Scribd
Upload
11 views

VLSI Assignment-2

Vlsi assignment

Uploaded by

Innovation SRI
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
11 views

VLSI Assignment-2

Vlsi assignment

Uploaded by

Innovation SRI
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
You are on page 1/ 24
VLST Destan : a ee | Assiqnmert -2 HName f- Ch. ddrthya Sectim: ECE -2 | Rol) Noo + (60 -Q1-735-093 4. |Desemibe constvucttonal teatures and performance | chavactem tics ef pseudo —omoe loqie and. Constyuctone Featuves s @ Transistoy Aman emenh 3 - Tt consicte of muttiple NMOL draneretovs connected semes, Fach thansictey acts as 4 past qt for inpud Su (i) Tnpuk Stage t- ate typically has um ov move input terminals , each connected +2 +the teaminal of NMOS tranuctov, Louver teammnals of these trancictovs ave comm ly connected + qrrund (Wes). &) Outpt Stage? Daam teaminal of NMOS trancistow ave connected hon +o ove getets output node. The node serves ad oudput: . @) Lead Recistov i Tt w connected betwen output node and poerdve power supply (ton) Pevdormance Chavactemectied 5 @ Speed t- t+ often crelecavelly fast sertching speeds () Pooey Concumption + Consumes stahe powew due to presence of load vestctoy, Powe dtesipahoy can be vedlucad uo dynamic, op Gu) Nowe Manging 2 - Nowe manginm ave tmrted by the and asymmety between er a Qs) fan-out & wa te Worked compared “to othey loge darmbcs, toad menstoy and troneitoy sixes determine the ates drwving capabr tity , adtectrg chy ability devwve mull plc loach corthoud degrradectarn m pew-forrmance (&) Voltage Levels ¢ reg operates woth wltege wel com pab ble roth nimot | technotegy 2) | Devive pall up +o pul dowry gee ‘love On | NUTS inverter dower by another NMOL inverter. Considev the depletm ep dranattoy tov which Vl =0 “iat unter all condrbens, an Burctha assume thet +p caccade wnverteh © Clearly expla aboud ION IMPLANTATION step uv Ic dalomcathon . Janbaon te a low-dte Ye paces by whicly (008 of one clement ove accelevated wnt a eotid tong , thereby changing the phyptol chemusJ, ov decdricad porpertres of the tong Anelzng Ton— imp Ton source cooatt of & dapart mediemtad torthin ven Gavia) eletre held 4 | Ths electric tel uv ctong envugr to seponly the dard metrcedrs ireto cenctrtuerd tone forming a chenged ques These clarad tors ove than acecloyated +0 desirved voleorty by cartel] of voltage along the accclenctoy tube. TH vc rowed into a mao bec? baglv ae tone ee ton curyerd 4 ot tha ove of tm4 Magnetic field « so sf He only desired dopant turns though ong an - ‘J ig Focused beam of dopant tot uv thon pasted horde X and Y plates Mechaniem uw almost cethyedle cel cccilloscope wluch move scvecn. Perpendiculow dustance doom semteenductey curface coveted by anepurrtty ator befove coming to oest J called Poopcted/ Reng (Fr) Define Chemical Vapour Depacrtin Chemel vapouy deposrtion (CVD) ww & proce herby a eolid materi 4 deposrtad dom a vapour by a chemical ceacbon pccuaying 00 oy th velar of & norm heeded cube tel curvfacy. Solid material w obtained as a coabrg Bea. porodler , ov a single onpstals Tha Aypread CUD proce , ov move votahle precurysow) wludy react od dese om substrale suvface +0 porduce athe desived daposs : punng ‘lus proces, lable by-producl ave alo produced , volude ave cvemoved by qo low thooeg J peacbn chambe : plasma iderhca) +o scanning plates Uae cael beam ever the a CUD filme ove generale quite conformal | Cup filme ave hevdel than similar medemals produced a ewnvertbena) fabricat parced CD Bb used ww micao clectaon cs industry 4p make Frlrny seuing as dielectrics, conduct , pareiveton byes, oxidathon bates, and epitantal hag 5y | Paeto the omveuit dtagyar of Br—cMos logic. shown } Qo imped NAND Gate Ypp oe i a tN in esl Explain dhe Cx-Powcess Czochvolekt Ovysted Gmwth pwc 4a ry bliad of omyptal qrowth wed py obtaw single oryted silicon ingot a Gmuth » the prices whee ~ Pre-exe ap more molecoles ov (ont ww bate cyte] beame dhery pocitons 1% orp Electoonic grado etlicern Gas) ¥ plaad quarts couerble fav hecbrg Due +e heeding , the elicon gh motten Furnace uv headed above exec oes ok > OO iecd onped i dipped iw molten £1 and slowly tortld vaton. by onyeeed pull-g mechanism Seed Onplal 2 furnaa are