Semiconductor Processing (Instructor: Joonki Suh)

Homework #1
Due: Sep 27th (Wed) 12:00 PM, noon
Submit to TA, Changhwan Kim (Email: changhwan97@unist.ac.kr)

Problem #1.
Calculate an estimate for silicon lattice constant from its atomic mass (28 amu) and density
(2.3 g/cm3).
[Hint: Silicon has the diamond cubic crystal structure]

Solution #1.
- One mole is approximately 28 grams (per ~6 × 1023 atoms), and silicon density (𝜌=m/V)
is 2.3 g/cm3.
- Silicon molar volume is then Vmolar=28 g / (2.3 g/cm3) = 12.2 cm3
- Silicon unit cell consists of 8 atoms, so 6 × 1023 atoms / 8 atoms per unit cell = 0.75 ×
1023 cell
- 0.75 × 1023 cell must fit volume of 12.2 cm3 or 1.6 × 10-22 cm3/cell
- Taking cubic root of this we get the edge length of the unit cell: 5.45 × 10-8 cm or 0.545
nm. This is very close to the experimental value of 0.543 nm (5.43 Å)
 CHAPTER 3
3.1 Using Fig. 3.6 with 100 nm = 0.1 µm: (a) Wet O2 yields 0.15 hours or approximately
9 minutes. (b) Dry O2 yields 2.3 hours. Nine minutes is too short for good control, so
the dry oxidation cycle would be preferred.Semiconductor Processing (Instructor: Joonki Suh)

3.2 Using Figure 3.6: The first 0.4 µm takes 0.45 hours or 27 minutes. The second 0.4
µm takes (1.5-0.45) hours or 63 minutes. The third 0.4 µm takes (3.2-1.5) hours or
Problem #2.
102 minutes.
1) See Page 7 of Lecture #3. Derive the equation, 𝑡 = 𝑋!" ⁄𝐵 + 𝑋! ⁄(𝐵 ⁄𝐴) − 𝜏 , by solving
Introduction to Microelectronic Fabrication – Second Edition
dXdifferential
⎛ DN equation
o⎞ 1 of dX0/dt with ⎛ the boundary
D⎞ condition
DN o X0(t=0)=Xi.
3.3 2) The o
= gate oxide or X +
⎜ o on <100> ⎟ dX =
o silicon ist to have a thickness of 10 nm.
dt ⎝ M ⎠ for aDCMOS process ⎝ ks ⎠ M
Xo +
k s CHAPTER 3
Calculate the time required to grow this oxide at 850 ℃ in wet oxygen using the above
Integrating
equation and rearranging
you derived. where
Repeat α is an
for 1000 ℃.integration
Do either of constant yields: processes seem to be
these possible
3.1 Using Fig. 3.6 with
controllable? If so,100 nm one.
which ⎛ M
=2 0.1 µm: ⎞(a) Wet⎛ OM ⎞ 0.15
2 yields Mα hours or approximately
9 minutes. (b)may t =
O2 yields
Dry need X ⎜
2.3 ⎟ + X ⎜ ⎟ +
2hours. Nine ⎝minutes
k s ⎠ is which
too
DNshort for good control, so
o o
[Hint: You to look ⎝ up DNtheo ⎠B/A and N
B ovalues o can be found in lecture notes]
the dry oxidation cycle would be preferred.
2DN o 2D Mα
B= A= τ=
3.2 Using Figure 3.6: The first 0.4Mµm takes 0.45 k shours or 27 DNminutes.
o
The second 0.4
µm takes (1.5-0.45) hours or 63 minutes.
Solution #2. The third 0.4 µm takes (3.2-1.5) hours or
102 minutes. X 2i Xi
Assuming τ = 0 at Xo = Xi: + =τ
1) B (B / A )
dX o ⎛ DN o ⎞ 1 ⎛ D⎞ DN o
3.3 = or ⎜ X othe+ following
⎟ dX o =equations t with spreadsheets.
dt ⎝ M ⎠
Problems 3.4 throughD 3.10 evaluate⎝ k ⎠ M
Xo + s
ks
⎡ 4 B ⎤
0.5 A ⎢ 1 +and2 (rearranging
X o = Integrating t + τ) − 1⎥ where τ=X α 2iis B X i (B A )constant
an+integration X 2o B + X o (B A ) − τ
t = yields:
⎣ A ⎦ ⎛ M ⎞ ⎛ M ⎞ Mα
t = X 2o ⎜ ⎟ + Xo⎜ ⎟+
⎝ 2DN o ⎠ ⎝ N o k s ⎠ DN o
3.4
2DN o 2D Mα
B =<100> Silicon -AWet=Oxygen τ =
T B/A MB Xi k s tau DNXo o t (hrs)
1150 5.322 0.667 2 0 0.000 1 1.688
X X
τ = 0 at X
Assuming1150 o = Xi:
5.322 0.667 i + 1 i =1.688 τ 2 4.687
1150 5.322 0.667B (B2 / A ) 6.375 3 6.687

