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VLSI Assignment 2

Vlsi assignment

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13 views

VLSI Assignment 2

Vlsi assignment

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Innovation SRI
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© © All Rights Reserved
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» | Desembe conskvuctional features and Pertocrmance chanactemstics of pseudo — omoe bogie and. Constructions Features ¢ (i) Transictoy Amrangemert 3 - TA conaiste of muttple Nmog trancictovs connected mw semes. Each thansistoy acte as a past qt for impuk su @) Thput aa Gate ‘typically has tea oy move input tevminals , eacly connected 40 the taminal of NMOS tranuctov, Souvee teammals of there trancictove ave comm ly connected 40 ground Weay, sy) Outpt pee Daam teminal of NMOc trancictow owe connected toqatho 4p rym get's output node. This node carves as ordput: @) Lead Rectetov i Te uw eemeded betoan output node and merbve paves supply Con). Pevdormance Chavacemisted 3 © Speed + Tt olden velatvely fart sortding epeads () Powew Concumption + Conaumes stahe powey due to presence of load vesteloy, Powew diseipahon can be creduced erg dynamite apevecbon (ey) Nowe Manging *- Nowe margins ave limrtef by the precence of load nesictev and asymmety betreen pull-up and pull—daon. netuwvks eee " ny = ee ee TE se Numrted compared to othey ge der bes. Coad menstoy and troneictey stxed detetmine the gatele driving mpabiuty, attecdoy ch ability to dywe muthpe load vorthoudt degradecton tm performance &) Volt. Levels : - Typiedly epevedes torth wlteqe towels com pabble worth NIMov technotegy Devwe pull up +o pu dowon, weto -foy an Nioc inverter dower by anothey NMOL inverter. Considev the ay mode trove do ak ed —f > eee duvtha acsume that eae Tae Ty depletoo matle +- os ee Cus Qty =0) Ty ehhencement mode t Tye = kK Ap Wn Wa) ne = 1s =a a) ip i) Equectng above currerd eguacbon, rag a Ninu = Vy — Nal \ pu] xpd Ne = O2Vop Wye —O.eVop — Vin = 0.5 Voy, OSV, = 0.2465 — Cac us) pe | Zp 0.2 2) OG Tala eS pullers apd i Zeu A pd \ => Clearly explaty abo 10 — IMPLANTATION step th tc fabmeahon . Ton—rmplantaben 4 — tow—terporrfire poncess by tohicly (ons of ome element ave accelevated nto a cotid tonal , thereh changing the phystel ,chermess, ov electrical povpwtey of the tong se [er ep eectrticd wm. tormng 2 chenged qrieers Plasma These obarapd tent ove than accelerate! +0 desived volmerty by erro! of voltage along the acceler, tube. Tt xe troued nto a narrate beam of hil vabocet tone ee ton curvverd yo of tha oveler of AmA Meaqnetic etd is so sch up tact only desired dopans turns thoougle gic rele Freud beam of dopant tot wv thon pasted Ahora Xiand ¥ plates Mechaniem almost iderhea) to scanning plates nm = catlade wou cccillescepe wluck move frauedl beam evet the s0ve0N. Perpendiculon distance doom semteenducloy currfaco covert | ley wmpunity ton befve coming 4 oett os called Poopcted Feng (Fe) Define Chemtcal Mlapouy Depnertion Chemucal vapouy deposrtroy (VD) wa prveen whew a solid maternal 4 deposrted dam a vapour by a chemical yeacbon occuaring of oy im ets of a nove, heated cubctat curacy. Solid meadewial uw obtained asa coacng 1 powder , ov w single omprteds Th a Ayprcol cup proce , substrate 4 expoced +> one. ov move volchle precerveod whudly rerck and decompo oy substraly arvfaco + pocduce the desired ast cod thus poreed, vwleble by pond exch ave also produced, which awe vemoved by gas lov Ahooeg by reachoy chambe, [20 stn CUD filme ave generally quite conformal } CMD filme ove hovdet than similar matemals produced | titeg.conveacbenad dabneabe proces | cub wu ted wm micwelectoonies indushy to make filmy sewing ay dielectrics, conduct, pareivahon byes, Rha bayries , and eprtantal fay SP apes We owt diagyars of Br—caos logue showw Qo input NAND Gade Yop Eaplain dhe Cx Poorest CRochwalekt Ovyrtel Goveoth paces ua method of omptal growth ued fo obtaw single onytad Sitter) ingots Cwptar Goocth 4 fhe pmcen where ~ pre exce Coste) becomes lager. as move molecoles ov tons acl w sherry pocih: t lat Lthee pecrhons 1m ovys ee chucks seed Electoonie grace stlieen ened |, ef Eas) vu placed wm quarta lo heachs coi] couetble fa hectng Due te heading , the silicon gh molten Furnace yu heated above 15OD'C Seed ome) dipped