DATA SHEET

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Silicon Carbide (SiC)

V(BR)DSS RDS(ON) MAX ID MAX
MOSFET – 12 mohm, 650 V, 650 V 18 m @ 18 V 163 A
M2, TO-247-3L
NVHL015N065SC1 N−CHANNEL MOSFET
D
Features
• Typ. RDS(on) = 12 m @ VGS = 18 V
Typ. RDS(on) = 15 m @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 283 nC) G
• High Speed Switching with Low Capacitance (Coss = 430 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable S

• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)

Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV G
D
• Automotive Traction Inverter S
TO−247−3LD
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) CASE 340CX
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 650 V
MARKING DIAGRAM
Gate−to−Source Voltage VGS −8/+22 V
Recommended Operation Values TC < 175°C VGSop −5/+18 V
of Gate−to−Source Voltage
Continuous Drain Steady TC = 25°C ID 163 A
Current (Note 1) State
HL015N
Power Dissipation PD 643 W 065SC1
(Note 1) $Y&Z&3&K
Continuous Drain Steady TC = 100°C ID 115 A
Current (Note 1) State
Power Dissipation PD 321 W
(Note 1)
Pulsed Drain Current TC = 25°C IDM 484 A
(Note 2) HL015N065SC1 = Specific Device Code
$Y = onsemi Logo
Single Pulse Surge TA = 25°C, tp = 10 s, IDSC 798 A &Z = Assembly Plant Code
Drain Current Capability RG = 4.7  &3 = Data Code (Year & Week)
Operating Junction and Storage Temperature TJ, Tstg −55 to °C &K = Lot
Range +175
Source Current (Body Diode) IS 157 A
Single Pulse Drain−to−Source Avalanche EAS 84 mJ ORDERING INFORMATION
Energy (IL(pk) = 13 A, L = 1 mH) (Note 3)
Maximum Lead Temperature for Soldering TL 300 °C Device Package Shipping
(1/8″ from case for 5 s)
NVHL015N065SC1 TO−247 30 Units /
Stresses exceeding those listed in the Maximum Ratings table may damage the Long Lead Tube
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A,
VDD = 50 V, VGS = 18 V.

© Semiconductor Components Industries, LLC, 2020 1 Publication Order Number:

May, 2022 − Rev. 3 NVHL015N065SC1/D
 NVHL015N065SC1

Table 1. THERMAL CHARACTERISTICS

Parameter Symbol Max Unit
Junction−to−Case − Steady State (Note 1) RJC 0.24 °C/W
Junction−to−Ambient − Steady State (Note 1) RJA 40

Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 − − V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = 20 mA, referenced to 25°C − 0.12 − V/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C − − 10 A
VDS = 650 V
TJ = 175°C − − 1 mA
Gate−to−Source Leakage Current IGSS VGS = +22/−8 V, VDS = 0 V − − 250 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 25 mA 1.8 2.63 4.3 V
Recommended Gate Voltage VGOP −5 − +18 V
Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 75 A, TJ = 25°C − 15 − m
VGS = 18 V, ID = 75 A, TJ = 25°C − 12 18
VGS = 18 V, ID = 75 A, TJ = 175°C − 16 −
Forward Transconductance gFS VDS = 10 V, ID = 75 A − 44 − S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 325 V − 4790 − pF
Output Capacitance COSS − 430 −
Reverse Transfer Capacitance CRSS − 33 −
Total Gate Charge QG(TOT) VGS = −5/18 V, VDS = 520 V, − 283 − nC
ID = 75 A
Gate−to−Source Charge QGS − 72 −
Gate−to−Drain Charge QGD − 64 −
Gate−Resistance RG f = 1 MHz − 1.6 − 
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −5/18 V, VDS = 400 V, − 25 − ns
ID = 75 A, RG = 2.2 
Rise Time tr Inductive load − 77 −
Turn−Off Delay Time td(OFF) − 47 −
Fall Time tf − 11 −
Turn−On Switching Loss EON − 1371 − J
Turn−Off Switching Loss EOFF − 470 −
Total Switching Loss Etot − 1841 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward ISD VGS = −5 V, TJ = 25°C − − 157 A
Current

