 Sep-12-1996

 BSP 318

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 2.6 A 2.4 5.6 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 580 770
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 180 270
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 70 105
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RGS = 50 Ω - 12 20
Rise time tr
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RGS = 50 Ω - 30 45
Turn-off delay time td(off)
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RGS = 50 Ω - 90 120
Fall time tf
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RGS = 50 Ω - 70 95

Semiconductor Group 3 Sep-12-1996

 BSP 318

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 °C - - 2.6
Inverse diode direct current,pulsed ISM
TA = 25 °C - - 10.4
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 5.2 A, Tj = 25 °C - 0.95 1.2
Reverse recovery time trr ns
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 40 -
Reverse recovery charge Qrr µC
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.04 -

Semiconductor Group 4 Sep-12-1996

 BSP 318

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ 5 V

2.0 2.8

A
W
2.4
Ptot 1.6 ID 2.2

1.4 2.0

1.8
1.2
1.6
1.0 1.4

1.2
0.8
1.0
0.6 0.8

0.4 0.6

0.4
0.2
0.2
0.0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

Safe operating area ID=f(VDS) Transient thermal impedance

parameter : D = 0, TC=25°C Zth JA = ƒ(tp)
parameter: D = tp / T

10 2
K/W

10 1

ZthJC
10 0

10 -1

D = 0.50
10 -2
0.20
0.10
10 -3 0.05
single pulse 0.02

10 -4 0.01

10 -5
-8 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10 10 s 10
tp

Semiconductor Group 5 Sep-12-1996

 BSP 318

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs , Tj = 25 °C parameter: tp = 80 µs, Tj = 25 °C

6.0 0.45 a
Ptotlk = 2W
hg
A ji f e d c Ω
5.0 VGS [V]
ID a 2.5 RDS (on)0.35
4.5 b 3.0
c 3.5
4.0 0.30
d 4.0
e 4.5
3.5
f 5.0 0.25
3.0 g 5.5
h 6.0 0.20
2.5 b
b i 7.0
j 8.0
2.0 0.15 c
k 9.0 d
e
1.5 l 10.0 f gh
0.10 k j i

1.0
VGS [V] =
0.05 a b c d e f g h i j k
0.5 a 2.5
3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0
0.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.4 0.8 1.2 1.6 2.0 A 2.6
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,

5.5 8.0

A
S
4.5
ID gfs
6.0
4.0

3.5 5.0

3.0
4.0
2.5

2.0 3.0

1.5
2.0

1.0
1.0
0.5
0.0 0.0
0 1 2 3 4 5 6 7 8 V 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0
VGS ID

Semiconductor Group 6 Sep-12-1996

 BSP 318

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 2.6 A, VGS = 5 V parameter: VGS = VDS, ID = 1 mA

0.38 4.6
Ω V

0.32 4.0
RDS (on) VGS(th)
3.6
0.28
3.2
0.24
2.8

0.20 2.4
98%
98%
0.16 2.0
typ
typ
1.6
0.12 2%
1.2
0.08
0.8
0.04
0.4
0.00 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

10 0 10 1

Ciss

Coss
10 -1 10 0
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 Sep-12-1996

 BSP 318

Avalanche energy EAS = ƒ(Tj ) Drain-source breakdown voltage

parameter: ID = 2.6 A, VDD = 25 V V(BR)DSS = ƒ(Tj)
RGS = 25 Ω, L = 1.38 mH

9 71

V
mJ
68
EAS 7 V(BR)DSS

66
6

64
5

62
4

60
3

2 58

1 56

0 54
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Safe operating area ID=f(VDS)

parameter : D = 0.01, TC=25°C

Semiconductor Group 8 Sep-12-1996

 BSP 318

Package outlines
SOT-223
Dimensions in mm

Semiconductor Group 9 Sep-12-1996