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    Isc N-Channel MOSFET Transistor STD10NM60N: INCHANGE Semiconductor

    Uploaded by

    Y. Leonel Molina
    This document provides specifications for the INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N. The transistor features a TO-252 package and is designed for switching applications with low input capacitance and gate charge. Key specifications include a drain-source breakdown voltage of 600V, gate threshold voltage between 2-4V, and on-resistance of 60-65 milliohms. It also lists maximum ratings for drain current, power dissipation, operating temperature and storage temperature.

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    Isc N-Channel MOSFET Transistor STD10NM60N: INCHANGE Semiconductor

    Uploaded by

    Y. Leonel Molina
    18 views2 pages
    This document provides specifications for the INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N. The transistor features a TO-252 package and is designed for switching applications with low input capacitance and gate charge. Key specifications include a drain-source breakdown voltage of 600V, gate threshold voltage between 2-4V, and on-resistance of 60-65 milliohms. It also lists maximum ratings for drain current, power dissipation, operating temperature and storage temperature.

    Original Description:

    Semiconductor

    Original Title

    STD10wNM60N

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    This document provides specifications for the INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N. The transistor features a TO-252 package and is designed for switching applications with low input capacitance and gate charge. Key specifications include a drain-source breakdown voltage of 600V, gate threshold voltage between 2-4V, and on-resistance of 60-65 milliohms. It also lists maximum ratings for drain current, power dissipation, operating temperature and storage temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views2 pages

    Isc N-Channel MOSFET Transistor STD10NM60N: INCHANGE Semiconductor

    Uploaded by

    Y. Leonel Molina
    This document provides specifications for the INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N. The transistor features a TO-252 package and is designed for switching applications with low input capacitance and gate charge. Key specifications include a drain-source breakdown voltage of 600V, gate threshold voltage between 2-4V, and on-resistance of 60-65 milliohms. It also lists maximum ratings for drain current, power dissipation, operating temperature and storage temperature.

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    © All Rights Reserved
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    INCHANGE Semiconductor

    Isc N-Channel MOSFET Transistor STD10NM60N

    ·FEATURES
    ·With To-252(DPAK) package
    ·Low input capacitance and gate charge
    ·Low gate input resistance
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·APPLICATIONS
    ·Switching applications

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 600 V

    VGSS Gate-Source Voltage ±25 V

    Drain Current-Continuous@TC=25℃ 10
    ID A
    （ TJ=175℃） TC=125℃ 5

    IDM Drain Current-Single Pulsed 32 A

    PD Total Dissipation @TC=25℃ 70 W

    Tch Max. Operating Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth(ch-c) Channel-to-case thermal resistance 1.79 ℃/W

    Rth(ch-b) Thermal resistance junction-pcb max 50 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    Isc N-Channel MOSFET Transistor STD10NM60N

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 600 V

    VGS(th) Gate Threshold Voltage VDS= ±25V; ID=0.25mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4A 60 65 mΩ

    IGSS Gate-Source Leakage Current VGS= ±25V;VDS= 0V ±0.1 μA

    VDS= 600V; VGS= 0V；TJ=25℃ 1


    IDSS Drain-Source Leakage Current μA
    TJ=125℃ 100

    VSDF Diode forward voltage ISD=8A, VGS = 0 V 1.3 V

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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