+010N60 / +010N60F

600V N-Channel MOSFET

General Description Features

This Power MOSFET is produced using SL semi‘s • 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
advanced planar stripe DMOS technology. • Low gate charge ( typical 48nC)
This advanced technology has been especially tailored to • High ruggedness
minimize on-state resistance, provide superior switching • Fast switching
performance, and withstand high energy pulse in the • 100% avalanche tested
avalanche and commutation mode. These devices are well • Improved dv/dt capability
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.

{
D

◀ ▲
{G ●
●

TO-220 GD S
TO-220F
G DS
{S

Absolute Maximum Ratings TC = 25°Cunless otherwise noted

Symbol Parameter HM10N60 HM10N60F Units

VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 10.0 10.0* A
- Continuous (TC = 100°C) 6.0 6.0* A
IDM Drain Current - Pulsed (Note 1) 40 40 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 709 mJ
EAR Repetitive Avalanche Energy (Note 1) 16.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 162 52 W
- Derate above 25°C 1.30 0.42 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter HM10N60 HM10N60F Units
RθJC Thermal Resistance, Junction-to-Case 0.77 2.4 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

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 HM10N60 / HM10N60F
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 5.0A -- 0.62 0.75 Ω
On-Resistance

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1650 -- pF
Coss Output Capacitance f = 1.0 MHz -- 165 -- pF
Crss Reverse Transfer Capacitance -- 18 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 25 -- ns
VDD = 300 V, ID = 10.0A,
tr Turn-On Rise Time -- 70 -- ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 140 -- ns
(Note 4, 5)
tf Turn-Off Fall Time -- 80 -- ns
Qg Total Gate Charge VDS = 480 V, ID = 10.0A, -- 48 - nC
Qgs Gate-Source Charge VGS = 10 V -- 7.0 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 18.0 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 10.0 A, -- 430 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 4.3 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13mH, IAS = 10.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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Typical Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for HM10N60 for HM10N60F

10

8
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature [? ]

Figure 10. Maximum Drain Current

vs Case Temperature

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Typical Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve

for HM10N60

Figure 11-2. Transient Thermal Response Curve

for HM10N60F

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 Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
td
(on
)
tr td
(off) tf
to
n
to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L B V DS S
1
V E
AS=---- LIAS2 --------------------
DS 2 B V DS S-V DD

B
VD SS
ID
IAS
R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)

tp
tp Tim
e

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 Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T +

V D S

I S D
L

D r iv e r
R G
S am e T ype
as D U T V D D

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a te P u ls e W id th
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

IF M , B o d y D io d e F o r w a r d C u r r e n t
I S D
( D U T ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T ) B o d y D io d e R e c o v e r y d v / d t

V S D
V D D

B o d y D io d e
F o r w a r d V o lt a g e D r o p

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http：//www.hmsemi.com
Package Dimensions

TO-220F

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http：//www.hmsemi.com