LM358S D PDF
LM358S D PDF
PIN CONNECTIONS
Output A 1 8 VCC
2
−
7 Output B
Inputs A +
3 6
−
+ 5 Inputs B
VEE/GND 4
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
3.0 V to VCC(max)
VCC VCC
1.5 V to VCC(max)
1 1
2 2
1.5 V to VEE(max)
VEE
VEE/GND
Single Supply Split Supplies
Figure 1.
Bias Circuitry
Common to Both
Output Amplifiers
VCC
Q15
Q16 Q14 Q22
Q13
40 k
Q19
Q18 Q20
Inputs
Q11
Q9
Q17 Q21
Q6 Q7 Q25
Q2 Q5 Q1 2.4 k
Q8 Q10
Q3 Q4 Q26
2.0 k
VEE/GND
http://onsemi.com
2
LM358S, LM2904S
http://onsemi.com
3
LM358S, LM2904S
ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, VEE = GND, TA = 25°C, unless otherwise noted.)
LM358S
http://onsemi.com
4
LM358S, LM2904S
ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, VEE = GND, TA = 25°C, unless otherwise noted.)
LM2904S
http://onsemi.com
5
LM358S, LM2904S
CIRCUIT DESCRIPTION
The LM358S and LM2904S are made using two and Q18. Another feature of this input stage is that the input
internally compensated, two−stage operational amplifiers. common mode range can include the negative supply or
The first stage of each consists of differential input devices ground, in single supply operation, without saturating either
Q20 and Q18 with input buffer transistors Q21 and Q17 and the input devices or the differential to single−ended
the differential to single ended converter Q3 and Q4. The converter. The second stage consists of a standard current
first stage performs not only the first stage gain function but source load amplifier stage.
also performs the level shifting and transconductance Each amplifier is biased from an internal−voltage
reduction functions. By reducing the transconductance, a regulator which has a low temperature coefficient thus
smaller compensation capacitor (only 5.0 pF) can be giving each amplifier good temperature characteristics as
employed, thus saving chip area. The transconductance well as excellent power supply rejection.
reduction is accomplished by splitting the collectors of Q20
http://onsemi.com
6
LM358S, LM2904S
50 k
R1
VCC
VCC 5.0 k
R2 -
10 k VCC
1/2 -
VO Vref 1/2
LM358S
LM358S VO
MC1403 +
2.5 V + 1
fo =
1 2 RC
Vref = V
2 CC
For: fo = 1.0 kHz
R1 R = 16 k
VO = 2.5 V (1 + ) R C
R2 R C = 0.01 F
C
+ 1
e1
1/2 CR R
LM358S R2 Hysteresis
- VOH
R1 VO
- Vref +
a R1 1/2 1/2
R1 eo
LM358S LM358S
+ Vin - VO
b R1 VOL
1 VinL VinH
- CR R1
1/2 Vref
VinL = (V - V )+ Vref
LM358S R1 + R2 OL ref
e2 + R R1
VinH = (V - V ) + Vref
R1 + R2 OH ref
eo = C (1 + a + b) (e2 - e1) R1
H= (VOH - VOL)
R1 + R2
1
fo = 2
R RC
R 100 k
R1 = QR
1
Vin C1 R2 Vref = V
-
C C R2 = R1 2 CC
1/2 R TBP
LM358S - 100 k
1/2 - R3 = TN R2
+ LM358S 1/2 C1 = 10 C
+ LM358S
Vref + For: fo = 1.0 kHz
Bandpass Vref Q = 10
Vref R3 TBP =1
Output
R1 TN =1
R2 - C1
1/2
LM358S
Notch Output R = 160 k
+ C = 0.001 F
R1 = 1.6 M
Vref Where: TBP = Center Frequency Gain R2 = 1.6 M
TN = Passband Notch Gain R3 = 1.6 M
http://onsemi.com
7
LM358S, LM2904S
VCC
C R3
R1 C
Vin -
1/2
LM358S
VO
+ CO
R2
CO = 10 C
Vref 1
Vref = 2 VCC
ORDERING INFORMATION
http://onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP−8
CASE 626−05
ISSUE P
DATE 22 APR 2015
SCALE 1:1
NOTES:
D A 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
E 2. CONTROLLING DIMENSION: INCHES.
H 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK-
AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
8 5
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
E1 NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
1 4
TO DATUM C.
6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE
NOTE 8 LEADS UNCONSTRAINED.
c 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
b2 B END VIEW LEADS, WHERE THE LEADS EXIT THE BODY.
TOP VIEW WITH LEADS CONSTRAINED 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
NOTE 5
INCHES MILLIMETERS
A2 DIM MIN MAX MIN MAX
e/2 A −−−− 0.210 −−− 5.33
A NOTE 3 A1 0.015 −−−− 0.38 −−−
A2 0.115 0.195 2.92 4.95
L b 0.014 0.022 0.35 0.56
b2 0.060 TYP 1.52 TYP
C 0.008 0.014 0.20 0.36
D 0.355 0.400 9.02 10.16
SEATING
PLANE D1 0.005 −−−− 0.13 −−−
A1 E 0.300 0.325 7.62 8.26
C M E1 0.240 0.280 6.10 7.11
D1 e 0.100 BSC 2.54 BSC
eB −−−− 0.430 −−− 10.92
e eB L 0.115 0.150 2.92 3.81
8X b END VIEW M −−−− 10 ° −−− 10 °
0.010 M C A M B M NOTE 6
SIDE VIEW
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1. AC IN
2. DC + IN XXXXXXXXX
3. DC − IN AWL
4. AC IN
5. GROUND YYWWG
6. OUTPUT
7. AUXILIARY
8. VCC
XXXX = Specific Device Code
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42420B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS: ONLINE SUPPORT: www.onsemi.com/support
Technical Library: www.onsemi.com/design/resources/technical−documentation For additional information, please contact your local Sales Representative at
onsemi Website: www.onsemi.com www.onsemi.com/support/sales