SCT2450KE

N-channel SiC power MOSFET Datasheet

Outline
TO-247
VDSS 1200V
RDS(on) (Typ.) 450m
ID 10A
PD 85W (1) (2)
(3)

Inner circuit
(2)
Features
1) Low on-resistance (1) Gate
(2) Drain
2) Fast switching speed *1 (3) Source
(1)

3) Fast reverse recovery

*1 Body Diode
4) Easy to parallel (3)

5) Simple to drive Packaging specifications

6) Pb-free lead plating ; RoHS compliant Packaging Tube
Reel size (mm) -

Application Tape width (mm) -

Type
• Solar inverters Basic ordering unit (pcs) 30

• DC/DC converters Packing code C

• Switch mode power supplies Marking SCT2450KE

• Induction heating
• Motor drives

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit
Drain - Source voltage VDSS 1200 V
Tc = 25°C ID *1 10 A
Continuous drain current
Tc = 100°C ID *1 7 A
Pulsed drain current ID,pulse *2 25 A
Gate - Source voltage (DC) VGSS 6 to 22 V
Gate - Source surge voltage (Tsurge ˂ 300nsec) VGSS-surge
*3
10 to 26 V
Power dissipation (Tc = 25°C) PD 85 W
Junction temperature Tj 175 °C
Range of storage temperature Tstg 55 to 175 °C

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SCT2450KE Datasheet

Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal resistance, junction - case RthJC - 1.36 1.77 °C/W

Thermal resistance, junction - ambient RthJA - - 50 °C/W

Soldering temperature, wavesoldering for 10s Tsold - - 265 °C

Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 1200 - - V
voltage

VDS = 1200V, VGS = 0V

Zero gate voltage
IDSS Tj = 25°C - 1 10 A
drain current
Tj = 150°C - 2 -

Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS VGS = 6V, VDS = 0V - - 100 nA

Gate threshold voltage VGS (th) VDS = VGS, ID = 0.9mA 1.6 2.8 4.0 V

*1 Limited only by maximum temperature allowed.

*2 PW  10s, Duty cycle  1%

*3 Example of acceptable Vgs waveform

*4 Pulsed

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SCT2450KE Datasheet

Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 18V, ID = 3A
Static drain - source
RDS(on) *4 Tj = 25°C - 450 585 m
on - state resistance
Tj = 125°C - 610 -

Gate input resistance RG f = 1MHz, open drain - 25 - 

*4
Transconductance gfs VDS = 10V, ID = 3A - 1.0 - S

Input capacitance Ciss VGS = 0V - 463 -

Output capacitance Coss VDS = 800V - 21 - pF

Reverse transfer capacitance Crss f = 1MHz - 4 -

Effective output capacitance, VGS = 0V

Co(er) - 31 - pF
energy related VDS = 0V to 500V
*4
Turn - on delay time td(on) VDD = 400V, VGS = 18V - 19 -

Rise time tr *4 ID = 3A - 17 -
ns
*4
Turn - off delay time td(off) RL = 133 - 38 -
*4
Fall time tf RG = 0 - 34 -

*4 VDD = 600V, ID=3A

Turn - on switching loss Eon - 47 -
VGS = 18V/0V
RG = 0, L=500H J
*4 *Eon includes diode
Turn - off switching loss Eoff - 17 -
reverse recovery

Gate Charge characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
*4
Total gate charge Qg VDD = 400V - 27 -
*4
Gate - Source charge Qgs ID = 3A - 7 - nC
*4
Gate - Drain charge Qgd VGS = 18V - 9 -

Gate plateau voltage V(plateau) VDD = 400V, ID = 3A - 10.5 - V

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SCT2450KE Datasheet

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Inverse diode continuous, *1

IS - - 10 A
forward current
Tc = 25°C
Inverse diode direct current,
ISM *2 - - 25 A
pulsed
*4
Forward voltage VSD VGS = 0V, IS = 3A - 4.3 - V
*4
Reverse recovery time trr - 19 - ns
*4 IF = 3A, VR = 400V
Reverse recovery charge Qrr - 13 - nC
di/dt = 110A/s
*4
Peak reverse recovery current Irrm - 1.4 - A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
Rth1 230m Cth1 219
Rth2 687m K/W Cth2 1.29m Ws/K
Rth3 441m Cth3 13.1m

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

90 100
PW = 100s
80
Power Dissipation : PD [W]

70 PW = 1ms
10

Drain Current : ID [A]

PW = 10ms
60
PW = 100ms
50
1
40

30 Operation in this area

is limited by RDS(on)
0.1
20

10 Ta=25ºC
Single Pulse
0 0.01
0 50 100 150 200 0.1 1 10 100 1000 10000

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
10
Transient Thermal Resistance : Rth [K/W]

Ta=25ºC
Single Pulse

0.1

0.01
0.0001 0.001 0.01 0.1 1 10

Pulse Width : PW [s]

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

10 5
20V 20V 14V
18V 18V
8 4
16V 14V 16V

Drain Current : ID [A]

12V
Drain Current : ID [A]

Ta=25ºC
6 Pulsed 3

12V
4 2 10V

VGS= 8V
10V
2 1
Ta=25ºC
VGS= 8V Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150°C Typical Output Fig.7 Tj = 150°C Typical Output

