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    Basic SC Physics - DPP 04 (Of Lec 15 & 16)

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    Abhishek Singh
    The document provides a discussion of basic semiconductor physics concepts through multiple choice and numerical questions. It tests understanding of key ideas like Fermi level, doping, carrier concentration and probability. Questions relate to n-type and p-type semiconductors, and how properties change with doping concentration and applied fields.

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    © All Rights Reserved
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    Basic SC Physics - DPP 04 (Of Lec 15 & 16)

    Uploaded by

    Abhishek Singh
    12 views3 pages
    The document provides a discussion of basic semiconductor physics concepts through multiple choice and numerical questions. It tests understanding of key ideas like Fermi level, doping, carrier concentration and probability. Questions relate to n-type and p-type semiconductors, and how properties change with doping concentration and applied fields.

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    Basic SC Physics _ DPP 04 (Of Lec 15 & 16)

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    The document provides a discussion of basic semiconductor physics concepts through multiple choice and numerical questions. It tests understanding of key ideas like Fermi level, doping, carrier concentration and probability. Questions relate to n-type and p-type semiconductors, and how properties change with doping concentration and applied fields.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    12 views3 pages

    Basic SC Physics - DPP 04 (Of Lec 15 & 16)

    Uploaded by

    Abhishek Singh
    The document provides a discussion of basic semiconductor physics concepts through multiple choice and numerical questions. It tests understanding of key ideas like Fermi level, doping, carrier concentration and probability. Questions relate to n-type and p-type semiconductors, and how properties change with doping concentration and applied fields.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 3

    1

    ECE Batch : Hinglish

    Subject : Electronics Device & Circuits DPP - 04

    Chapter : Basic Semiconductor Physics

    [MCQ]
    1. In a SC, probability of finding a hole at an energy [MCQ]
    level E1 ( E1  EF ) will be 5. In a doped-SC, following information is given EF –
    (a) 1/2 EFi = – 0.3 eV, then concentration of electrons and
    holes in the SC is :
    (b) < 1/2
    Given : kT/q = 0.025 volt.
    (c) > 1/2
    (a) n = 1.63 × 105 ni , p = 6.14 × 10–6 ni
    (d) Can’t be determine as E1 is not known
    (b) n = 6.14 × 10–6 ni , p = 1.63 × 105 ni
    (c) n = ni , p = 12 ni
    [MCQ]
    (d) n = 12 ni , p = ni
    2. In a doped SC if we add pentavalent impurities then
    fermi level moves :
    (a) In upward direction always [MCQ]
    (b) In downward direction always 6. Fermi level diagram of a SC is given as :

    (c) Can’t be determine as SC is not known


    (d) None of these

    [NAT]
    3. Across a sample of n-type SC, electric field of E =
    104 V/cm is applied. Doping concentration ND = 1016 Initial doping concentration is N1.Now it is doped
    /cm3 and saturation velocity of charge carrier is 107 with acceptor impurities of concentration N2 such
    cm/sec. Then the value of current density [kA/cm2] that new fermi level position is as given below :
    in SC is ____________.
    Given: [ Mobility of electrons = 1350 cm2/V-sec]

    [MCQ]
    4. In a SC fermi level lies above the mid of the band
    gap, then which of the following is true ? Then the relation between N2 and N1 is

    (a) It is n-type SC with f (EV + Eg / 2) > 1/2 (a) N1 = N2

    (b) It is p-type SC with f (EV + Eg / 2) < 1/2 (b) N2 > N1

    (c) It is n-type SC with f (EV + Eg / 2) = 1/2 (c) N2 < N1

    (d) It is intrinsic SC with f (EV + Eg / 2) = 1/2 (d) N2 = 1.5 N1


    2

    (d) Four times the initial dopant concentration


    [MCQ] [NAT]
    7. Fermi Dirac distribution function f (E) is plotted 9. Fermi level diagram of a doped SC is given as :
    against energy level E at different temperature as
    shown below :

    The probability of finding a hole an energy level E1


    will be _________ [up to four decimal places]

    Then which of the following is true :


    [NAT]
    (a) At point A, f (E) = 1/2, & at f ( E ) A1  f ( E ) A2 10. Fermi level diagram of a doped-SC is as given below
    (b) At point A, f(E) > 1/2, & Doping concentration is N1 in SC.
    f ( E ) A1  f ( E ) A2  1/ 2

    (c) At point A, f(E) = 1/2, &


    f ( E ) A1 = f ( E ) A2  1/ 2

    (d) At point A, f(E) < 1/2, &


    f ( E ) A1  f ( E ) A2  1/ 2

    To shift fermi level to EF’ which is 7/20 Eg eV above


    [MCQ] Ei , impurity added is N2 cm3. Then the ratio of N2 /
    8. Fermi level diagram of doped SC is given below : N1 is _________.

    To change the position of fermi level to EF’ which


    is 0.3 eV above valance band. The new dopant
    concentration added will be
    (a) Equal to initial dopant concentration
    (b) Double of initial dopant concentration
    (c) Half of initial dopant concentration
    3

    Answer Key
    1. (b) 6. (b)
    2. (a) 7. (c)
    3. (16) 8. (b)
    4. (a) 9. (0.0470 to 0.0480)
    5. (b) 10. (3.000 to 3.018)

    Any issue with DPP, please report by clicking here:- https://forms.gle/t2SzQVvQcs638c4r5


    For more questions, kindly visit the library section: Link for web: https://smart.link/sdfez8ejd80if

    PW Mobile APP: https://smart.link/7wwosivoicgd4

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