Scribd Logo
Upload

Welcome to Scribd!

  • 203 views

    Datasheet PDF

    Uploaded by

    Ibrain Moran
    This document provides product specifications for the 2SA1441 silicon PNP power transistor from INCHANGE Semiconductor. It lists the transistor's key electrical characteristics including a collector-emitter sustaining voltage of -60V minimum, DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage, and saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. The transistor is intended for use in high-speed switching applications such as DC/DC converters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Datasheet PDF

    Uploaded by

    Ibrain Moran
    203 views2 pages
    This document provides product specifications for the 2SA1441 silicon PNP power transistor from INCHANGE Semiconductor. It lists the transistor's key electrical characteristics including a collector-emitter sustaining voltage of -60V minimum, DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage, and saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. The transistor is intended for use in high-speed switching applications such as DC/DC converters.

    Original Title

    datasheet (3).pdf

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides product specifications for the 2SA1441 silicon PNP power transistor from INCHANGE Semiconductor. It lists the transistor's key electrical characteristics including a collector-emitter sustaining voltage of -60V minimum, DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage, and saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. The transistor is intended for use in high-speed switching applications such as DC/DC converters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    203 views2 pages

    Datasheet PDF

    Uploaded by

    Ibrain Moran
    This document provides product specifications for the 2SA1441 silicon PNP power transistor from INCHANGE Semiconductor. It lists the transistor's key electrical characteristics including a collector-emitter sustaining voltage of -60V minimum, DC current gain of 100 minimum at -1A collector current and -2V collector-emitter voltage, and saturation voltage of 0.3V maximum at -3A collector current and -0.15A base current. The transistor is intended for use in high-speed switching applications such as DC/DC converters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Power Transistor 2SA1441

    DESCRIPTION
    ·Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= -60V(Min)
    ·High DC Current Gain-
    : hFE= 100(Min)@ (VCE= -2V , IC= -1A)
    ·Low Saturation Voltage-
    : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)

    APPLICATIONS
    ·This type of power transistor is developed for high-speed
    switching and features a high hFE at low VCE(sat),which is
    ideal for use as a driver in DC/DC converters and actuators.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage -100 V

    VCEO Collector-Emitter Voltage -60 V

    VEBO Emitter-Base Voltage -7.0 V

    IC Collector Current-Continuous -5.0 A

    ICM Collector Current-Pulse -10 A

    IB Base Current-Continuous -2.5 A

    Total Power Dissipation @TC=25℃ 25


    PT W
    Total Power Dissipation @Ta=25℃ 2.0

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor isc Product Specification

    isc Silicon PNP Power Transistor 2SA1441

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L= 1mH -60 V

    IC= -3.0A ; IB1=-IB2= -0.3A,


    VCEX(SUS) Collector-Emitter Sustaining Voltage -60 V
    VBE(OFF)=1.5V, L=180μ H,clamped

    VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A -0.3 V

    VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A -0.5 V

    VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A -1.2 V

    VBE(sat)-2 Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A -1.5 V

    ICBO Collector Cutoff Current VCB= -60V ; IE=0 -10 μ A

    ICER Collector Cutoff Current VCE= -60V ; RBE= 50Ω ,Ta=125℃ -1.0 mA

    VCE= -60V; VBE(off)= -1.5V -10 μ A


    ICEX Collector Cutoff Current
    VCE= -60V; VBE(off)= -1.5V,Ta=125℃ -1.0 mA

    IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μ A

    hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 100

    hFE-2 DC Current Gain IC= -1.0A ; VCE= -2V 100 400

    hFE-3 DC Current Gain IC= -3.0A ; VCE= -2V 60

    COB Output Capacitance IE=0; VCB= -10V;f= 1.0MHz 130 pF

    fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 80 MHz

    Switching times

    ton Turn-on Time 0.3 μ s

    IC= -3.0A ,RL= 17Ω ,


    tstg Storage Time 1.5 μ s
    IB1= -IB2= -0.15A,VCC≈-50V

    tf Fall Time 0.3 μ s

     hFE-2 Classifications
    M L K

    100-200 150-300 200-400

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy