MSC025SMA330D/S

Silicon Carbide N-Channel Power MOSFET Die

Product Overview

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The
MSC025SMA330D/S device is a 3300 V, 25 mΩ SiC MOSFET.

Features
The following are key features of the MSC025SMA330D/S device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 150 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant
Benefits
The following are benefits of the MSC025SMA330D/S device:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership
Applications
The MSC025SMA330D/S device is designed for the following applications:
• PV inverter, converter, and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution

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Device Specifications

1. Device Specifications
This section shows the specifications of the MSC025SMA330D/S device.

1.1 Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the MSC025SMA330D/S device.
Table 1-1. Absolute Maximum Ratings

Symbol Parameter Ratings Unit

VDSS Drain source voltage 3300 V
ID Continuous drain current at TC = 25 °C1 104 A
Continuous drain current at TC = 100 °C1 66
IDM Pulsed drain current2 240
VGS Gate-source voltage 23 to –10 V

Notes:
1. ID values for < 0.38 °C/W die to heatsink thermal resistance based on TO-247 package.
2. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics of the MSC025SMA330D/S device.
Table 1-2. Thermal and Mechanical Characteristics

Symbol Characteristic/Test Conditions Min Typ Max Unit

TJ Operating junction temperature –55 150 °C
TSTG Storage temperature –55 150 °C
Tproc Assembly soldering temperature (10 minutes 325 °C
maximum)

Recommended storage: The die should be stored (as shipped) in dry nitrogen with an ambient temperature of 25 °C.
ESD practices should comply with JESD-625.

1.2 Electrical Performance

The following table shows the static characteristics of the MSC025SMA330D/S device. TJ = 25 °C unless otherwise
specified.
Table 1-3. Static Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 μA 3300 V
RDS(on) Drain-source on resistance1,2 VGS = 20 V, ID = 40 A 25 31 mΩ
VGS(th) Gate-source threshold voltage VGS = VDS, ID = 7 mA 1.9 2.7 V
IDSS Zero gate voltage drain current VDS = 3300 V, VGS = 0 V 100 µA
VDS = 3300 V, VGS = 0 V, TJ = 500
125 °C
IGSS Gate-source leakage current VGS = 20 V/–10 V ±100 nA

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Device Specifications

Notes:
1. Pulse test: pulse width < 380 μs, duty cycle < 2%.
2. Based on TO-247 packaged die measurements.
The following table shows the dynamic characteristics of the MSC025SMA330D/S device. TJ = 25 °C unless
otherwise specified. The dynamic characteristics are based on TO-247 packaged die measurements.
Table 1-4. Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input capacitance VGS = 0 V, VDD = 2640 V, VAC = 8720 pF
25 mV, f = 200 kHz
Crss Reverse transfer 11
capacitance
Coss Output capacitance 194
Qg Total gate charge VGS = –5 V/20 V, VDD = 2640 V, 410 nC
ID = 70 A
Qgs Gate-source charge 138
Qgd Gate-drain charge 133
ESR Gate equivalent series f = 1 MHz, 25 mV, drain short 0.4 Ω
resistance
SCWT Short circuit withstand time VDS = 2640 V, VGS = 20 V 1.3 µs
VDS = 1650 V, VGS = 20 V 6

The following table shows the body diode characteristics of the MSC025SMA330D/S device. TJ = 25 °C unless
otherwise specified. The body diode characteristics are based on TO-247 packaged die measurements.
Table 1-5. Body Diode Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VSD Diode forward voltage ISD = 40 A, VGS = 0 V 3.55 V
ISD = 40 A, VGS = –5 V 3.65
trr Reverse recovery time ISD = 100 A, VGS = –5 V, 35 ns
VDD = 2310 V, dl/dt = –15500
Qrr Reverse recovery charge 4400 nC
A/μs, Drive Rg = 4.0 Ω
IRRM Reverse recovery current 210 A

Note: Based on scaled measurements, dl/dt and IRRM will be lower in typical applications.

1.3 Typical Performance Curves

This section shows the typical performance curves of the MSC025SMA330D/S device. The performance curves are
based on TO-247 packaged die measurements.

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Device Specifications

Figure 1-1. Drain Current vs. VDS at TJ Figure 1-2. Drain Current vs. VDS at VGS

Figure 1-3. Drain Current vs. VDS at VGS Figure 1-4. Drain Current vs. VDS at VGS

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Device Specifications

Figure 1-5. RDS(on) vs. Junction Temperature Figure 1-6. Gate Charge Characteristics

Figure 1-7. Capacitance vs. Drain-to-Source Figure 1-8. ID vs. VDS 3rd Quadrant Conduction
Voltage

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Device Specifications

Figure 1-9. ID vs. VDS 3rd Quadrant Conduction Figure 1-10. Threshold Voltage vs. Junction Temp.

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Die Specification

2. Die Specification
This section shows the die specification of the MSC025SMA330D/S device.

2.1 Die Layout

The Microchip SiC MOSFET die are designed such that all source pads should evenly distribute the package current.
The dimensions in this drawing are the nominal dimensions including the scribe street. The final die dimensions are
determined by the scribe frame at each fabrication location and the dicing process at each assembly location.
The dimensions in the figure below are in μm and [mils].

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Die Specification

Figure 2-1. Die Outline Drawing

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Revision History

3. Revision History
Table 3-1. Revision History

Revision Date Description

A 11/2021 Document created.

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ISBN: 978-1-5224-9123-1

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