onteded in cppocite drreca ms Noten Explatw he Nimoag £ 0M0S — fabertachay porcedve @ nNOS Eabotoadow @) Proceestng ¥ possed om a singly dal 84. of bale perty om whic neces P impurrty Bw intheted a she owslal 4 dweleped- oe of he Si- substrate one aboud 75-160 IG) S10, lager nov: A ur baad ‘Tt allabove the L is exter voafer 40 pe Sr substredle the ourfacr, performs 4 ~ banter to dopard thao Ay 4 procensing and odfey p chi subotrahe - (1) Surdace wy now enclosed wetl he photo oppose wlicly 1s depos peal wad and spur hea oven) dustrilochon of necexevry Hacked: (i) Photoresut coahra uy the tanwovered 4p OV ight thaougy mas which desonbes these avers teto colvely tranemicsion J +o ake place a4 oe wrth.) transect chanel phetoveset (¥) These reqtors re ones erty \ ead eye mweadily “fined aay + hev wth ~ ofits age the 4 nal ag punts the a curdact of tortey 4 uneweld 1 window dehned >y mask Wy 4 Ahan layew ef Sid, Gtatey Grow over the chip suvdace adtew femoving the semaine of phortrreniet. a) qt stucure u oveated by depoeitong polysilicon on the stp of 4. n) Further, phetovesiet coadhyy and masking yy 5 alluos the polysilicon +to’ be petleinad, (EB Oe Altey the, thin oxde o Yemoved to ose ae areas , These avers ave detused worthy n-type cae a heading Se to pil Peo by) phasing ot destreol 9 “ype \ impure & a he sourea and deyain + thican has an und "y, than oxide, ido acs as a male dung ditham Ts & abled self-aligning fwaqaw a thick onde of 8 aban ove and then meskad worth photresist . nlao tt ub etched +o seleckel oven ot the papiticen pe, dvamand souvee. whee connechr ave_to be made - &) Now the whde chip hou dapos ts of tho mob! GL) arte t 4p thicknen of Sum. oa ek. We and thew elchad tp form +h rraquered inbercen necbar pattern, f an avea lope shoo 10) Y= &+etc)| below i } 2 | Peay AL at, HE rw and Ler} 2 < " S + ® a c & ebficrend layout diagvarn V [LITTTTIVRIC LITITZ 76, fi i ly oresre vy PIZIZZTZARUET LEZEN f ° ra ctor exits, mig Yj y y i Ai Ay \PZZ7T TA LZZ AZ N » Explain various stepe involved! uv Photo Arthuaryap , Phot bthography 4 the paves of trandeni geonehrne ori shaper 7a mask tb the surface A athens water. Tt u a priced ted in micoo-taboresdhoy -to pew prob om a ten dilw w the bulb of cubetse « | Steps wv Photatthapiagy : | @) Weev Cleanin | uledew w cleaned ty eliminate pollutants by “peng toto | aye and mnie worth detonred western followed by dhyirg sort ortwogpa- vy () Pore— bake. and &Pormew, Coxb Porming th dove 0 tmprove pheteveruet adhesion Enleel Vy, tel (veu}} | | Tr hneay ve9l, So, toad = Knylecd (2|VritmaVot]- | | (nto) tl] | | toovk as dvr nlten one v ON, otha 4 oF U connected +d gt fetmmnal of beth transite cude 4ttad both ah be dver aveetly wth unged wo Hage Vw Subctath of nos 4 connecked +0 ground and fubcal *. of pMos 4 connected +p powoev cupply ‘bo Men =i and Veen = Vee Vgs,p = Nin Mop end Voc, p = Venct ~ Vo Vw Nout NOS pMos- | (loo t\ro,9) Vor linea’ ete Wy |Ketixze KOR and NOR orverats oo stranumpectny fie @ X0& B Z: 4 Sg, eee g 4 2 4 8B z 4 ° ° o a 0 I ' a ( 0 ! A ' ! o + lf 5 —e 8 z B 4 aaa & a iE ee 5 ee ee a 6 yo + & © 4 Ea missin, gate wrth Pas Transiehv ae Trans Transmission, Gate | Pass Transit: | toy pmos and pms Ww Ser pmos oY ompe panel fe. agnmcraal tanctes i? Be ee lane donates chovachemstics curtatle doy both diqdel | o dutebe dv ducal ord analog ro oa v Mave avaand complerity her over due +o cing due +o duc$ -ranusty tyanartov qenevalty stowey due +o Poterch ably daster due tv vaghev capacitance lone capacetance. : Hie stehic pow how stohe pote ; commu prion kt la i alameda tio cae 135| Draw Uf) crrcutaeh enews mane cnovespoeleng tile | dtagvam dy nMOS and canos inverters | (yy manos rnvevters _.Nad | Vout RLS |(i) cmos tavettew Nad | | | & tos | ais \3y |Desiqn & D-FF uaing Transmit) gots lapte “Tranemicsion — qattes cooled by complemorborry clock eHechvely tmudte and latch the dake while tovected marntan the this enruves Het tho dlip-dap capheves and hell He D put ot the coved clock ediees providing aebebe dagrtal stovaq sy clk) ce] oe | Dacre the symbelio kyrt doy the cMos mverfet ond | corte, the geval emes loge gee dagruk gquedelinas? Nad A hd ctor and pmoe franaurtea in n-woell Q) Place omoe ranch and p-wotl cespechvely dvansicte =) ane td cane () Aba ondary iia (u) Ose metal lagen lov udeveennedting didteverd por? — of crt bah cout @) mimeuxe the number 4p ceduct pannerte, capacrtance ard po &) Avoid lon, poll eiCicow wrves since they bos L 0 10 es A tie et d dtr melas. 