2011 Basic Electrical & Electronics Engineering - I: CS/B.Tech (NEW) /SEM-1/ES-101/2011-12

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Name : ……………………………………………………………
Roll No. : …………………………………………………………
Invigilator's Signature : ………………………………………..
CS/B.Tech (NEW)/SEM-1/ES-101/2011-12
2011
BASIC ELECTRICAL &
ELECTRONICS ENGINEERING – I
Time Allotted : 3 Hours Full Marks : 70
THIS QUESTION BOOKLET CONSISTS OF 2 PARTS —

PART I & PART II.
TO ANSWER THE QUESTIONS USE SEPARATE ANSWER
BOOKS FOR SEPARATE PARTS.
DO NOT ANSWER BOTH THE PARTS IN THE SAME
ANSWER-BOOK.
The figures in the margin ndicate full marks.

Candidates are required to give their answers in their own words
as far as practicable.
PART – I
( Marks : 35 )
GROUP – A
( Multiple Choice Type Questions )
1. Choose the correct alternatives for any five of the following :
5×1=5
i) The conductance G of a series R-L circuit having a
resistance R and inductive reactance X L is given by
1 R
a) G= b) G=
R XL
R R2
c) G= d) G= .
R2 + X 2L R2 + X 2L
1258 (N) [ Turn over
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ii) Inductive reactance of a coil of inductance 0·2 H at

50 Hz is
a) 62·8 Ω b) 628 Ω
c) 0·2 Ω d) 20 Ω.
iii) For a coil with N-turns, the self inductance will be
proportional to
1
a) N b)
N
1
c) N2 d) .
N2
iv) Area of hysteresis loop is a measure of
a) retentivity
b) coercivity
c) saturated flux density
d) energy loss.
v) The power factor of a purely inductive circuit is
a) zero b) one
c) infinity d) 0·5.
vi) The form factor of a current waveform is 1, its shape is
a) sinusoidal b) triangular
c) square d) sawtooth.
GROUP – B
( Short Answer Type Questions )
Answer any two of the following. 2 × 5 = 10
2. A network of resistances is formed as shown in Figure 1.
Comput the resistance between the points A and B.
Figure 1
1258 (N) 2
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3. Derive a mathematical expression for r.m.s. value of a

sinusoidal voltage v = Vm sin "t .
4. Two coils have self inductances L1 and L2 and mutual

inductance between them is M. Derive a mathematical
expression for co-efficient of coupling k for these coils.
5. Determine the value of R in Figure 2 such that 4 Ω resistor

consumes maximum power.
Figure 2
GROUP – C
( Long Answer Type Questions )
Answe any two of the following. 2 × 10 = 20
6. a) What is meant by the term “resonance” in a series

R L.C. circuit ? 3
b) A 20 Ω resistor, a choke coil having some inductance

and some resistance and a capacitor are connected in
series across a 25 V variable frequency source. When
frequency is 400 Hz, the current is maximum and its
value is 0·5 A and the potential difference across the
capacitor is 150 V. Calculate the resistance and the
inductance of the choke coil and the capacitance of the
capacitor. 7
1258 (N) 3 [ Turn over
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7. a) A flux of 0·0006 Wb is required in the air-gap of an iron

ring of cross-section 5 " 0 cm2 and mean length 2·7 m
with an air-gap of 4·5 mm. Determine the ampere turns
required. Six H values and corresponding B values are
noted from the magnetisation curve of iron and given
below. 6
H ( AT/m ) 200 400 500 600 800 1000
B ( Wb/m2 ) 0·4 0·8 1·0 1·09 1·17 1·19
b) A circuit receives 50 A current at a power factor of 0·8

lag from a 250 V, 50 Hz, 1-ph A.C. supp y. Calculate the
capacitance of the capacitor which is required to be
connected across the circuit to make the power factor
unity. 4
8. a) State and explain Thevenins theorem. 3
b) Find the Thevenin equivalent of the circuit of Figure 3

as shown at terminal XY. 7
Figure 3
9. a) Derive a mathematical expression for the average real

power delivered by a single phase a.c. source with an
e.m.f. of e = 2 E m sin "t when the source current is
i = 2 Im sin ("t # $) . 6
b) Define power factor of an a.c. circuit. State the major

disadvantages of poor power factor. 4
1258 (N) 4
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USE SEPARATE ANSWER-BOOK TO ANSWER PART-II

QUESTIONS.
PART – II
( Marks : 35 )
GROUP – A
( Multiple Choice Type Questions )
1. Choose the correct alternatives for any five of the following :
5×1=5
i) Fermi level of an n-type semiconductor l es
a) near the conduction band dge
b) near the valence band edge
c) at the middle of the band gap
d) none of these
ii) For an npn trans stor ICBO approximately doubles for
temperature ise of every
a) 5°C b) 7°C
c) 10 C d) none of these.
iii) If α of a BJT is 0·98, then the value of β is
a) 0·99 b) 99
c) 50 d) 49.
iv) The power rating of a BJT is determined by which of the
following ?
a) Collector base junction area
b) Base width
c) Heat sink
d) Emitter base junction area.
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v) It is easy to break the covalent bond by thermal energy

