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Solid State Theory FS 2014

Exercise Sheet 5. Prof. Manfred Sigrist

Exercise 1. Specific Heat of a Metal, a Semiconductor, and Graphene

The specific heat at constant volume is defined as


 
1 ∂U
cV = (1)
V ∂T V,N

where U is the internal energy of the system.

a) Calculate the specific heat of a metal for small temperatures kB T  µ. Neglect the
Coulomb interaction and assume there is only one conduction band with a parabolic dis-
persion relation
~2 k2
εk = . (2)
2m
Note that in order to have a fixed number of particles, the chemical potential will shift
when temperature is changed! You will have to use the Sommerfeld expansion
Z∞ Zµ ∞
H(ε) X d2n−1 H(ε)
dε = dε H(ε) + an (kB T )2n (3)
e(ε−µ)/kB T + 1 dε2n−1 ε=µ
−∞ −∞ n=1

where a1 = π 2 /6, a2 = 7π 4 /360, . . . .

b) Calculate the specific heat of an undoped semiconductor under the assumption kB T  Eg ,


where Eg is the band gap. Show that it contains an ideal gas-like contribution (3/2)n(T )kB
where n(T ) is the number of excitations, and a correction. Is this correction small or large?
To proceed, use the k · p-approximation for the band spectrum, given by eq. (2.27) in the
lecture notes. The chemical potential µ(T ) has to be calculated from the condition, that
the number of electrons in the conduction band (ne (T )) is equal to the number of holes in
the valence band (nh (T )).

c) Calculate the specific heat of graphene at half filling. (For the band structure of graphene
cf. previous exercise sheet.) Note that the perfect particle-hole symmetry fixes chemical
potential to the Dirac nodes at all temperatures. To simplify the calculation, approximate
the dispersion around the two Dirac points as

εk = ±~vF |k|, (4)

where k is relative to the position of a Dirac node.

Exercise 2. Spin Susceptibility of a Metal, a Semiconductor, and Graphene

The Pauli spin susceptibility is defined as


 
∂M
χPauli = (5)
∂H H=0 T,V,N

where M is the net electron magnetization.

1
a) Calculate the Pauli spin susceptibility of a metal due to its conduction electrons. Assume
that the magnetic field couples only to the electron spin.

b) Calculate the spin susceptibility of a semiconductor with gap Eg > 0 and compare the
result to an ideal paramagnetic gas.

c) Calculate the spin susceptibility of graphene

Use the same assumptions about the electron spectra as in Exercise 1.

Exercise 3. Compressibility of a Metal, a Semiconductor, and Graphene

The compressibility of a system with volume V is defined as


   
1 ∂V 1 ∂n
κ=− = 2 . (6)
V ∂p T,N n ∂µ T,V

a) Show that the two formulas above are equivalent. To do so, you may find useful the
Gibbs-Duhem relation
N dµ = V dp − SdT (7)
which states that the equilibrium parameters µ, p and T cannot be varied independently.

b) Calculate the compressibility of a gas of free and independent electrons with density n.
(Coulomb interaction is neglected.)

c) Calculate compressibility of an electron gas in the jellium model where Coulomb interaction
are considered. Use that within the Hartree-Fock theory (cf. section 3.1.2 in the lecture
notes), the energy per electron is given by
 
2.21 0.916
εg = − Ry (8)
rs2 rs

where 1Ry = e2 /2aB and rs = d/aB with aB the Bohr radius and d the radius of the
average volume occupied by one electron

~2 1
aB = n= 4 , (9)
me2 3 πd
3

n = kF3 /3π 2 is the number of electrons per unit volume. Compare results (a) and (b).

d) Show that electrons in an insulator are incompressible.

e) Calculate compressibility of the delocalized pz -electrons in graphene.

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