International Conference on Communication and Signal Processing, April 6-8, 2016, India

A Novel Input Output Impedance Matching

Network for LNA
Priyansha, K.R.Samatha, and S.Sivasundarapandian

Abstract—This paper deals with a wide band low noise amplifier expressions of S-parameters. CS and CG are two widely used
(LNA) based on input output matching using stub. It describes transistor configuration in CMOS LNA.CS stage has high gain
the Low noise amplifier (LNA) network with different variety of and good noise performance [5].CG configuration causes low
matching networks at the input side and output side of RF power, robust against parasitic and stable circuit. It has a weak
receiver at 3.2 GHZ. It helps to differentiate the outcomes of ‘T’
noise performances [6].Wideband input matching is possible
type and ‘L’ type matching network. This circuit is designed and
output graph is obtained with Advanced Design System (ADS) in CG configuration and hence is widely used in broadband
software. RLC feedback circuit is use to improve LNA network LNA circuits [7],[8].It is used for wideband application in
by a proper selection of a transistor type. Among all LNA matching circuits of narrowband LNA ,CS configuration is
matching circuits the T-L type matching gives better results in used [9].Matching bandwidth is a main factor in designing
the stable region than L-L matching, L-T matching and T-T type matching network. CS and cascade stages can be used in
matching. To obtain stability condition voltage gain and Noise broadband or multi standard applications, using LC matching
Figure of T-L match is 14.141 db and 1.812 db which is better network. Some other matching techniques have been
than L-L match as 10.391 db and 2.151 db, L-T match as 5.236 improved for ultra wideband applications [10].At the receiver
db and 2.46 db and T-T match is 6.468 db and 3.9db
side there would be a direct matching of antenna to LNA has
Index Terms—Stability factor, Low Noise Amplifier (LNA),
been considered [11],[12],[13].Under this method , optimum
Noise Figure (NF), T-matching network-matching network,
Radial Stub. noise and power matching of LNA together becomes possible.
A section of frequency is rejected conventionally by RF filters
I. INTRODUCTION in the LNA at the input side. This RF filter further designed as
a part of input matching network [14],[15],[16].In cascade

D esigning amplifiers to obtain minimum Noise Figure can

CMOS LNA with a band pass filter at the input side to achieve
wideband input impedance matching has been considered. In
this input impedance matching is inserted as a part of filter
be achieved by setting the optimum condition for a particular
[17]. Low power dissipation of wideband matching and small
transistor. Recently, wideband technology has widespread
size of die can be achieved by using common gate input
because of high data rate transmission capability [1], [2].Here;
topology [18]. To reduce the high Noise Figure, they
we are using LNA with wideband input impedance matching.
introduced noise cancelling technique [19], [20]. Distributed
For designing a LNA, S-parameters and performance analysis
amplifier has a advantages of wideband input impedance
of transistor is needed. In designing the LNA.
matching and gain but have disadvantages of more power
Important parameters are low noise figure, high gain,
consumption and higher size of the chip. In order to achieve
matching and stability. In paper [3] presents the design and
wideband impedance matching, we reduce Q-factor at input
analysis of wideband Low Noise Amplifier (LNA) based on
side series RLC by using resistive feedback. For that 3-5 GHz
resistive feedback. Wideband input matching was obtained by
cascade based wideband LNA was proposed. Resulting
using T-L matching. A systematic idea and algorithm for the
between the frequency response gain and Noise Figure that
design of low Noise Amplifier (LNA) based on S-parameters
exist a conflict which is intrinsic. In frequency band of 3.1-4
given in [4]. This paper uses coats diagraph technique for
GHz low and linear noise figure (NF) obtained and S11 has
promoting the idea of automatic computation of symbolic
only for wideband with various applications. In spiral
inductors are used this drawback is occupying large chip area
size. In contrast to we will having two inductors and a parallel
input capacitor was added to enhance the input impedance
Priyansha is a student of Electronics & Telecommunication engineering of matching bandwidth. The next step is to match the input
Sathyabama University, Chennai, Tamil impedance in order to obtain the low NF and good matching at
Nadu,India(priyansha.miks@gmail.com, phone:8608722850), different frequencies. It do not tends themselves to more multi
K.R.Samatha is a student of Electronics & Telecommunication engineering
of Sathyabama University, Chennai, Tamil Nadu, standard applications because each input and output should
India(krs.samatha027@gmail.com, phone:9789016646). must rearranged and realigned to each other. The next step is
S.Sivasundarapandian is a Asst. professor of Electronics & to match the output to obtain low NF and high gain. This
Telecommunication engineering of Sathyabama University, Chennai, Tamil
design consists of two LC tuned circuits and cascade stage
Nadu, India(ssp_2020@rediffmail.com, phone:9382712928).
load are used. Usually, multiband and/or multi standard

