Elecronics Devices

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Course Code : ECT 201 CXDW/RW – 18 / 5025

Third Semester B. E. (Electronics and Communication Engineering)


Examination

ELECTRONIC DEVICES

Time : 3 Hours ] [ Max. Marks : 60

Instructions to Candidates :—
(1) All questions are compulsory.
(2) All questions carry marks as indicated against them.
(3) Assume suitable data and illustrate answers with neat sketches wherever necessary.

1. (a) The voltage across a Silicon diode (1N4007) at room temperature of 3000K
is 0.7 V when 2 mA of current flows through it. If the voltage increases
to 0.75 V, compute the diode current when the voltage equivalent of temperature
VT = 26 mV. 5 (CO 1)

(b) A Full wave rectifier has a center-tapped transformer 100-0-100 V. Each


one of the Diode is rated at Imax of 400 mA and Iavg of 150 mA.
Neglecting voltage drop across the Diodes and assuming RL = 440 Ω,
evaluate
(i) DC output voltage

(ii) DC load current and

(iii) PIV of each diode

(iv) Ripple Factor. Draw suitable circuit diagram. 5 (CO 1)

2. (a) For the circuit shown in Figure. 1, Compute the values of various currents
through the transistor. A Silicon transistor is having current gain β = 500
and VBE = 0.7 V. Evaluate VRL, VC and VRB shown in the figure.

CXDW/RW-18 / 5025 Contd.


Fig. on Next Page.....

5 (CO 1, 2)
(b) Describe the following : (CO 1, 2)
(i) BJT as a Switch 2
(ii) Need for Biasing the Transistor. 3

3. (a) Analyze Common Base transistor amplifier circuit at low frequency for Current
gain (AI), Input impedance (ZI) and Output admittance (YO). 5 (CO 3)
(b) A single-stage Common Emitter transistor amplifier circuit has Rs = 1 KΩ,
RC = 1 K Ω, RL = 4 K Ω. Transistor has hfe = 50, hoe = hre ≅ 0,
hie = 1 K Ω. Compute the values of Current gain AI, input impedance
ZI, Output impedance ZO, Voltage gain AV, And the Power gain for the
amplifier. 5 (CO 1)

4. (a) Draw the Structure diagram and input-output characteristics of N-channel JFET
device and explain the various current flow mechanisms. 5 (CO 3)

CXDW/RW-18 / 5025 2 Contd.


(b) (i) From the output characteristics of a FET device for a constant
V GS = 0 V, Drain current ID changes from 10 to 9.5 mA
for a change in drain voltage V DS from 2 to 12 V. Compute
the value of drain resistance r D. 1 (CO 1)
(ii) Explain Threshold voltage and Gate break down with reference
to MOSFET 2
(iii) Justify the reason for JFET to function as Voltage-Controlled
Current Source. 2

5. (a) Explain the operation of Silicon Controlled Rectifier with reference to its
equivalent circuit. Draw SCR characteristics and mention the inference from
characteristics. 5 (CO 1, 4)
(b) Explain with diagram the application of UJT device as an oscillator.
5 (CO 1, 4)

6. (a) Draw the Photo diode characteristics and mark the dark current region
and the current region due to light energy. Enlist the applications of the
device. 5 (CO 4)
(b) An amber coloured LED with a forward volt drop of 2 V is to be
connected to a 5 V stabilized DC power supply. Compute the value of
the series resistor required to limit the forward current to less than
10 mA. Also compute the current flowing through the diode if a 100 Ω
series resistor is used instead of previously calculated resistance. Draw the
circuit. 5 (CO 4)

CXDW/RW-18 / 5025 3 205

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