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    Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

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    kurt.ccobainee
    This document provides specifications for the 2N6475 and 2N6476 silicon PNP power transistors. It details the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics, and packaging. The transistors are in a TO-220 package and intended for general-purpose medium power switching and amplifier applications.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    kurt.ccobainee
    12 views3 pages
    This document provides specifications for the 2N6475 and 2N6476 silicon PNP power transistors. It details the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics, and packaging. The transistors are in a TO-220 package and intended for general-purpose medium power switching and amplifier applications.

    Original Title

    2n6475_2n6476

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    This document provides specifications for the 2N6475 and 2N6476 silicon PNP power transistors. It details the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics, and packaging. The transistors are in a TO-220 package and intended for general-purpose medium power switching and amplifier applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    12 views3 pages

    Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    kurt.ccobainee
    This document provides specifications for the 2N6475 and 2N6476 silicon PNP power transistors. It details the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics, and packaging. The transistors are in a TO-220 package and intended for general-purpose medium power switching and amplifier applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2N6475 2N6476

    DESCRIPTION
    ·With TO-220 package
    ·Low collector saturation voltage
    ·Excellent safe operating area

    APPLICATIONS
    ·General-purpose medium power for
    switching and amplifier applications

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base

    3 Base Fig.1 simplified outline (TO-220) and symbol

    Absolute maximum ratings(Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    2N6475 -110
    VCBO Collector-base voltage Open emitter V
    2N6476 -130

    2N6475 -100
    VCEO Collector-emitter voltage Open base V
    2N6476 -120

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -4 A

    IB Base current -2 A

    PT Total power dissipation TC=25℃ 40 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -65~150 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal resistance from junction to case 3.125 ℃/W


    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2N6475 2N6476

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    2N6475 -100
    Collector-emitter
    VCEO(SUS) IC=-0.1A ;IB=0 V
    sustaining voltage
    2N6476 -120

    VCEsat-1 Collector-emitter saturation voltage IC=-1.5A;IB=-0.15A -1.2 V

    VCEsat-2 Collector-emitter saturation voltage IC=-4A;IB=-2A -2.5 V

    VBE-1 Base-emitter on voltage IC=-1.5A ; VCE=-4V -2.0 V

    VBE-2 Base-emitter on voltage IC=-4A ; VCE=-2.5V -3.5 V

    VCE=-100V;VBE=-1.5V -0.1
    2N6475
    TC=100℃ -2.0
    ICEX Collector cut-off current mA
    VCE=-120V;VBE=-1.5V -0.1
    2N6476
    TC=100℃ -2.0

    2N6475 VCE=-50V;IB=0
    ICEO Collector cut-off current -1.0 mA
    2N6476 VCE=-60V;IB=0

    IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA

    hFE-1 DC current gain IC=-1.5A ; VCE=-4V 15 150

    hFE-2 DC current gain IC=-4A ; VCE=-2.5V 2

    COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF

    2N6475 4
    fT Transition frequency IC=-0.5A ; VCE=-4V MHz
    2N6476 5

    2
    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2N6475 2N6476

    PACKAGE OUTLINE

    Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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