Characteristics(I) Characteristics(II)
10 5
Ta=150ºC 20V 20V
Pulsed
18V 18V
8 4
16V 12V
16V
Drain Current : ID [A]
Drain Current : ID [A]

14V
14V 12V 10V
6 3

4 10V
2
VGS= 8V

2 VGS= 8V 1
Ta=150ºC
Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II)

10 10
VDS= 10V VDS= 10V
Plused 9
Plused
8
1

Drain Current : ID [A]

Drain Current : ID [A]

6
Ta=150ºC
0.1 Ta=75ºC 5
Ta=25ºC 4
Ta= 25ºC Ta=150ºC
3 Ta=75ºC
0.01 Ta=25ºC
2 Ta= 25ºC
1

0.001 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltage Fig.11 Transconductance vs. Drain Current

vs. Junction Temperature
5 10
VDS = 10V VDS= 10V
Gate Threshold Voltage : VGS(th) [V]

4.5
ID = 1mA Plused
4
Transconductance : gfs [S]

3.5
1
3

2.5

2
0.1
1.5 Ta=150ºC
Ta=75ºC
1 Ta=25ºC
0.5 Ta= 25ºC

0 0.01
-50 0 50 100 150 200 0.01 0.1 1 10

Junction Temperature : Tj [°C] Drain Current : ID [A]

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.12 Static Drain - Source On - State Fig.13 Static Drain - Source On - State
Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature
1.4 1
Static Drain - Source On-State Resistance

Static Drain - Source On-State Resistance

Ta=25ºC VGS= 18V
Pulsed 0.9
1.2 Plused
0.8
1 0.7 ID = 6A
: RDS(on) []

: RDS(on) []
ID = 6A 0.6
0.8
0.5
0.6 ID = 3A
ID = 3A 0.4

0.4 0.3

0.2
0.2
0.1

0 0
6 8 10 12 14 16 18 20 22 -50 0 50 100 150 200

Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current
10
Static Drain - Source On-State Resistance

VGS= 18V
Plused
: RDS(on) []

Ta=150ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.1
0.1 1 10 100

Drain Current : ID [A]

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.15 Typical Capacitance Fig.16 Coss Stored Energy

vs. Drain - Source Voltage
10000 10

9 Ta=25ºC

Coss Stored Energy : EOSS [J]

8
1000
Capacitance : C [pF]

Ciss
7

100 5
Coss
4

3
10 Crss
Ta=25ºC 2
f = 1MHz 1
VGS = 0V
1 0
0.1 1 10 100 1000 0 200 400 600 800

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics

10000 20
Ta = 25ºC Ta = 25ºC
VDD = 400V VDD= 400V
Gate - Source Voltage : VGS [V]

tf VGS = 18V ID= 3A

RG= 0 Pulsed
Switching Time : t [ns]

1000 15
Pulsed
td(off)

100 10

td(on)

10 5
tr

1 0
0.1 1 10 100 0 5 10 15 20 25 30

Drain Current : ID [A] Total Gate Charge : Qg [nC]

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.19 Typical Switching Loss Fig.20 Typical Switching Loss

vs. Drain - Source Voltage vs. Drain Current
100 300
Ta = 25ºC Ta = 25ºC
90 ID= 3A VDD= 600V
VGS = 18V/0V 250 VGS = 18V/0V
80

Switching Energy : E [J]

Switching Energy : E [J]

RG= 0 RG= 0
70 L=500H L=500H
200
Eon
60
Eon
50 150

40
100
30
Eoff
20 Eoff
50
10

0 0
0 200 400 600 800 1000 0 2 4 6 8 10 12

Drain - Source Voltage : VDS [V] Drain Current : ID [A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance
120
110 Ta = 25ºC
VDD= 600V
100 ID= 3A
Switching Energy : E [J]

90 VGS = 18V/0V Eon

L=500H
80
70
60
50
40
30 Eoff
20
10
0
0 5 10 15 20 25 30

External Gate Resistance : RG []

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SCT2450KE Datasheet

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
10 1000
Inverse Diode Forward Current : IS [A]

VGS=0V Ta=25ºC
di / dt = 110A / s

Reverse Recovery Time : trr [ns]

Pulsed
VR = 400V
VGS = 0V
Pulsed
1

100

0.1 Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC

0.01 10
0 1 2 3 4 5 6 7 8 1 10

Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]

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SCT2450KE Datasheet

Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

VGS Pulse width

ID
VDS
RL 50% 90% 50%
VGS 10%
D.U.T.
VDS
10% 10%
RG VDD

90% 90%
td(on) tr td(off) tf

ton toff

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

VGS VG
ID
VDS
RL Qg

IG(Const.) D.U.T. VGS

VDD Qgs Qgd

Charge

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Eon = ID×VDS Eoff = ID×VDS

Same type
D.U.T. L Vsurge
device as
IF Irr
D.U.T. VDS
VDD
DRIVER
D.U.T.
MOSFET
RG

ID
ID

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

IF
D.U.T. L trr
D.U.T.
IF
0
VDD Irr 10%
DRIVER
MOSFET Irr
RG drr / dt

Irr 90%
Irr 100%

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 Notice

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R1102S
 Datasheet

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