Z ibo Seno Electronic Engineering Co., Ltd.

S1WB05 - S1WB100
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability DIP
! High Surge Current Capability Dim Min Max
A B C
! Designed for Surface Mount Application A 6.20 6.50
! Plastic Material – UL Flammability 94V-O
B 6.80 8.40
D C 7.24 8.70




















































E
D 0.20 0.38
G
E 8.12 8.80
H
Mechanical Data K J G 2.15 3.40
L

Case: DIP , Molded Plastic M H 1.30 -
! Terminals: Plated Leads Solderable per J 3.80 4.90
MIL-STD-202, Method 208 K 0.90 1.40
! Polarity: As Marked on Case
L 0.45 0.58
! Weight: 0.22 grams (approx.)
M 5.00 5.20
! Mounting Position: Any
! Marking: Type Number All Dimensions in mm
! Lead Free: For RoHS / Lead Free Version

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

S1Z B S1Z B S1Z B S1Z B S1Z B S1Z B S1Z B Unit

Characteristic Symbol
05 10 20 40 60 80 100

Peak Repetitive Reverse Voltage VRRM

Working Peak Reverse Voltage VRWM 50 100 200 400 600 800 1000 V
DC Blocking Voltage VR

RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V

Average Rectified Output Current (Note 1) @TA = 40°C 1.0

IO A
Average Rectified Output Current (Note 2) @TA = 40°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load IFSM 50 A
(JEDEC Method)

I2t Rating for Fusing (t < 8.3ms) I2 t 5.0 A 2s

Forward Voltage per element @IF = 0.5A VFM 1.0 V

Peak Reverse Current @TA = 25°C 2.0

IRM µA
At Rated DC Blocking Voltage @TA = 125°C 500

Typical Junction Capacitance per leg (Note 3) Cj 13 pF

R
JA 70
Typical Thermal Resistance per leg (Note 1) °C/W
R
JL 20

Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C

Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.

2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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 Z ibo Seno Electronic Engineering Co., Ltd.

S1WB05 - S1WB100
1.0 10
60 Hz Resistive or

IF, INSTANTANEOUS FORWARD CURRENT (A)

Inductive load Tj = 25°C
I(AV), AVERAGE FORWARD CURRENT (A)

Pulse Width = 300µs

2% duty cycle

1.0

0.5

0.1

0 0.01
40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.4
1.2

TA, AMBIENT TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Output Current Derating Curve Fig. 2 Typ Forward Characteristics (per element)

60 100
IFSM , PEAK FORWARD SURGE CURRENT (A)

Single half-sine-Wave Tj = 25°c

(JEDEC M ethod) f = 1.0 Mhz
Vsig = 50 mV p-p
50
CJ, CAPACITANCE (pF)

40

30 10

20

10

0 1
1 10 100 1 10 100

NUM BER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)

Fig. 3 M ax Non-Repetitive Peak Forward Surge Current Fig. 4 Typ Junction Capacitance (per element)

100
IR, INSTANTANEOUS REVERSE CURRENT (µA)

Tj = 125°C

10

1.0

Tj = 25°C
0.1

0.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)

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