PD - 91351A

IRF530N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 100V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.11Ω
l Fully Avalanche Rated G

ID = 17A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current  60
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

5/13/98
IRF530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω VGS = 10V, ID = 9.0A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.4 ––– ––– S VDS = 50V, ID = 9.0A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 44 ID = 9.0A
Qgs Gate-to-Source Charge ––– ––– 6.2 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 6.4 ––– VDD = 50V
tr Rise Time ––– 27 ––– ID = 9.0A
ns
td(off) Turn-Off Delay Time ––– 37 ––– RG = 12Ω
tf Fall Time ––– 25 ––– RD = 5.5Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 640 ––– VGS = 0V

Coss Output Capacitance ––– 160 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 17
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 60
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V „
trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 9.0A
Qrr Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs „

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
‚ VDD = 25V, starting TJ = 25°C, L = 3.1mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, I AS = 9.0A. (See Figure 12)
 IRF530N

100 VGS
100 VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D rain-to-Source Current (A )

I , D rain-to-Source Current (A )
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10 10

4 .5 V
4.5 V
D

D
20 µ s P U LS E W ID TH 2 0µ s P U L S E W ID TH
T J = 2 5°C T J = 17 5°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.0
I D = 1 5A
R D S (on) , Drain-to-S ource O n Resistance
I D , D ra in -to-S ourc e C urrent (A)

2.5

T J = 2 5 °C
T J = 1 75 °C 2.0
(N orm alized)

10 1.5

1.0

0.5

V DS = 5 0V
2 0µ s P U L S E W ID TH V G S = 10 V
1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
4 5 6 7 8 9 10

V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF530N

1200 20
V GS = 0V , f = 1M H z I D = 9.0 A
C iss = C g s + C gd , C ds S H O R T E D V D S = 80 V

V G S , G ate-to-Source V oltage (V )
C rs s = C gd V D S = 50 V
1000
C o ss = C ds + C g d 16 V D S = 20 V
C iss
C , Capacitance (pF)

800
12

600
C oss
8
400

C rss
4
200

F O R TE S T C IR C U IT
S E E F IG U R E 1 3
0 A 0 A
1 10 100 0 5 10 15 20 25 30 35 40 45
V D S , D rain-to -S ource V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I S D , Reverse D rain C urrent (A)

I D , D rain Current (A )

100
T J = 1 75 °C
10µ s
10
T J = 25 °C

10 100µ s

1m s
T C = 25 °C
T J = 17 5°C
V G S = 0V S ing le P u lse 10m s
1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF530N
RD
VDS
20
VGS
D.U.T.
RG
+
-VDD
15
I D , Drain Current (A)

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10

Fig 10a. Switching Time Test Circuit

VDS
5
90%

0
25 50 75 100 125 150 175
10%
TC , Case Temperature ( ° C)
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response (Z thJC )

1 D = 0.50

0.20

0.10
0.05 P DM
0.1 0.02 SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF530N

L
VDS 350
ID

E A S , S ingle Pulse Avalanc he E nergy (m J)

D.U.T. TOP 3.7 A
300 6.4A
RG + B O TT O M 9 .0 A
V
- DD
250
10 V IAS
tp 200
0.01Ω

150
Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS 100

tp
50
VDD
V D D = 25 V
0 A
25 50 75 100 125 150 175
VDS S tarting T J , J unc tion T em perature (°C )

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

QG 12V .2µF
.3µF
10 V +
QGS QGD V
D.U.T. - DS

VGS
VG
3mA

Charge IG ID
Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF530N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRF530N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)

10 .54 (.4 15) 3 .7 8 (.149 ) -B -

2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
E XEAXMAPML PE L:E TH IS ISIS ISA NA NIR F1
: TH IR 0F11 0 1 0
W IT
WHIT HA SASSESMEBML BY L Y A A
L OLTO C
T OCDOED E9 B 91 BM1 M IN TE R NRANTIO
IN TE N ANL A L
A TIO P APRATR N
T UNMUBMEBRE R
R ERCETIF IE RIE R
C TIF IR FIR10F 1100 1 0
L OLGOOG O 9 2 49 62 4 6
9B 9B 1 M1 M D ADTE A TEC OCDOED E
A SASSESMEBML BY L Y
(Y Y(YWYWW )W )
L OLTO T C OCDOED E
Y YY Y= Y = EYAERA R
WW W W= W = EWEEKE K

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98