PTF 10007

35 Watts, 1.0 GHz

GOLDMOS™ Field Effect Transistor
Description
• Performance at 960 MHz, 28 Volts
The PTF 10007 is a 35 Watt LDMOS FET intended for large signal - Output Power = 35 Watts
amplifier applications to 1.0 GHz. It operates at 55% efficiency and - Power Gain = 13.5 dB Typ
13.5 dB of gain. Nitride surface passivation and gold metallization - Efficiency = 55% Typ
ensure excellent device lifetime and reliability.
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% lot traceability
• Available in Package 20235 as PTE 10052

Typical Output Power & Efficiency

vs. Input Power Package
50 100 20222
1000
Output Power (W) A-12
7 3456
9723
40 80
Output Power

Efficiency (%)
Efficiency

30 60

20 40
VDD = 28 V

10 IDQ = 300 mA 20
f = 960 MHz Package
100
2 3 4 52
A-1
569
0 0 20235 999

0 1 2 3
Input Power (Watts)

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 60 Vdc

Gate-Source Voltage VGS ±20 Vdc

Operating Junction Temperature TJ 200 °C

Total Device Dissipation at Tflange = 25°C PD 120 Watts

Above 25°C derate by 0.7 W/°C
Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (Tflange = 70°C) RqJC 1.4 °C/W

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V(BR)DSS 65 70 — Volts

Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA

Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts

Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.8 — Siemens

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Gps 12.0 13.5 — dB
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 300 mA, f = 960 MHz) P-1dB 35 — — Watts
Drain Efficiency
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) h 50 55 — %
Load Mismatch Tolerance
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz— Y — — 10:1 —
all phase angles at frequency of test)

Typical Performance

POUT, Gain & Efficiency (at P-1dB) vs. Frequency Broadband Test Fixture Performance
20
30 70
60
Output Power & Efficiency

Efficiency
Efficiency (%) Efficiency (%)
25 60
16 50
20
50 Gain (dB) 40
VDD = 28 V
Gain
Gain

Gain (dB)
15 12
IDQ = 300 mA - 30
5
40

Return Loss
10 POUT = 35 W
20
-15
VDD = 28 V Output Power (W) 30 8
5
Return Loss (dB) 10
-25
IDQ = 300 mA
0 20
4 0
-35
400 500 600 700 800 900 1000
925 930 935 940 945 950 955 960
Frequency (MHz)
Frequency (MHz)

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Typical Performance

Power Gain vs. Output Power Intermodulation Distortion vs. Output Power
-10
17
VDD = 28 V
16 IDQ = 300 mA -20 IDQ = 300 mA
Power Gain (dB)

f1 = 960.000 MHz 3rd

15

IMD (dBc)
-30
f2 = 960.100 MHz
14 IDQ = 150 mA
5th
-40
13
IDQ = 75 mA VDD = 28 V -50
7th
12
f = 960 MHz
11
-60
0.1 1.0 10.0 100.0
0 10 20 30 40 50
Output Power (Watts) Output Power (Watts-PEP)

Output Power vs. Supply Voltage Capacitance vs. Supply Voltage

45 120 40
VGS =0 V 35
Output Power (Watts)

IDQ = 300 mA 100

Cds and Cgs (pF)

f = 1 MHz 30
POUT = 5 W
40 80 Cgs

Crss (pF)
f = 960 MHz 25
60 20

Cds 15
35 40
10
20
Crss 5
30 0 0
22 24 26 28 30 32 34 0 10 20 30 40
Supply Voltage (Volts) Supply Voltage (Volts)

Bias Voltage vs. Temperature

1.03
Voltage normalized to 1.0 V
1.02
Series show current (A)
1.01
Bias Voltage (V)

1.00 0.3
0.87
0.99
1.44
0.98
2.01
0.97 2.58
0.96 3.15

0.95
-20 30 80 130
Temp. (°C)

