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    Sipmos Small-Signal Transistor: GS (TH)

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    Miloud Chougui
    This document provides specifications for the BSS 124 N-channel enhancement mode MOSFET transistor. It includes maximum ratings, electrical characteristics at 25°C, and typical performance curves showing characteristics like on-resistance and capacitance as functions of temperature, voltage, and current. The BSS 124 has an operating temperature range of -55°C to 150°C, threshold voltage of 1.5-2.5V, and on-resistance as low as 28 ohms.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Sipmos Small-Signal Transistor: GS (TH)

    Uploaded by

    Miloud Chougui
    52 views7 pages
    This document provides specifications for the BSS 124 N-channel enhancement mode MOSFET transistor. It includes maximum ratings, electrical characteristics at 25°C, and typical performance curves showing characteristics like on-resistance and capacitance as functions of temperature, voltage, and current. The BSS 124 has an operating temperature range of -55°C to 150°C, threshold voltage of 1.5-2.5V, and on-resistance as low as 28 ohms.

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    bss124

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    This document provides specifications for the BSS 124 N-channel enhancement mode MOSFET transistor. It includes maximum ratings, electrical characteristics at 25°C, and typical performance curves showing characteristics like on-resistance and capacitance as functions of temperature, voltage, and current. The BSS 124 has an operating temperature range of -55°C to 150°C, threshold voltage of 1.5-2.5V, and on-resistance as low as 28 ohms.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    52 views7 pages

    Sipmos Small-Signal Transistor: GS (TH)

    Uploaded by

    Miloud Chougui
    This document provides specifications for the BSS 124 N-channel enhancement mode MOSFET transistor. It includes maximum ratings, electrical characteristics at 25°C, and typical performance curves showing characteristics like on-resistance and capacitance as functions of temperature, voltage, and current. The BSS 124 has an operating temperature range of -55°C to 150°C, threshold voltage of 1.5-2.5V, and on-resistance as low as 28 ohms.

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    BSS 124

    SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V

    Pin 1 G Type BSS 124 Type BSS 124

    Pin 2 D Marking SS 124

    Pin 3 S

    VDS
    400 V

    ID
    0.12 A

    RDS(on)
    28

    Package TO-92

    Ordering Code Q67000-S172

    Tape and Reel Information E6288

    Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V

    VDS V

    DGR

    RGS = 20 k
    Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current

    VGS Vgs ID

    14 20 A 0.12

    TA = 37 C
    DC drain current, pulsed

    IDpuls
    0.48

    TA = 25 C
    Power dissipation

    Ptot
    1

    TA = 25 C

    Semiconductor Group

    12/05/1997

    BSS 124

    Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C

    Tj Tstg RthJA

    Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit

    V(BR)DSS
    400 2 0.1 8 10 16 2.5

    VGS = 0 V, ID = 0.25 mA, Tj = 25 C


    Gate threshold voltage

    VGS(th)
    1.5

    VGS=VDS, ID = 1 mA
    Zero gate voltage drain current

    IDSS
    1 50

    VDS = 400 V, VGS = 0 V, Tj = 25 C VDS = 400 V, VGS = 0 V, Tj = 125 C


    Gate-source leakage current

    IGSS
    100

    nA 28

    VGS = 20 V, VDS = 0 V
    Drain-Source on-state resistance

    RDS(on)

    VGS = 10 V, ID = 0.12 A

    Semiconductor Group

    12/05/1997

    BSS 124

    Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit

    gfs
    0.1 0.19 90 10 4 -

    S pF 120 15 6 ns 5 8

    VDS 2 * ID * RDS(on)max, ID = 0.12 A


    Input capacitance

    Ciss Coss
    -

    VGS = 0 V, VDS = 25 V, f = 1 MHz


    Output capacitance

    VGS = 0 V, VDS = 25 V, f = 1 MHz


    Reverse transfer capacitance

    Crss
    -

    VGS = 0 V, VDS = 25 V, f = 1 MHz


    Turn-on delay time

    td(on)

    VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50


    Rise time

    tr
    10 15

    VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50


    Turn-off delay time

    td(off)
    18 25

    VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50


    Fall time

    tf
    15 20

    VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50

    Semiconductor Group

    12/05/1997

    BSS 124

    Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max.

    Unit

    A 0.85 0.12 0.48 V 1.3

    TA = 25 C
    Inverse diode direct current,pulsed

    ISM
    -

    TA = 25 C
    Inverse diode forward voltage

    VSD

    VGS = 0 V, IF = 0.24 A

    Semiconductor Group

    12/05/1997

    BSS 124

    Power dissipation Ptot = (TA)

    Drain current ID = (TA) parameter: VGS 10 V


    0.13 A 0.11

    1.2 W 1.0

    Ptot

    0.9 0.8 0.7

    ID

    0.10 0.09 0.08 0.07

    0.6 0.06 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 0.05 0.04 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 C 160

    TA

    TA

    Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C

    Drain-source breakdown voltage V(BR)DSS = (Tj)

    480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160

    Tj

    Semiconductor Group

    12/05/1997

    BSS 124

    Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C


    0.28 A 0.24

    Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C


    90

    Ptot = 1W
    l h j i gf e d k
    VGS [V] a 2.5
    b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0

    ID

    0.22 0.20 0.18 0.16 0.14 0.12 0.10

    RDS (on) 70
    60 50 40 30 20 10
    VGS [V] =
    a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0

    c d e f g h i

    j k l

    0.08 0.06 0.04 0.02 0.00 0


    a

    c d ef g i j kh

    10

    14

    0 0.00

    0.04

    0.08

    0.12

    0.16

    0.20

    0.26

    VDS

    ID

    Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max


    0.32

    Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max


    0.30

    A S

    ID
    0.24

    gfs
    0.20 0.20

    0.16

    0.15

    0.12 0.10 0.08 0.05 0.04 0.00 0 0.00 0.00

    10

    0.05

    0.10

    0.15

    0.25

    VGS

    ID

    Semiconductor Group

    12/05/1997

    BSS 124

    Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.12 A, VGS = 10 V


    70

    Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA


    4.6 V 4.0

    60

    RDS (on) 55
    50 45 40 35 30 25 20 15 10 5 0 -60

    VGS(th)

    3.6 3.2 2.8

    98% typ

    98%

    2.4 2.0 1.6

    2%

    typ
    1.2 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160

    Tj

    Tj

    Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz


    10 3

    Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s


    10 0

    pF C 10 2

    IF
    10 -1

    Ciss

    10 1

    Coss

    10 -2

    Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

    Crss

    10 0 0

    10

    15

    20

    25

    30

    V VDS

    40

    10 -3 0.0

    0.4

    0.8

    1.2

    1.6

    2.0

    2.4

    3.0

    VSD

    Semiconductor Group

    12/05/1997

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