wm molten £3 and slesoly torttd vaton. by orylel publg mechantam Seed Orplal 2 furnag are otadted im qpporite divech ms Motten St sbckd +r seat onplel and elonb to solidly To ovecte doped opted depart added m moHen <4. Fecdbasks system corse! epecd of wHthdyars! and speed ot tab of omgptal puller. Ex plamw the Nas 4 eM0S fabrteabon preedurve- N08 dabricahm procedure Sco layev The proce slows with onde of S:— cubchate 1p which relshvely thick <0, layer - vy created on the cuvfdact The treld oxtde 4 selechvely etched — — to enpose the ciltean suv on ahi | oy cubcheade the Mos tanaistoy vill be crated Surface ¥ covered worth a thw , igh quality ude layer toluch will eventually from qe once af mos trancicty On op of thin onde, a ye of polysclecar u depoerted vndopad pelypstlicon hay rele velly vautv Bes ttvity of pelysiticen can be cadticad, by doping rt worth impunrty ato, header, te yu patterned and etched to form inteveonnecty and Mot tansichv qe ¢ Exbye silicon surdace 4 then doped sora bagh camer. caber of inpuyrbs, erther throughs ditfusey a tm implarctacbon - Sela 5 lis whee Caeecee pee ihe I ayia epae a S : e air so ge i at ee ee wel ee Pe Pes aw aren efficient lnipub diagram coy cmos YORE chow belro G) Y= @+ B40)! Yap Pees... ple Par “alr ¥ aC 8c 4 —— anv Gi) y = Beeec).p Vpp VY | Explain various stepe roalved ww Plurk sotlepraply Pett hore phy wn the ponces cf tranten gone te Shapes ona 'mmask to the surface of a iets worden True 0 wed nm micrrtaborescbon to potter pod on thaw tlw a the bull of cubetmte eo w Photolrthogia shy : C) thd Cleanin POSES San) coq Ey Or a aye and minte wrtly detonined voter) followed by ying rth oy A @) Poe—bake an} Pormev Coxbrg Pomuing th dove +o improve protorestet aclheston eae aap baking 4 done +> cemove moctuve acHer site (41) Photocvesut Covewing s- A sige bags of plutevesut gy -herned coveted ote cult making 29 den cuviact- . Qo) Sctt Bake sty ovdex to elinundte stluerc and quarantine uencformity the ceded cubchate 4 gerdty hedted at a0'o. fv one. monet | &) Mask aleqomert over the subshate, a photomasle worth fesred pcttern 4 adage ey Enposere ov light 4 aadected rough Veil orto photoresiict, eatestng & substance obange - a Development ‘) a cevelopev rkation, exposed pleotorrestat 1s vemovee!, Cue ovendeng the ptt ut) Hand Rabe Femamig photoes 4 mede mre ducable by performing a chee) Cheah step DA on Aen Bike i ke ¥ eer re tl IC) Etching 5 Oncevi subchbe regin ave ve) onthe — ertuchy q Fg ae as) Gt) Photosenct stapling: PecHean cubchete 1 left belind ates Beri phates Bw removed ()Restebve Load Inverter. vi Enhancement type nmos ach = “ dewver strancistev- 6E tad consists of simple Iinew verter bre oo thew Vin < Vig 1 dviver francis lyr Vact= Voy win actoff vari and does rot —| conduct any bey Vinee VoHage dorp acwt! Ye 4 =e0 hon Vout = Voo stat | pkew Vin vevenses furtien driver dansurtov will stewt enrductng m— xed curves ard ocduvah NMOS GY mn aay ote NG Be Leldg) sroveung Nhe furthe, dnvev sbansis evdey utr linear and ordput of driver dranuisty decreas : a. Ha (elherta)not] O) Exhancemerd Load NINOS applied +> th gets terminal Nes, Yoo | fe li 3 Vow tL I sei a (cachuevchon) Cien a Saduvated enhancement load inverter reputves cirolt oHlané supp ard simple deboreachon pavces ancl t Voy 6 lim to Nop Ve Lineay enhancement load imvertel cpevstes Im linain ov SD oq level Y epead 0 Voy - Linear load roveter has hagher “neue margin) co to coduveted enhantoment Fe Ve ie dasxipechon (xy Depletion Load -NNOS. Dep tection loael inverter equines ted more. deabortcation, dov channel nf +o adjust the tres held co of load. Og D. ss Load nimos invedev has shavp VTC tranecten, better noue margin , sin pocoov supply and cmallu Ovens r ov Pead tranectoy can be roe ether) m exdievateom Tego or nm new region rai a the bras wlagl [on toe m, But Imneav enhancement invettec repurves too ab pcer supply and betty eveuith cuffey from hagh pewres ln Ved ~ Ybs | Vaso 1 —o ji -—— 9 wi curteh, + | Gade and souve terminal t+ load one connected S Ves = 0. Thraheld wllege of lead u nepabve : wu aahetied fe Vgs,toad > “Tr, ted Tr coctuvection rep ion 5 Tojted = Eadied Vy oa Tr lneay cram, To, load = Kn,lood 2\riodlen. Z = orto] @) enos Tnvevter Nos and Pros dansict? tooye 0» dover, tenants when one U ON, otha 4 OFT Tnpit connected to gol feiminal of beth