7 "4 | yestclanee™ compo e 1) Eneuve there Yave dedieced and sobutt power and qrund line @) Place inputs and output pes th accesseble locechons da | ey qveding and connecim to othev part of the etveuit w sto extemal pad iss |\KIhat vw the need fev destabilety 2 larw des doy testabr lity eT ce | Design tov Testability | sof the dovelopment P undew ecthey & mresouyee — scheme Testabitity v | mre lve ba ty due Din A vesoUree lmted ga porcediuve Hat ob wed +o cen fov maximum effectreneD umited w aelabi by even heard erthor +0 aediuce coct in ~ and dip +» tnovense aeltabi lily involves uncerpowsh addrhoral crveua sean chains, built—ty self can cefly mto ohip Loreen peT tm VLSI des and design tesctevey such |tat evyuats, and bomen ay daculrtets teshry Destqn doy testability w WLS dos YB exerdal +o entuy) het fabmested chsps ne drew from ane kind of manutacun' ; st obo ay overall test time and thereby cost of sere and de buggirg By tnecrpovedang DFT techniques into chep dosgn, tt become) easier to test tha strucluvel asvectnen of Lip , leading +o bégha quality pratucty and dawler ctme-to— | ha 1a 10). |Almte a she ce “ “st shat ps tayen and sy bolic diagram anstahon tp MAS dorm mes Layew Nos desgn 4 ama at turaing a spechashon into masks dav poveessing culo “to “meet the cpeerheccton (9) Substrate : Bare wu whack Mos device 4 balk. Ft 4 Aypreably medle up of cilice sewing o4 frundabon +o cubsequenE yeu y) Bode layers Placed mm tp od gubshate i chach as incdetev, sepav Thae y clabe pesoew! poncu ston when cedat u lao of ourventt covcbmiovsly flows tee cyesistov : +pme of oudpet nod > -tme ametaul, oh 7 ae oi dtc wed ob le ery Used we strafe aneutt and bs brequest vv modem CMa (u) PROS transistey PuLll-Up ; i PMOS can be cendigueved in. deddevenk tory tp ak wv | an ache pul up toad = ulherw prop combed PMos pull up ow reduce stxbe poco censsiny co 4p crestchve pull-ups > ache. FMos lends powvide Guyrend source pull up poodles a conclanh mwert to -the ordpust node, wlicl can be ¢ lamented use Panos gatuyation mole, wth proper! biased qv , Ensures & steady cucrrevedl invepective ob wllege ot ole. coretootlad ape, doy met edge of ouckpa se >ar P edad ov Bay Appling £ yuk ah RY Whe «wi chek) dtagwam and explain about didtewd symbels used tov components im Shek Diagram, Draw the chek and laynd doy a +wo imped CMOS NALD qoke A she dieqvow 4 a dieqrammohe re presentabon of a clip layod het helpe +o abstract a moet) tov des el uagqran owe used +> convey Ale layer intorm hon. wrth He help of cder code Desa dyes = drecbard eketcl of a layed , vsing celeud tives to cepresent ‘the vawtout potced lays eucly a deffusion, me and pebyartieon waheve pelyttieon ooeier detturm, tensistoa, one vested and whut mead wives gern dittuscon ov pebystticun , | contacts owe toyed. |For aw noose desqn, | Gren color u used tev n—didfusimn. » Red to Lica | Bus ter ae * Yellow tr maplarct # Black for conta oveoy. CMOS NOND Gate: 19) | Determine —palllpte pall docon aetio of an NMOL inverter Johan den tinough me or move pars transieton, oo Vp Vop Inv 4 we % Consider. hoor inverter covrcaded thooughe pos tancictes, het mx port A ovr, pont B Von , port Voy Vy, E. dives neues A cume thon mod transite, te in cetuvethn and | enhancement mode transistor yo in non — sede on | Replace doptetion mode drensucty wrth constant ccrverd eure and enhancement mode dranciety with vestety. Tavevtev-4 3 - Fo pull doton transit , Ty, eG VOM |= "| Ata Vas = Vad =k ee(Wa ~¥) Mas] i (Gay) Vass} oy ® Nas, . e, Sumsed ‘ Fas, ead -¥e) For pull eS transist, : e We Taypay 7 es (3s aa) ca ate, Cray i J eon ‘ + ' (Wu-“ep) Ya Ses | aoe ! =piype pa Vet aes = = 7 Qu-Yy-e XL Not, = Be ig es wre Qa- Na)- Ne * Vet = ety 4 = Bes Rr est sae dy aN oe 7azpay (4a-Me) K pus eS Zpuy Zp, Rpdy © Taxa Ba U%)-% Men) Ne avy Design a ctek dianaw and layout fa two taped cmos NAND a Indeeabrg all the reqtons and bye

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy