Atmel AT29C020 12JC Datasheet
Atmel AT29C020 12JC Datasheet
Atmel AT29C020 12JC Datasheet
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
VCC
A12
A15
A16
A17
WE
NC
4
3
2
1
32
31
30
A7 5 29 A14
A6 6 28 A13
A5 7 27 A8
A4 8 26 A9
A3 9 25 A11
A2 10 24 OE
A1 11 23 A10
A0 12 22 CE
I/O0 13 21 I/O7
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A11 1 32 OE
A9 2 31 A10
A8 3 30 CE
A13 4 29 I/O7
A14 5 28 I/O6
A17 6 27 I/O5
WE 7 26 I/O4
VCC 8 25 I/O3
NC 9 24 GND
A16 10 23 I/O2
A15 11 22 I/O1
A12 12 21 I/O0
A7 13 20 A0
A6 14 19 A1
A5 15 18 A2
A4 16 17 A3
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AT29C020
3. Block Diagram
4. Device Operation
4.1 Read
The AT29C020 is accessed like an EPROM. When CE and OE are low and WE is high, the data
stored at the memory location determined by the address pins is asserted on the outputs. The
outputs are put in the high impedance state whenever CE or OE is high. This dual-line control
gives designers flexibility in preventing bus contention.
4.3 Program
The device is reprogrammed on a sector basis. If a byte of data within a sector is to be changed,
data for the entire sector must be loaded into the device. Any byte that is not loaded during the
programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the
device, they are simultaneously programmed during the internal programming period. After the
first data byte has been loaded into the device, successive bytes are entered in the same man-
ner. Each new byte to be programmed must have its high-to-low transition on WE (or CE) within
150 µs of the low-to-high transition of WE (or CE) of the preceding byte. If a high-to-low transi-
tion is not detected within 150 µs of the last low-to-high transition, the load period will end and
the internal programming period will start. A8 to A17 specify the sector address. The sector
address must be valid during each high-to-low transition of WE (or CE). A0 to A7 specify the
byte address within the sector. The bytes may be loaded in any order; sequential loading is not
required. Once a programming operation has been initiated, and for the duration of tWC, a read
operation will effectively be a polling operation.
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shipped from Atmel, the software data protection feature is disabled. To enable the software
data protection, a series of three program commands to specific addresses with specific data
must be performed. After the software data protection is enabled the same three program com-
mands must begin each program cycle in order for the programs to occur. All software program
commands must obey the sector program timing specifications. Once set, the software data pro-
tection feature remains active unless its disable command is issued. Power transitions will not
reset the software data protection feature; however, the software feature will guard against inad-
vertent program cycles during power transitions.
After setting SDP, any attempt to write to the device without the 3-byte command sequence will
start the internal write timers. No data will be written to the device; however, for the duration of
tWC, a read operation will effectively be a polling operation.
After the software data protection’s 3-byte command code is given, a sector of data is loaded
into the device using the sector program timing specifications.
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AT29C020
4.9 Optional Chip Erase Mode
The entire device can be erased by using a 6-byte software code. Please see Software Chip
Erase application note for details.
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
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6. DC and AC Operating Range
AT29C020-70 AT29C020-90 AT29C020-10 AT29C020-12 AT29C020-15
Operating Com. 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C
Temperature (Case) Ind. -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C
VCC Power Supply 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10%
7. Operating Modes
Mode CE OE WE Ai I/O
Read VIL VIL VIH Ai DOUT
(2)
Program VIL VIH VIL Ai DIN
5V Chip Erase VIL VIH VIL Ai
(1)
Standby/Write Inhibit VIH X X X High Z
Program Inhibit X X VIH
Program Inhibit X VIL X
Output Disable X VIH X High Z
Product Identification
A1 - A17 = VIL, A9 = VH,(3) A0 = VIL Manufacturer Code(4)
Hardware VIL VIL VIH
A1 - A17 = VIL, A9 = VH, A0 = VIH Device Code(4)
A0 = VIL Manufacturer Code(4)
Software(5)
A0 = VIH Device Code(4)
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1F, Device Code: DA.