transite cud that both ah be den divectly woth imped w Hage Vw Sub, tbstrad of nmgos u tonnected 40 ground and floo tree) Vor linea cut-off. MW [Retixe OR and XNOE oneuits se tranemaciny Hy @) X0R ml oy N i >| + Ck +Lk -eod ° & ao oo | ° ° bey sa wm &) ww g Bnypane Trreancrnt-ssion) ade wrth Pas Transichy Sr te oh Et iS aa eS "| Prawo the crreut diegans andl coonespordorg sbek Aragprar dy nnos and canos invates ® nmos tnverters Bea. 1d] ph = Ve (#) cues wvettew Nad e a i Ahn Vouk Se 13y Destqn a D-FF oy Tranemtcctoy qe lopte ® Lt al at] a alae am LJKe Daeto the symbolic ym tor the eMos inveifer and wrrte the gneval engos loge qek Capek qudetirag? Khet wv the need tov tertability 2 larw des dv testabl 4 Lr We Desion toy Testability 4 — poccedure that o used 4 sch the dovelopment parce tov maximum effectreneD unden ether a resouvee - Umited w oeliabi Gy — driven scheme. Testabitity uy theard ether 40 reduce coct in ~ elre bitty driver proce and do +r tovease aeltabi Gly In A vesourre Umrted DET te VLSI design wnvalves incerpovehry addrhenal creut and design teacevey such 23 scam chains, built—ty—setf stat eweit, and ated sean cells utr chip Meseen te faulrtate ceshra Design ov Penebitr w WLS dos Y eXenbal +0 entux!| thet fabricated chsps ome tree trom any kind of manutacun: Ly Ht abo sede overall te time and iy cost of dering ard de buggt : By \nesy pevetng DET tedinigues into cbtp dasa, rt beeomes easier to test the struchival acweclnen of chip eal Ae Wiglat quality protic and dewer -tmeto- ee BNC, | lnte a shat Mos layer and symbolic, diagrem tanslabon tp math dam MOS Layew i Mos desgn 4 ama at during a specthaston into waaks Dy precessing siltcon ‘0 “meet the Spearheecbon (1) Substrate layer: Base lap wha Moc device Y bulb. Ft 4 ‘peng “Ane “~ of eben, Sewving a frundedon +o subseque eye @) Bode layer: Peal eX sep of cubshade hack as insulatev, om befrete form conduch . | s. whrg se reonlucty ul ra ayer @) \yetel lager - | | St consists of mefal conductor Wee aluminium ov exppev. | EY ured to wot uckewcomectrys betoeen ies components of re 0%) PolysiGcon * pe oe cledmele of Mos trancictov- stu cHten daped 0 cortad tts conduchvity, @) Nt and P+ these ave heamily oped Be. In cubctrade , Oveathny source and dvains of MOs tyancictew: n+ denotes cragions heowily doped woth electrons (n—type). whole p+ denctes ts heamly oped cot. eles (p-type) Symrbotic, Dieqrany ctranslahon to MASK -forry ther translechng A symbebo diegrars + Math form in Mos dabrathon, each \g pattey 4 drancPexted onto semiconductoy eubstyaty ust! photo lcthograp and aching pooner "0 "J Mask torn vetem +o phetrmas lo cher) 0) plot lebl 4o define tho patteur of each layr. 3 af , tnvolves dengn and dabmicch phobmasks acrres pond tp cach. tayo - these: photomasts one onerchaily etenY thet allow specrhe, uv) of cack layen ty be tranchened onto cube te Emplarw didtevent dos of pull-ups wel as load iw amos enhancement » RK Nicaea Beaten and ao a Spa and explain about diffewd . he eared components um Shek Diagram. Dyas He chek and faynd dev a two oped CMOS NAAD gat A shel diagrams ya diapamanhe re presentabon of * chip leqent thet helpe te abstact a enoeke! dev desi Stk diaqyan awe uted tt convey the layes mtormebon, eth the hefp eb ala cock Desa dacs = freehand ket of a ayn, cairy celeted Ging te ozpreient Hue vavtat potced lage cul. as ddfumom) metal and papntien + viheve -pelystBeon were detharm, tanticton one erect and whut ned wire goon dtHtuscen ov pelysiticon , trntadhs owe tomed Fer aA noe dings + Green color 4 ted tev o—didficsemn. * Ped tor petyabicon * Buu tor meet. * Yellow tn anplant # Black tor contact ove. CMOS NALD Gate ¢ ce s Dete by ae pullerte pull docom vebo of an NMos inverter a denver Aton me or move poss transictos Ve op oo ae Tov 4 mie zis Pla’ tv Sh STL... ef * Consider. twoey inverters scaled Hhowughe pos tancicteo, Lee a pout A ov, pornt® oo, port C Von Mey Waen, = tot 4 Assume (etion mode dransuctey tn eatuvahe and enhanwamat mod tranusty oo in nom —gediuvedt on Replace deplchion mode transect worth constant cuevverd cance And enhancemot mode drancicty wrth veaccty. Tavevtew—4 3 - Fo pull down tranciatr , < Wrd “sey = et (Oe Wa we" Hee Ugo = %e Ta, = sted (Wa- ve) a) = (Gao) us| as, Se, = _XPA hs S Ady &@ad =") Fe pull up transistw,

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