in case of
a) Carbon b) Germanium
c) Arsenic d) Silicon.
vi) The temperature coefficient of Zener breakdown voltage
is
a) positive
b) negative
c) zero
d) either positive or negative.
GROUP – B
( Short Answer Type Questions )
2. What do you mean by an intrinsic semiconductor ? Will it
behave as an insu ator at any temperature ? Explain. 2+3
3. Explain the mechanism of Zener breakdown in p-n junction
and write how it differs from avalanche breakdown. 3+2
4. What is meant by d.c. operating point or Q point in the
context of transistor characteristics ? What is load line ? Why
is transistor biasing necessary ? 2+1+2
5. Explain the principle of operation of a varactor diode.
Mention one application. 4+1
1258 (N) 6
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GROUP – C
( Long Answer Type Questions )
6. Consider an intrinsic silicon bar of cross-section 5 cm2 and

length 0·5 cm at room temperature 300K. An average field of
20 V/cm is applied across the ends of the silicon bar.
a) Calculate —
i) electron and hole component of current density
ii) total current in the bar
iii) resistivity of the bar. 6
b) If now donor impurity to the ext nt of 1 part in 108

atoms of Si is added, find the density of minority
carriers and the resistivity 4
Given :
Electron mobility = 1400 cm2 / V - s
Hole mobility = 450 cm2/V - s
Intr nsic carrier concentration of Si
At oom temperature ( 300K ) = 1" 5 #1010 / cm3
No. of Si atoms/ m3 = 4 " 99 #1028 .
7. a) Explain drift and diffusion of charge carrier in semi-

conductors. Derive the expression for electric current
due to drift and diffusion. 4+3
b) With the help of energy-band diagram, differentiate

among conductor, semi-conductor and insulator. 3
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8. a) What is ripple factor ? Evaluate the ripple factor and

efficiency of a full-wave bridge rectifier. 2+3
b) A silicon diode with internal resistance RF = 25 " is

used for half-wave rectification. The input a.c. voltage is
Vi = 20 sin "t and the load resistance is 500 Ω.
Find,
i) d.c. output voltage
ii) a.c. input power and
iii) efficiency of the rectifier. 2+2+1
9. a) Draw the circuit diagram for elf-biased configuration

considering an n-p-n transistor in CE configuration.
Derive the expression for its stability factors. 3+2
b) Calculate VCE and IC in the circuit below. Assume

VBE = 0 "7 V . 4
c) What is the voltage gain of a transmitter circuit in CC

configuration ? 1
1258 (N) 8

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www.makaut.

Time Allotted : 3 Hours Full Marks : 70

THIS QUESTION BOOKLET CONSISTS OF 2 PARTS —

The figures in the margin ndicate full marks.

1258 (N) [ Turn over

ii) Inductive reactance of a coil of inductance 0·2 H at

3. Derive a mathematical expression for r.m.s. value of a

4. Two coils have self inductances L1 and L2 and mutual

5. Determine the value of R in Figure 2 such that 4 Ω resistor

6. a) What is meant by the term “resonance” in a series

b) A 20 Ω resistor, a choke coil having some inductance

1258 (N) 3 [ Turn over

7. a) A flux of 0·0006 Wb is required in the air-gap of an iron

H ( AT/m ) 200 400 500 600 800 1000

B ( Wb/m2 ) 0·4 0·8 1·0 1·09 1·17 1·19

b) A circuit receives 50 A current at a power factor of 0·8

8. a) State and explain Thevenins theorem. 3

b) Find the Thevenin equivalent of the circuit of Figure 3

9. a) Derive a mathematical expression for the average real

b) Define power factor of an a.c. circuit. State the major

USE SEPARATE ANSWER-BOOK TO ANSWER PART-II

1258 (N) 5 [ Turn over

v) It is easy to break the covalent bond by thermal energy

2. What do you mean by an intrinsic semiconductor ? Will it

behave as an insu ator at any temperature ? Explain. 2+3

3. Explain the mechanism of Zener breakdown in p-n junction

and write how it differs from avalanche breakdown. 3+2

4. What is meant by d.c. operating point or Q point in the

context of transistor characteristics ? What is load line ? Why

is transistor biasing necessary ? 2+1+2

5. Explain the principle of operation of a varactor diode.

Mention one application. 4+1

6. Consider an intrinsic silicon bar of cross-section 5 cm2 and

i) electron and hole component of current density

ii) total current in the bar

iii) resistivity of the bar. 6

b) If now donor impurity to the ext nt of 1 part in 108

Electron mobility = 1400 cm2 / V - s

Hole mobility = 450 cm2/V - s

Intr nsic carrier concentration of Si

At oom temperature ( 300K ) = 1" 5 #1010 / cm3

No. of Si atoms/ m3 = 4 " 99 #1028 .

7. a) Explain drift and diffusion of charge carrier in semi-

b) With the help of energy-band diagram, differentiate

1258 (N) 7 [ Turn over

8. a) What is ripple factor ? Evaluate the ripple factor and

b) A silicon diode with internal resistance RF = 25 " is

i) d.c. output voltage

ii) a.c. input power and

iii) efficiency of the rectifier. 2+2+1

9. a) Draw the circuit diagram for elf-biased configuration

b) Calculate VCE and IC in the circuit below. Assume

c) What is the voltage gain of a transmitter circuit in CC

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