Semiconductor Diode Notes PDF

Semiconductor diode
LEARNING OBJECTIVES
• understand n-type and p-type materials

• understand the p-n junction
• appreciate forward and reverse bias of p-n junctions
• recognize the symbols used to represent diodes in circuit diagrams
• understand the importance of diode characteristics and maximum
ratings.
• know the characteristics and applications of various types
Types of materials
• Materials may be classified as conductors, semiconductors or
insulators. The classification depends on the value of resistivity of the
material. Good conductors are usually metals and have resistivity in
the order of 10−7 to 10−8 m, semiconductors have resistivity's in the
order of 10−3 to 3×103 m, and the resistivity of insulators are in the
order of 104 to 1014 m. Some typical approximate values at normal
room temperatures are:
What are N-type semiconductors materials?
• N-type semiconductors are formed by adding impurities that

introduce excess electrons into the crystal lattice. These impurities
are known as donor impurities. The most commonly used donor
impurity is phosphorus, which has an extra electron compared to the
host semiconductor material, such as silicon.
• This additional electron becomes a free electron in the crystal lattice,

contributing to the conductivity of the material. N-type
semiconductors are characterized by an abundance of free electrons,
which allow for efficient electron flow. The presence of these free
electrons makes N-type semiconductors highly conductive.
Functionality and Characteristics
•Diode Current Flow Functionality

• A standard diode necessitates a specific amount of forward
voltage to initiate the flow of current. Typically, this required
voltage is quite small, often around 0.6 volts. Until the diode
reaches this voltage threshold, current remains blocked. However,
once the forward voltage is attained, current effortlessly traverses
through the diode.
Properties and characteristics of N-type semiconductors
• N-type semiconductors have several unique properties and

characteristics that make them suitable for specific applications.
Firstly, their high conductivity makes them ideal for use in
electronic components that require efficient electron flow, such
as transistors and diodes.
• N-type semiconductors also exhibit a negative charge, as the
excess of electrons creates an overall negative charge in the
material. This negative charge is crucial for certain electronic
devices, as it enables the manipulation of electric current.
• Additionally, N-type semiconductors have a relatively low
resistance, allowing for the easy flow of electric current.
P-type semiconductors
• P-type semiconductors are formed by adding impurities that create
an excess of positively charged holes in the crystal lattice. These
impurities are known as acceptor impurities.
• The most commonly used acceptor impurity is boron, which has
one less electron compared to the host semiconductor material.
This missing electron creates a hole in the crystal lattice, which
acts as a positive charge carrier.
• P-type semiconductors are characterized by the presence of these
holes, which contribute to the conductivity of the material. However,
due to the absence of free electrons, P-type semiconductors have
lower conductivity compared to N-type.
Properties and characteristics of P-type
semiconductors
• P-type semiconductors possess unique properties and
characteristics that make them valuable in various electronic
applications.
• Firstly, their lower conductivity makes them suitable for devices that
require a controlled flow of electric current. P-type semiconductors
exhibit a positive charge, as the presence of holes creates an overall
positive charge in the material.
• This positive charge is crucial for specific electronic devices, as it
allows for the manipulation of electric current. Additionally, P-type
semiconductors have a relatively high resistance, which can be
advantageous in specific applications that require precise control
over the flow of electric current.
A p–n junction
• P-n junctions are formed by joining n-type and p-type semiconductor materials, as
shown below. Since the n-type region has a high electron concentration and the p-type a
high hole concentration, electrons diffuse from the n-type side to the p-type side.
Similarly, holes flow by diffusion from the p-type side to the n-type side. If the electrons
and holes were not charged, this diffusion process would continue until the
concentration of electrons and holes on the two sides were the same, as happens if two
gasses come into contact with each other. However, in a p-n junction, when the electrons
and holes move to the other side of the junction, they leave behind exposed charges on
dopant atom sites, which are fixed in the crystal lattice and are unable to move. On the
n-type side, positive ion cores are exposed. On the p-type side, negative ion cores are
exposed. An electric field E forms between the positive ion cores in the n-type material
and negative ion cores in the p-type material. This region is called the "depletion region"
since the electric field quickly sweeps free carriers out, hence the region is depleted of
free carriers. A "built-in" potential Vbi is formed at the junction due to E. The animation
below shows the formation of the E at the junction between n and p-type material.
•.
Semiconductor material
• The semiconductor material used in the PN junction diode is of