5. See details under Software Product Identification Entry/Exit.
8. DC Characteristics
Symbol Parameter Condition Min Max Units
ILI Input Load Current VIN = 0V to VCC 10 µA
ILO Output Leakage Current VI/O = 0V to VCC 10 µA
Com. 100 µA
ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC
Ind. 300 µA
ISB2 VCC Standby Current TTL CE = 2.0V to VCC 3 mA
ICC VCC Active Current f = 5 MHz; IOUT = 0 mA 40 mA
VIL Input Low Voltage 0.8 V
VIH Input High Voltage 2.0 V
VOL Output Low Voltage IOL = 2.1 mA 0.45 V
VOH1 Output High Voltage IOH = -400 µA 2.4 V
VOH2 Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V 4.2 V
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AT29C020
9. AC Read Characteristics
AT29C020-90 AT29C020-90 AT29C020-10 AT29C020-12 AT29C020-15
Symbol Parameter Min Max Min Max Min Max Min Max Min Max Units
tACC Address to Output Delay 0 70 0 90 100 120 150 ns
(1)
tCE CE to Output Delay 70 90 100 120 150 ns
tOE(2) OE to Output Delay 0 40 0 40 0 50 0 50 0 70 ns
tDF(3)(4) CE or OE to Output Float 0 25 0 25 0 25 0 30 0 40 ns
Output Hold from OE, CE
tOH or Address, whichever 0 0 0 0 0 ns
occurred first
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
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AT29C020
15.1 WE Controlled
15.2 CE Controlled
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16. Program Cycle Characteristics
Symbol Parameter Min Max Units
tWC Write Cycle Time 10 ms
tAS Address Set-up Time 0 ns
tAH Address Hold Time 50 ns
tDS Data Set-up Time 50 ns
tDH Data Hold Time 0 ns
tWP Write Pulse Width 90 ns
tBLC Byte Load Cycle Time 150 µs
tWPH Write Pulse Width High 100 ns
Notes: 1. A8 through A17 must specify the sector address during each high-to-low transition of WE (or CE).
2. OE must be high when WE and CE are both low.
3. All words that are not loaded within the sector being programmed will be indeterminate.
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21. Data Polling Characteristics(1)
Symbol Parameter Min Typ Max Units
tDH Data Hold Time 10 ns
tOEH OE Hold Time 10 ns
(2)
tOE OE to Output Delay ns
tWR Write Recovery Time 0 ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
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28. Ordering Information
28.1 Standard Package
tACC ICC (mA)
(ns) Active Standby Ordering Code Package Operation Range
AT29C020-70JC 32J Commercial
40 0.1
AT29C020-70TC 32T (0° to 70°C)
70
AT29C020-70JI 32J Industrial
40 0.3
AT29C020-70TI 32T (-40° to 85°C)
AT29C020-90JC 32J Commercial
40 0.1
AT29C020-90TC 32T (0° to 70°C)
90
AT29C020-90JI 32J Industrial
40 0.3
AT29C020-90TI 32T (-40° to 85°C)
AT29C020-10JC 32J Commercial
40 0.1
AT29C020-10TC 32T (0° to 70°C)
100
AT29C020-10JI 32J Industrial
40 0.3
AT29C020-10TI 32T (-40° to 85°C)
AT29C020-12JC 32J Commercial
40 0.1
AT29C020-12TC 32T (0° to 70°C)
120
AT29C020-12JI 32J Industrial
40 0.3
AT29C020-12TI 32T (-40° to 85°C)
AT29C020-15JC 32J Commercial
40 0.1
AT29C020-15TC 32T (0° to 70°C)
150
AT29C020-15JI 32J Industrial
40 0.3
AT29C020-15TI 32T (-40° to 85°C)
Package Type
32J 32-lead, Plastic J-leaded Chip Carrier (PLCC)
32T 32-lead, Thin Small Outline Package (TSOP)
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