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EEE 2212 Assignment 1 February 2024

The document discusses semiconductor doping and carrier concentrations. It provides equations to calculate work functions and carrier concentrations for intrinsic, n-type, and p-type semiconductors. It then applies these equations to examples involving silicon doped with different dopant concentrations to determine conductivity type and carrier concentrations.

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28 views

EEE 2212 Assignment 1 February 2024

The document discusses semiconductor doping and carrier concentrations. It provides equations to calculate work functions and carrier concentrations for intrinsic, n-type, and p-type semiconductors. It then applies these equations to examples involving silicon doped with different dopant concentrations to determine conductivity type and carrier concentrations.

Uploaded by

ridanhawy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Jomo Kenyatta University of Agriculture and Technology

Department of Electrical and Electronics Engineering


EEE 2212 Assignment 1: February 2024
The concentration of electrons and holes in a semiconductor that is not degenerately doped can be expressed
in terms of the effective density of states and the Boltzmann distribution function as:
 For electrons in the conduction band:  The holes in the valence band:
−(𝐸𝐶 −𝐸𝐹 )⁄ −(𝐸𝐹 −𝐸𝑉 )
⁄𝑘𝑇
𝑛 = 𝑁𝐶 𝑒 𝑘𝑇 1 𝑝 = 𝑁𝑉 𝑒 2
1. For an intrinsic semiconductor with intrinsic carrier concentration ni, an N-type semiconductor with
donor concentration Nd and P-Type semiconductor with acceptable concentration Na:
a. Sketch side by side the three energy band diagrams indicating:
i. The vacuum level, the Fermi levels and the the energy levels EV and EC.
ii. The band-gap energy (qEg), the work functions (qφi qφN,qφP)and the electron affinity (qχ).
(NOTE: The energy differences are indicated multiplied by q in order to get the correct formula
for results in electron volts).
𝐸𝑔 𝑘𝑇 𝑁
b. For N-Type semiconductor, show that: 𝜑𝑁 = 𝜒 + − ln ( 𝑑 ). (HINT: Rewrite equation 1 for
2 𝑞 𝑛𝑖

intrinsic semiconductor (replacing n with ni) then for N-Type semiconductor (replacing n with Nd)
and solve the two equations for (EFN – EFi), eliminating EC).
𝐸𝑔 𝑘𝑇 𝑁
c. For P-Type semiconductor, show that: 𝜑𝑃 = 𝜒 + + ln ( 𝑎). (HINT: Rewrite equation 2 for
2 𝑞 𝑛𝑖

intrinsic semiconductor (replacing p with ni) then for P-Type semiconductor (replacing p with Na)
and solve the two equations for (EFi – EFP), eliminating EV).
For (b) and (c), assume: (EC – EFi)= qEg/2; (EFi – EV)= qEg/2.
d. Using the results in (b) and (c) above:
i. Derive an expression for the differences in work function between and N-type and P-type
semiconductor.
ii. What does the result in (d(i)) represent in a P-N junction?
2. For silicon at 300K, ni = 1 × 1010 cm-3; Eg = 1.12eV; χ = 4.05ev. Also at 300K, kT/q = 0.0259V.
a. Evaluate the work function for the intrinsic silicon
b. Evaluate the range of possible values for the work function of the N-type silicon
c. Evaluate the range of possible values for the work function of the P-type silicon.
3. A piece of silicon is doped with 2 × 1016 cm-3 of gallium atoms.
a. State and explain the conductivity of the semiconductor. (P-Type or N-Type)
b. Evaluate the carrier concentrations for holes and electrons in the doped semiconductor.
c. The semiconductor is further doped with 2.5 × 1016 cm-3 of phosphorous atoms.
i. State and explain the conductivity of the semiconductor.
ii. Evaluate the carrier concentrations for holes and electrons in the doped semiconductor.
d. A different piece of silicon is doped with 5 × 1015 cm-3 of phosphorous atoms only. Will this piece
have lower, same or higher conductivity than the piece in (c)? Explain your answer.

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