paramount importance because the material used affects many of
the major diode characteristics and properties. Silicon and
germanium are two widely used materials:
• Silicon: Silicon is the most widely used material as if offers high
levels of performance for most applications and it offers low
manufacturing costs. The technology for silicon is well established
and silicon diodes can be made cheaply. The forward turn on voltage
is around 0.6V, which is high for some applications, although for
Schottky diodes it is less.
• Germanium: Germanium is less widely used and but offers a low
turn on voltage of around 0.2 to 0.3 V.
Diode Characteristics
• Diodes have special features that make them useful in electronic circuits.
Knowing these features is important for using diodes correctly:
• Forward Voltage Drop : When a diode is forward-biased (i.e., the anode is at a
higher voltage than the cathode), it allows current to flow through it. However, a
diode requires a minimum voltage, known as the forward voltage drop, to start
conducting. This voltage drop typically ranges from 0.6 to 0.7 volts for silicon
diodes and around 0.2 volts for germanium diodes.
• Reverse Voltage : When a diode is reverse-biased (i.e., the cathode is at a
higher voltage than the anode), it acts as an insulator and prevents current from
flowing through it. However, if the reverse voltage exceeds a certain threshold,
known as the breakdown voltage, the diode will start conducting in the reverse
direction. This can lead to permanent damage to the diode if the current is not
limited.
• Current Rating : Diodes have a maximum current rating, which indicates the
maximum amount of current they can safely handle. Exceeding this current rating
can cause the diode to overheat and fail. It is important to select a diode with a
current rating that is suitable for the specific application to ensure its longevity
and reliability.
• Reverse Recovery Time : When a diode switches from forward-biased to
reverse-biased, there is a brief period during which it takes time to recover
and block current flow in the reverse direction. This is known as the reverse
recovery time. It is an important characteristic to consider, especially in
applications where the diode needs to switch rapidly or handle high-
frequency signals. A diode with a shorter reverse recovery time is preferred
in such cases.
• Temperature Dependence : Diode characteristics can be influenced by
temperature changes. The forward voltage drop of a diode typically
decreases with an increase in temperature, while the reverse current tends
to increase. It is important to consider the temperature range in which the
diode will be operating and select a diode that can withstand the expected
temperature variations.
• Capacitance : Diodes have a certain amount of capacitance associated with
them, known as junction capacitance. This capacitance can affect the
performance of high-frequency circuits by introducing unwanted signal
distortion. It is important to consider the capacitance of the diode and its
impact on the specific application.
Diode specifications ratings and
parameters
• Diode specifications ratings and parameters
• The specifications for diodes appear in data sheets and provide
a description of the performance of the particular device.
Inspecting the performance parameters will enable the diode to
be assessed for whether it will provide the required
performance for its intended function within an electronic circuit.
• Different specification parameters are more applicable for
diodes used in different applications, different electronic circuit
designs, etc. For power applications, aspects like the current
capability, forward voltage drop, junction temperature and the
like will be important, but for RF designs, the capacitance, and
turn on voltage will often be of great interest
• Problem . The forward characteristic of a diode is shown in figure, Use
the characteristic to determine (a) the current flowing in the diode
when a forward voltage of 0.4V is applied, (b) the voltage dropped
across the diode when a forward current of 9mAis flowing in it, (c) the
resistance of the diode when the forward voltage is 0.6V and (d)
whether the diode is a Ge or Si type.

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Semiconductor diode

• understand n-type and p-type materials

• N-type semiconductors are formed by adding impurities that

• This additional electron becomes a free electron in the crystal lattice,

•Diode Current Flow Functionality

• N-type semiconductors have several unique properties and

• The semiconductor material used in the PN junction diode is of

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