Pulsed Source−Drain Diode Forward ISDM − − 484

Current (Note 2)

Forward Diode Voltage VSD VGS = −5 V, ISD = 75 A, TJ = 25°C − 4.6 − V

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 NVHL015N065SC1

Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)

Parameter Symbol Test Condition Min Typ Max Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/18 V, ISD = 75 A, − 33 − ns
dIS/dt = 1000 A/s
Reverse Recovery Charge QRR − 261 − nC
Reverse Recovery Energy EREC − 9.2 − J
Peak Reverse Recovery Current IRRM − 16 − A
Charge Time Ta − 19 − ns
Discharge Time Tb − 15 − ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 NVHL015N065SC1

TYPICAL CHARACTERISTICS

280 4
VGS = 18 V 15 V

RDS(on), NORMALIZED DRAIN−TO−

240

SOURCE ON−RESISTANCE
12 V
12 V
ID, DRAIN CURRENT (A)

3
200

160
2
10 V 15 V
120 18 V

80 9V
1
8V
40

0 0
0 2 4 6 8 10 0 40 80 120 160 200
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.6 120
ID = 75 A ID = 75 A
RDS(on), NORMALIZED DRAIN−TO−

RDS(on), ON−RESISTANCE (m)

VGS = 18 V 100
SOURCE RESISTANCE

1.4
80

1.2 60

40
1.0
TJ = 150°C
20

TJ = 25°C
0.8 0
−75 −50 −25 0 25 50 75 100 125 150 175 6 9 12 15 18
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source
Temperature Voltage
280
280
VDS = 10 V VGS = −5 V
IS, REVERSE DRAIN CURRENT (A)

240 100
ID, DRAIN CURRENT (A)

200 TJ = 175°C

160
TJ = 25°C
120 10
TJ = 175°C TJ = 25°C
80 TJ = −55°C

40
TJ = −55°C
0 1
3 6 9 12 15 2 4 6 8

VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current

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 NVHL015N065SC1

TYPICAL CHARACTERISTICS (continued)

20 10000
VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 75 A
Ciss
15
VDD = 650 V

CAPACITANCE (pF)
VDD = 390 V 1000
10

VDD = 520 V Coss

5
100

0
f = 1 MHz Crss
VGS = 0 V
−5
10
0 50 100 150 200 250 300 350 0.1 1 10 100 650
Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Gate−to−Source Voltage vs. Total Figure 8. Capacitance vs. Drain−to−Source

Charge Voltage
100 180
IAS, AVALANCHE CURRENT (A)

150
ID, DRAIN CURRENT (A)

VGS = 18 V
120
TJ = 25°C
10 90

60

30
RJC = 0.24°C/W
1 0
0.001 0.01 0.1 1 25 50 75 100 125 150 175
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain
Capability Current vs. Case Temperature

1000 100000
Single Pulse
P(PK), PEAK TRANSIENT POWER (W)

RJC = 0.24°C/W
10 s TC = 25°C
ID, DRAIN CURRENT (A)

100
10000
100 s
10

1 ms
1000
10 ms
1 Single Pulse
TJ = Max Rated
RJC = 0.24°C/W
TC = 25°C DC
0.1 100
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation

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 NVHL015N065SC1

r(t). NORMALIZED EFFECTIVE TRANSIENT

TYPICAL CHARACTERISTICS (continued)

2
1
0.5 Duty Cycle
THERMAL RESISTANCE

0.2
0.1
0.1 0.05
0.02
Notes:
0.01 P DM ZJC(t) = r(t) x RJC
Single Pulse
0.01 RJC = 0.24°C/W
Peak TJ = PDM x ZJC(t) + TC
t1
Duty Cycle, D = t1/t2
t2

0.001
0.00001 0.0001 0.001 0.01 0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020

GENERIC
MARKING DIAGRAM*

XXXXX = Specific Device Code

A = Assembly Location
Y = Year
WW = Work Week
XXXXXXXXX G = Pb−Free Package
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON93302G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD PAGE 1 OF 1

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