3.5 (a) Problems 3.4 through 3.10 evaluate the following equations with spreadsheets.
2)
<100> Silicon - Wet Oxygen
⎡ 4B ⎤ B
+ 2 (t + τ)to−Microelectronic + X i (B A–) Second X o B + X o (B A ) − τ
T B/A Xi tau Xo 2 t (hrs)
X o = 0.5 A ⎢ 1Introduction 1⎥ τ = X 2i BFabrication t = Edition
850
⎣ A
6.116E-02 1.219E-01
⎦ 0 0 0.01 1.643E-01
0.164 hours represents only 9.86 minutes and is too short a time for good control.
3.5
3.4 (b)
<100> Silicon
<100>- Dry Oxygen
Silicon - Wet Oxygen
T T
B/A B/A BB Xi Xi tau tau Xo Xo t (hrs) t (hrs)
1000 1150
4.478E-02 5.322 0.667
1.042E-02 0 0.025 6.182E-01 1 0.01 1.688 ---
0.000
1150 5.322grow 0.010.667
Can't um (< 0.0251um) 1.688 2 4.687
1150 5.322 0.667 2 6.375 3 6.687
Even for slow dry oxidation, it is not possible
- 8 - to grown 10 nm at 1000 C. Prentice Hall
© 2002
3.6 (a) Slightly over six hours
3.5 (a)
(b)
<100> <100>
SiliconSilicon
- Wet Oxygen
- Wet Oxygen
T B/A B Xi tau Xo t (hrs)
T B/A B Xi tau Xo t (hrs)
850 6.116E-02
1150 5.322 1.219E-01
0.667 0.000 0 0.000 0 0.01
2.000 6.3751.643E-01
0.164 hours represents only 9.86 minutes and is too short a time for good control.
3.7 (a) Approximately 3 hours in wet oxygen (b) Over 70 hours in dry oxygen
(c)
<100> Silicon - Wet Oxygen
T B/A B Xi tau Xo t (hrs)
1050 1.504E+00 4.123E-01 0 0 1 3.090
 Semiconductor Processing (Instructor: Joonki Suh)

Problem #3.
A phosphorus diffusion has a surface concentration of 5 × 1018/cm3, and the background
concentration of the p-type wafer is 1×1015/cm3. The Dt product for the diffusion is 10-8 cm2.
1) Find the junction depth for a Gaussian distribution.
2) Find the junction depth for an erfc profile.
Introduction
3) What is the sheettoresistance
Microelectronic Fabrication
of the two – Second Edition
diffusions?

Introduction to Microelectronic Fabrication – Second Edition

Solution #3.
CHAPTER 4
1) CHAPTER24
⎛ j x ⎞
4.1 (a) 10 = 5 x10 exp⎜ −
15 18 -8
⎟ where Dt = 10 cm
2

⎝ 2 Dt ⎠2
⎛ xj ⎞
4.1 x j ==25.92
(a) 10 15
(
18
x102 Dt )
exp⎜=− 5.8 µm
⎝ 2 Dt ⎠
-8
⎟ where Dt = 10 cm
2