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Impedance Data (shown for fixed-tuned broadband circuit)
Z0 = 50 W
VDD = 28 V, POUT = 35 W, IDQ = 300 mA D
Z Source Z Load

Frequency Z Source W Z Load W

MHz R jX R jX
850 1.48 -2.80 2.60 1.55
900 1.45 -1.65 2.60 2.30
950 1.35 -0.30 2.68 3.40
1000 1.10 0.88 2.70 4.15

Typical Scattering Parameters

(VDS = 28 V, ID = 2.0 A)
f S11 S21 S12 S22
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
400 0.948 -167 3.668 33 0.006 -37 0.858 -149
420 0.951 -168 3.403 32 0.005 -37 0.866 -150
440 0.955 -168 3.161 30 0.005 -37 0.877 -151
460 0.956 -168 2.943 29 0.005 -36 0.886 -152
480 0.957 -168 2.745 28 0.004 -38 0.892 -152
500 0.959 -168 2.575 27 0.004 -35 0.898 -153
520 0.960 -169 2.421 26 0.004 -34 0.903 -153
540 0.962 -169 2.282 25 0.004 -30 0.907 -154
560 0.963 -169 2.151 24 0.003 -29 0.911 -155
580 0.964 -169 2.024 22 0.003 -28 0.913 -155
600 0.964 -169 1.907 22 0.003 -23 0.919 -156
620 0.965 -169 1.806 21 0.002 -20 0.925 -156
640 0.967 -169 1.72 21 0.002 -13 0.929 -156
660 0.966 -170 1.636 20 0.002 -6 0.929 -157
680 0.967 -170 1.558 19 0.002 3 0.929 -157
700 0.967 -170 1.483 18 0.002 8 0.928 -157
720 0.968 -170 1.413 18 0.002 21 0.930 -158
740 0.968 -170 1.345 17 0.002 25 0.932 -158
760 0.967 -170 1.281 17 0.002 33 0.935 -159
780 0.966 -170 1.228 17 0.002 44 0.937 -159
800 0.967 -170 1.179 16 0.002 51 0.938 -159
820 0.968 -170 1.134 16 0.002 55 0.939 -159
840 0.967 -170 1.088 15 0.002 59 0.938 -160
860 0.967 -170 1.039 15 0.003 67 0.938 -160
880 0.967 -170 0.993 14 0.003 68 0.938 -160
900 0.966 -170 0.957 14 0.003 73 0.941 -161
920 0.966 -171 0.922 14 0.003 75 0.943 -161
940 0.966 -171 0.890 14 0.003 79 0.941 -161
960 0.966 -171 0.859 13 0.004 81 0.942 -161
980 0.966 -171 0.827 13 0.004 83 0.943 -161
1000 0.965 -171 0.794 12 0.004 86 0.942 -162

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Test Circuit

Test Circuit Schematic for f = 960 MHz

DUT PTF 10007

C1, C5 39 pF, Capacitor ATC 100 B
C2 7.5 pF, Capacitor ATC 100 B
C3 0.6–6.0 pF, Trimmer Capacitor, Johanson, 5701-PC
C4 0.35–3.5 pF, Trimmer Capacitor, Johanson, 5801-PC
C6, C8 51 pF, Capacitor ATC 100 B
C7, C9 0.1 mF, 50 V, Capacitor, Digi-Key P4917-ND
C10 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276
L1 4 Turn, #20 AWG, .120” I.D.
R1 1 K, 1/4 W Resistor
R2 10 K, 1/4 W Resistor
l1, l4 Microstrip 50 W
l2 0.185 l 960 MHz Microstrip 5.70 W
l3 0.240 l 960 MHz Microstrip 9.30 W
Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz.
copper

Parts Layout (not to scale)

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Artwork (1 inch )

Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States Specifications subject to change without notice.
RF Power Products +46 8 757 4700 International LF
Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com © 1997 Ericsson Inc.
www.ericsson.com/rfpower EUS/KR 1301-PTF 10007 Uen Rev. C 12-31-98