Date:- 13 May, 2003

Data Sheet Issue:- 1

Distributed Gate Thyristor

Type R3370ZC10# to R3370ZC12#
Old Type No.: R1200CH10-12
Absolute Maximum Ratings

MAXIMUM
VOLTAGE RATINGS UNITS
LIMITS
VDRM Repetitive peak off-state voltage, (note 1) 1000-1200 V
VDSM Non-repetitive peak off-state voltage, (note 1) 1000-1200 V
VRRM Repetitive peak reverse voltage, (note 1) 1000-1200 V
VRSM Non-repetitive peak reverse voltage, (note 1) 1100-1300 V

MAXIMUM
OTHER RATINGS UNITS
LIMITS
IT(AV)M Maximum mean on-state current, Tsink=55°C, (note 2) 3370 A
IT(AV)M Maximum mean on-state current. Tsink=85°C, (note 2) 2145 A
IT(AV)M Maximum mean on-state current. Tsink=85°C, (note 3) 1179 A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2) 6850 A
IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 5360 A
ITSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 43.9 kA
ITSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 48.3 kA
2 2 6 2
It I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) 9.64×10 As
2 2 6 2
It I t capacity for fusing tp=10ms, VRM≤10V, (note 5) 11.66×10 As
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
diT/dt
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
VRGM Peak reverse gate voltage 5 V
PG(AV) Mean forward gate power 5 W
PGM Peak forward gate power 50 W
THS Operating temperature range -40 to +125 °C
Tstg Storage temperature range -40 to +150 °C

Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 1 of 12 May, 2003

 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 1.54 ITM=4000A V

VTM Maximum peak on-state voltage - - 1.95 ITM=10100A V
V0 Threshold voltage - - 1.353 V
rS Slope resistance - - 0.064 mΩ
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% VDRM, Linear ramp, Gate o/c V/µs
IDRM Peak off-state current - - 300 Rated VDRM mA
IRRM Peak reverse current - - 300 Rated VRRM mA
VGT Gate trigger voltage - - 3.0 V
Tj=25°C VD=10V, IT=3A
IGT Gate trigger current - - 300 mA
VGD Non-trigger gate voltage - - 0.25 Rated VDRM V
IH Holding current - - 1000 Tj=25°C mA
tgd Gate controlled turn-on delay time - 0.7 1.5 VD=67% VDRM, ITM=1000A, di/dt=60A/µs,
µs
tgt Turn-on time - 1.5 3.0 IFG=2A, tr=0.5µs, Tj=25°C

Qrr Recovered charge - 600 - µC

Qra Recovered charge, 50% Chord - 240 300 ITM=4000A, tp=1000µs, di/dt=60A/µs, µC
Irm Reverse recovery current - 135 - Vr=50V A
trr Reverse recovery time - 3.5 - µs
ITM=4000A, tp=1000µs, di/dt=60A/µs,
12 - 20
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
tq Turn-off time (note 2) µs
ITM=4000A, tp=1000µs, di/dt=60A/µs,
15 - 25
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
- - 0.011 Double side cooled K/W
Rth(j-hs) Thermal resistance, junction to heatsink
- - 0.022 Single side cooled K/W
F Mounting force 27 - 47 kN
Wt Weight - 1.7 - kg

Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information
for details of tq codes.

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 2 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

VDRM VDSM VRRM VRSM VD VR

Voltage Grade
V V DC V
10 1000 1100 700
12 1200 1300 810

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

IGM

4A/µs
IG

tp1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
9.0 Frequency Ratings

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 3 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.

1
f max =
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let RthJK be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.

Then the average dissipation will be:

W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ RthJK )

14.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1

(ii) Qrr is based on a 150µs integration time i.e. 150 µs

Qrr = ∫i
0
rr .dt
(iii)
t1
K Factor =
t2
15.0 Reverse Recovery Loss

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 4 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

TSINK ( new) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) )

Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:

W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz

TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f )

Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:

Vr Vr = Commutating source voltage

R2 = 4 ⋅ Where: CS = Snubber capacitance
CS ⋅ di dt R = Snubber resistance

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 5 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

16.0 Computer Modelling Parameters

16.1 Calculating VT using ABCD Coefficients

The on-state characteristic IT vs VT, on page 7 can be represented in two ways;

(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:

VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.

25°C Coefficients 125°C Coefficients

A 2.2410365 A 1.1854785
-3
B -6.580221×10 B 0.08935579
-4 -4
C 1.055932×10 C 1.484966×10
-3
D -5.499580×10 D -0.01550443

16.2 D.C. Thermal Impedance Calculation

p=n  −t

rt = ∑ rp ⋅ 1 − e p 
τ
 
p =1
 
Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.

D.C. Single Side Cooled

Term 1 2 3 4 5 6
-3 -3 -4 -4 -4
rp 0.0142 2.34×10 3.39×10 8.87×10 6.00×10 4.66×10
-3
τp 9.25 2.07957 0.23675 0.07935 0.0107 2.89×10

D.C. Double Side Cooled

Term 1 2 3 4
-3 -3 -3 -4
rp 5.60×10 2.81×10 1.42×10 9.34×10
-3
τp 1.593884 0.28583 0.07721 4.84×10

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 6 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000 0.1
R3370ZC10#-12#
R3370ZC10#-12#
Issue 1
Issue 1

Tj = 125°C Tj = 25°C SSC 0.022K/W

0.01
DSC 0.011K/W
(A)

Transient Thermal Impedance - Z (th)t (K/W)

T
Instantaneous on-state current - I

1000
0.001

0.0001

100
0.00001
0 0.5 1 1.5 2 2.5 3
0.0001 0.001 0.01 0.1 1 10 100
Instantaneous on-state voltage - VT (V)
Time (s)