(b) 2) ( ( ) )
x j = 2.92 2 Dt =
x j = 2 Dt erfc ⎜ −1 ⎛5.8
10µ15m ⎞
⎝ 5 x10 18 ⎟
⎠
and x j = 5.3 µm
−1 ⎛ 10 ⎞
15
(b) j = 2
(c) xUsing ( ) Dt4.16
Fig. erfc
15
⎜
(b) with a 18 ⎟
surface
⎝35 x10 ⎠
and
concentration 3 5µm
x j = 5.of x 1018/cm3 and a background
concentration of 10 /cm yields Rs xj = 270 ohm-µm. Dividing by the junction depth
(c) 5.8 µmFig.
of Using 4.16R(b)
yields s = with a surface
47 ohms/ . For concentration of 5 use
the erfc profile, 18
x 10Fig. 3
/cm4.16(a)
and a yielding
background
320
µm.
15 3
concentration
ohm-µm and of 60 10 /cm with
ohms/ yields
xj =R5.3
s xj = 270 ohm-µm. Dividing by the junction depth
of 5.8 µm yields Rs = 47 ohms/ . For the erfc profile, use Fig. 4.16(a) yielding 320
ohm-µm 10and 60
Problem20
#4. ohms/ with x = 5.3 µm.
Introduction toj Microelectronic Fabrication – Second Edition
(a) Calculate the Dt product required to form a 0.2-µm-deep source-drain diffusion for an
10NMOS transistor using a solid-solubility-limited arsenic deposition at 1000 ℃ into a wafer
20

(d)10Using
19
with 900 oground
a back C for 15concentration
minutes (about of 3as×short as can
1016/cm 3 be controlled), yields D = 1.49
x 10
(b) -15
Whatcm 2
is /sec for boron.
the diffusion Q =Does
time? 2N OthisDt π seem
time = 6.93like
x 10 14
/cm2. This
a reasonable dose is almost
process?
19
10
two orders of magnitude too high. It is very difficult to get a low enough dose by
direct
10 diffusion.
18
Solution #4.
18
10
o 21 3
4.6 (a) At 17 1000 C, Fig. 4.6 indicates the arsenic surface concentration will be 10 /cm .
10
The Dt product can be found from Eq. 4.10:
xj 2µm
10
17
Dt = = → Dt = 1.189 x 10-11 cm 2
N ⎛ 3 x10 ⎞ 16
1016 2 ln B 2 ln⎜ ⎟
NO ⎝ 1021 ⎠
(b)
1016At 1000 oC, D = 0.32 exp(-3.56/(8.62 x 10-5)(1273)) = 2.603 x 10-15 cm2/sec, and t
= 4567
10
15 sec or 1.27 hrs, a satisfactory time.
(c) From Fig. 4.11 and Table 4.2, x j = 2.29 N ODt n i .
15
10
⎛ E ⎞ ⎛ 1.12 ⎞
n 2i10=14 1.08 x1031 T 3 exp − G = 1.08 x1031 (1273) exp −
3

0 1 2
⎝ kT 3
⎠ 4 5 6
⎝ −5
7 8.62 x810 x1273
⎠
17 3
and14ni = 9.07 x 10 /cm . Distance From Surface (um)
10 2
(d) 0 1 ⎛ 02.2 x10 −34 cm ⎞ ⎛49.07 x10 5
17
⎞ 6 7 −14 8 2
Dt = ⎜ ⎟ ⎜
Distance From Surface (um) ⎟ = 6.92 x 10 cm
⎝ 2.29 ⎠ ⎝ 10 21
⎠
(d)
4.2 The
Using calculation
Fig. 3.10: (a) in (c) is a much0.05
approximately smaller
µm value.
(b) 1 µm

4.2 Using Fig. 3.10: (a) approximately 0.05 µm (b) 1 µm -4

4.3 4.7 (a) Using
UsingFig.
Fig.4.8,
4.10
a 1for a constant-source
ohm-cm n-type waferdiffusion with N/Nconcentration
has a background O = 10 , the of
normalized
4.0 x

[( )]
vertical xj = 2.75 units, and the normalized
2
horizontal x j at the surface = 2.25 units.
4.3 1015
(a) /cm3.Fig.
Thus
Using
horizontal
So:4.8,
5 x10 xjexp
18
a 1 ohm-cm− xn-type
j / 2 Dt
= (2.25/2.75) x vertical xx10 15
j. The
= 4.0a background
wafer has
lateral for
. Solving diffusion = 4xµm
=xj0.5
Dt withof
concentration 4.0 x x
-4 (2.25/2.75) or 0.41 µm. L-9= Lox 2 - 2∆L =
o 3 – 0.82 = 2.18 µm.
10 cm yields Dt = 5.61 x 10 cm . 1100 2 C = 1373K, and D = 10.5 exp (-3.69/kT)