978-1-5090-0396-9/16/$31.00 ©2016 IEEE

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transceiver solutions uses a multi input stage for each will be most stable to meet the following conditions [21] given
frequency ranges. Dual conversion architecture is adopted for as follows:
2.4GHZ and 5GHZ whereas zero-IF architecture for 3.5GHZ
.The following section deals with Equivalent circuits of | | | ⃓| |∆ |
MESFET, DC biasing, input matching network, condition of K= > 1 ( 4)
| . |
matching, Noise Figure simulation results, experimental
Results, various performances of LNA, merits of adding ⎹ △⎹ < 1 (5)
Radial stub.
The paper is organized as follows. In Section II, we III. INPUT MATCHING NETWORK
summarize the DC biasing. In Section III, we give a brief
overview of the input matching network. In Section IV, we A.CONCURRENT LNAs
discuss the proposed methodology. In Section V, we To operate at two or more frequencies, LNA should be
demonstrate theoretical results through simulation. We matched initially with required frequency. It is matched by
conclude our paper in Section VI. keeping gate inductance. The basic double-band input
matching network contains a parallel LC network in series
connection with Lg. This method was also used in
II. DC BIASING implementation of multi-band LNA. The structure suitable for
CS LNAs which contains of a single parallel LC resonator
To design a Low Noise Amplifier (LNA) at an operating point
kept at the amplifier at the frequency of 3.45
DC biasing should be given to the transistor. This depends on
transistor type, Noise, Gain and power.
B. SWITCHED LNAS
The amplifiers which can tune the frequency bands by
varying the values of the passive elements with the help of
PMOS/NMOS switch. RF switches are used in RF Front ends.
LNAs having different drawbacks when it comes to the active
Matching Load
switches like non linearity, noise and parasitic resistance. By
Network ZL
using the gate-capacitance valve we can change the variable
Z capacitor value Cg s, by placing the network between gate and
source of the network.

C. PSEUDO-CONCURRENT LNAs

This type of LNAs is able to cover a set of frequencies. The

Fig.1. A lossless matching network for transmission line. main element of this LNA is input matching network which is
Individual [23] effective gain factors the input (Source) matching used to provide the concurrent matching for 4 frequencies.
network and the output (load) matching network as follow. The The wideband of 3.5 GHz is acquired by placing a switched
overall effective gains because of impedance matching of the capacitor Cg s and switched inductor Lg s. It is used to design
transistor with impedance Z0 can be calculated as: the single or double band LNAs. It provides a lower
impedance as compare to the band pass filter at high
frequencies.
1 − ⎹ s⎹
s= (1) IV. CONDITION OF MATCHING
1 − ⎹ in s⎹
It has been shown in Fig. 1, which shows an impedance
matching network kept between load impedance and
0 = |S21| (2) transmission line. The coefficients of S-parameters of a
transistor were determined. The flexibility of designing the
circuit is input or output matching circuit. To achieve
1 − ⎹ L⎹
= (3) maximum power at the load, it should be matched with output
⎹ 1 − 22 L⎹2 circuit and input circuit should be matched with source.
Input/output matching circuits should be designed to gain
stability in such a way that the correlation of reflection
coefficient with conjugate number in the complex forms as
Thus the overall transducer gain is given by: GT=Gs' Go GL. given in [22] as:
Where GL and GS are the effective gains.The stability of an
amplifier is very important factor consideration for the design
of LNA. It can be determined by S-parameters of matching
networks.On the other side, it can be shown that the amplifier

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2090
 Г
Г IN=Γ*S=S11 + Г
(6)

Г
Γ OUT=Γ*L=S22 + (7)
Г

The NF of the receiver should exceed the NF of the whole

system. To achieve minimum NF power reflection coefficient
and load reflection coefficient should be match with out and
*out respectively.
Гs = Г opt (8)
Г Fig. 3. S-Parameter Plot
Г L = Г* out = S22 + Г
(9)

This occurs when |Г IN| > 1 or |Г out| >1. While, the stability of
the amplifier depends on S-parameter presented by the matching
networks.

V. NOISE FIGURE GRPH RESULT

The minimum Noise Figure is required in order to achieve the

maximum effective gain. Fig. 8 shows the N F figure plot. The
lowest N F min 1.264 dB obtained at frequency 3.8 GHz. The
minimum noise figure 1.261dB is obtained at frequency 3.6 GHz,
while minimum noise figure 0.97 dB is reads at frequency 3.1
GHz. The NF min value is rising slowly as frequency increases. Fig. 4. S21 (dB) – Forward gain Plot

Fig. 5. S11 (dB) – input reflection coefficient Plot

Fig. 2. Minimum Noise Figure

VI. RESULT ANALYSIS

The designed LNA network at 3.1 GHz was obtained. The

forward gain ( S21 ), isolation ( S12 ), ( S11 ) and S22 plot is
shown in Fig. 3. The result shows that the S11 <1 and S22 <1
fulfils the stability condition. The highest forward gain ( S21 ) is
-4.01 dB at 3.2 GHz as showed in Fig.4 . It also represents a good
forward gain when S12 value is below -23 dB at 3.6 GHz to 3.8
GHz frequency band. Also the stability factor, K Plot is shown in
Fig.6 Thus, it should be stable in frequency range of 3 GHz to 4 Fig. 6. Stability Factor (K) Plot
GHz. Figure.5 the best impedance matching for high gain and low
noise in frequency range of 3 GHz to 4 GHz. Table I compares
result of the designed LNA with the designed circuit given below:

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2091
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Fig. 8. Input output impedance matching of LNA circuit using Radial stub.

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