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
7 20
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1
Tj=25°C Tj=25°C
18
6

16

Max VG dc
5 14
Max VG dc
Gate Trigger Voltage - VGT (V)
Gate Trigger Voltage - VGT (V)

12
4

IGT, VGT 10

3
8

PG Max 30W dc
6
2
-10°C

-40°C
125°C

25°C

PG 5W dc
4

1 Min VG dc Min VG dc

IGD, VGD 2

0 0
0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10
Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A)

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 7 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord)
10000 10000
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1

Tj = 125°C Tj = 125°C

4kA
1000 3kA
Total recovered charge - Q rr (µC)

2kA

Recovered charge - Q ra (µC)

1kA
4kA
3kA
2kA
1kA
1000

100

100 10
10 100 1000 10 100 1000
Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, Irm Figure 8 - Maximum recovery time, trr (50% chord)
1000 10
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1

Tj = 125°C Tj = 125°C
4kA
3kA
2kA
1kA
Reverse recovery current - I rm (A)

Reverse recovery time - t rr (µs)

4kA
100 3kA
2kA
1kA

1
10
10 100 1000
10 100 1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 8 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
1000 1.00E+02
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1
Vrm =0.67%VDRM Tj=125°C
Tj = 125°C
Snubber
0.5µF, 6Ω
4kA
1.00E+01
3kA

8kA
2kA
Energy per pulse - E r (J)

Energy per pulse (J)

6kA

1.00E+00 4kA
1kA

2kA

1.00E-01

1kA

500A

100 1.00E-02
10 100 1000 1.00E-05 1.00E-04 1.00E-03 1.00E-02

Commutation rate - di/dt (A/µs) Pulse width (s)

Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings
1.00E+05 1.00E+05
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 1kA Issue 1

THs=55°C THs=85°C

100% Duty Cycle

100% Duty Cycle
2kA

1.00E+04 1.00E+04
2kA

4kA
Frequency (Hz)
Frequency (Hz)

4kA
1.00E+03 6kA 1.00E+03

8kA 6kA

8kA

1.00E+02 1.00E+02

1.00E+01 1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (s) Pulse width (s)

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 9 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05 1.00E+05
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1
1kA
di/dt=100A/µs di/dt=500A/µs
THs=55°C THs=55°C

2kA
100% Duty Cycle 100% Duty Cycle
1.00E+04 1.00E+04 2kA

4kA
4kA

6kA

Frequency (Hz)
Frequency (Hz)

6kA

1.00E+03 8kA 1.00E+03

8kA

1.00E+02 1.00E+02

1.00E+01 1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s) Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05 1.00E+05
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1
di/dt=100A/µs di/dt=500A/µs
1kA
THs=85°C THs=85°C

1kA
100% Duty Cycle
100% Duty Cycle
1.00E+04 2kA 1.00E+04

2kA

4kA
Frequency (Hz)

Frequency (Hz)

4kA
1.00E+03 6kA 1.00E+03
6kA
8kA

8kA

1.00E+02 1.00E+02

1.00E+01 1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s) Pulse width (s)

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 10 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03 1.00E+03
R3370ZC10#-12# R3370ZC10#-12#
Issue 1 Issue 1
di/dt=100A/µs di/dt=500A/µs
Tj=125°C Tj=125°C

1.00E+02 1.00E+02

8kA
6kA
4kA

1.00E+01 1.00E+01
Energy per pulse (J)

Energy per pulse (J)

8kA

6kA

4kA
1.00E+00 1.00E+00
2kA
1kA
2kA 500A

1.00E-01 1.00E-01
1kA

500A

1.00E-02 1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s) Pulse width (s)

2
Figure 19 - Maximum surge and I t Ratings
Gate may temporarily lose control of conduction angle
1000000 1.00E+08
R3370ZC10#-12#
I2t: VRRM≤10V
Issue 1
2
I t: 60% VRRM
Total peak half sine surge current - I TSM (A)

Tj (initial) = 125°C

Maximum I2t (A2s)

100000 1.00E+07

ITSM: VRRM≤10V

ITSM: 60% VRRM

10000 1.00E+06
1 3 5 10 1 5 10 50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 11 of 12 May, 2003

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12

Outline Drawing & Ordering Information

101A281
ORDERING INFORMATION (Please quote 10 digit code as below)

R3370 ZC ♦♦ #
Fixed Fixed Fixed Voltage Code tq Code
Type Code Outline Code VDRM/100 C=15µs, D=20µs, E=25µs
10-12
Typical order code: R3370ZC12D – 1200V VDRM, VRRM, 20µs tq, 37.7mm clamp height capsule.

IXYS Semiconductor GmbH Westcode Semiconductors Ltd

Edisonstraße 15 Langley Park Way, Langley Park,
D-68623 Lampertheim Chippenham, Wiltshire, SN15 1GE.
Tel: +49 6206 503-0 Tel: +44 (0)1249 444524
Fax: +49 6206 503-627 Fax: +44 (0)1249 659448
E-mail: marcom@ixys.de E-mail: WSL.sales@westcode,com

IXYS Corporation Westcode Semiconductors Inc

3540 Bassett Street 3270 Cherry Avenue
Santa Clara CA 95054 USA www.westcode.com Long Beach CA 90807 USA
Tel: +1 (408) 982 0700 Tel: +1 (562) 595 6971
Fax: +1 (408) 496 0670 Fax: +1 (562) 595 8182
E-mail: sales@ixys.net www.ixys.com E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed © Westcode Semiconductors Ltd.
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.

Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 12 of 12 May, 2003